• Coupled systems mechanics
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• v.2 no.2
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• pp.147-157
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• 2013

We numerically investigate the electronic band structure of carbon nanotubes (CNTs) under radial corrugation. Hydrostatic pressure application to CNTs leads to a circumferential wave-like deformation of their initially circular cross-sections, called radial corrugations. Tight-binding calculation was performed to determine the band gap energy as a function of the amplitude of the radial corrugation. We found that the band gap increased with increasing radial corrugation amplitude; then, the gap started to decline at a critical amplitude and finally vanished. This non-monotonic gap variation indicated the metal-semiconductor-metal transition of CNTs with increasing corrugation amplitude. Our results provide a better insight into the structure-property relation of CNTs, thus advancing the CNT-based device development.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.445-449
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• 1996

Structural and optical characteristics in Se thin film fabricated by EBE method had been studied. Se thin film was deposited with noncrystalline until substrate temperature of >$100^{\circ}C$ Color of its surface had red genealogy, and its optical energy band gap was about 2.45 eV. But Se film was grown with monoclinic at substrate temperature of over >$150^{\circ}C$ Also, color of its surface had gray genealogy, and its optical energy band gap was about 2.31 eV. Finally, after heat-treatment at >$150^{\circ}C$ for 15 min with substrate temperature of >$100^{\circ}C$ noncrystalline Se was proved to be hexagonal, and color of its surface had dark gray genealogy, and its optical energy band gap was about 2.06 eV. From the results, it was known that Se thin film for photoelectric device with the lowest optical energy band gap was accepted from hexagonal structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.197-198
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• 2008

이 논문에서는 다양한 SiNx의 band gap을 이용하여 MIS 구조의 메모리 소자를 제작하고 이를 분석하였다. SiNx 박막은 증착 가스비에 따라 다양한 band gap을 가지게 된다. 본 실험에서는 $SiH_4$ 가스와 $NH_3$ 가스를 사용하여 SiNx 박막을 증착하였다. n-type 단결정 실리콘 기판위에 다양한 가스비에 따라 단일 SiNx 박막을 증착 및 분석하였고, 이를 이용하여 NNN 구조의 MIS 소자를 제작하였다. 제작된 소자는 4.6 V의 hysteresis roof 폭과 1000 초 후에 84.8 %의 retention 값을 갖는 우수한 메모리 특성을 보였다.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.324-329
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• 2015

First-principles investigations on the hybrid one dementional hexagonal hybrboron-nitride nano ribbons (BNNRs) with a armchair graphene nano-ribbons(AGRNRs), are presented. Electronics properties of the mixed armchair BNC nano-ribbon (BNCNRs) structure show control of a band gap on all cases at the special K-point. And we have studied, the band gap is direct in all cases. The band gap of mixed ABNCNRs could be divided into three groups (${\Delta}3p$, ${\Delta}3p+1$ and ${\Delta}3p+2$) and decrease with the increase of the width. Also these results show similar to the AGNRs case. Different from the band gap value ordering of AGNRs (${\Delta}3p+1$ > ${\Delta}3p$ > ${\Delta}3p+2$), the ordering of ABNCNRs is ${\Delta}3p$ > ${\Delta}3p+1$ > ${\Delta}3p+2$. The discrepancy may come from the differences between the edges of AGRNRs and the boundaries of hybrid BNCNRs. In addition, the bandgap of ABNCNRs are much smaller than those of the corresponding AGNRs. Our results show that the origin of band gap for BNCNRs with armchair shaped edges arises from both quantum confinement effect of the edges. These results similar to thecase of AGNRs. These properties of hybrid BN/C nano-ribbon structure may offer suitable bandgap to develop nnanoscale electronics and solar cell beyond individual GNRs and BNNRs.

• Journal of the Korean Ceramic Society
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• v.40 no.3
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• pp.213-218
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• 2003

Band gap energies of SrTiO$_3$(STO) thin film on glass substrates were studied in terms of annealing temperature. The STO thin film was fabricated by our newly developed method based on the combination of the Self-Assembled Monolayer(SAM) technique and the Liquid Phase Deposition(LPD) method. The as-deposited film demonstrated a direct band gap energy of about 3.65 eV, which further increased to 3.73 eV and 3.78 eV by annealing at 40$0^{\circ}C$ and 50$0^{\circ}C$, respectively. The band gap energy saturated at about 3.70 eV for the crystallized film which was obtained by annealing at 600-$700^{\circ}C$. The relatively large band gap energies of our crystallized films were due to the presence of minor amorphous phase, grain boundaries and oxygen vacancies generated by annealing in air.

• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.111-114
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• 2015

In this paper, we have proposed dual-band Phi-shaped slot gap filler antenna for satellite internet service applications. Some properties of the antenna such as return loss, radiation pattern, and gain have been simulated and measured. The proposed antenna has a Phi-shaped slot on the circular patch and is fabricated on the TLX-9 substrate. The radius of the circular patch is 25 mm, and it has a coaxial feeding structure. The dual-band Phi-shaped slot gap filler antenna has high-gain, small-size, simple-structure, and good radiation patterns at each band. The operating frequency band can be tuned by adjusting the length AL and FL of the Phi-shaped slot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.46-46
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• 2009

The photoconductive $AgGaSe_2$(AGS) layers were grown by the hot wall epitaxy method. The AGS layer was confirmed to be the epitaxially grown layer along the <112> direction onto the GaAs(100) substrate. The band-gap variation as a function of temperature on AGS was well fitted by $E_8(T)=1.9501-8.37{\times}10^{-4}T^2/(T+224)$. The band-gap energy of AGS obtained at 293 K was determined to be 1.8111 eV.

• Journal of Magnetics
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• v.11 no.3
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• pp.139-142
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• 2006

We fabricated new one-dimensional magnetophotonic crystal (1D-MPC) utilizing the second and third photonic band gaps where localized modes existed. Structure of the 1D-MPC was $(Ta_{2}O_{5}/SiO_{2})_{5}/Bi:YIG/(SiO_{2}/Ta_{2}O_{5})_{5}$ with optical thicknesses of 3$\lambda$ /4 for $Ta_{2}O_{5} and $SiO_2$ dielectric layers and $\lambda$ /2 for Bi:YIG defect layer, where $\lambda$ is a wavelength of a localized mode in the second photonic band gap. Faraday rotation at the localized mode in the second photonic band gap was enhanced, which was confirmed by calculation using 4${\times}$4 matrix method.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.72.1-72.1
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• 2010

Thin film a-Si solar cells deposited by PECVD have many advantages compared to the traditional crystalline Si solar cells. They do not require expensive Si wafer, the process temperature is relatively low, possibility of scaling up for mass production, etc. In order to produce thin film solar cells, understanding the relationship between the material characteristics and deposition conditions is important. It has been reported by many groups that the band gap of the a-Si material and the deposition rate has an linear relationship, when RF power is used to control both. However, when the process pressure is changed in order to control the deposition rate and the band gap, a diversion from the well known linear relationship occurs. Here, we explain this diversion by the deposition condition crossing different plasma regions in the Paschen curve with a simple model. This model will become a guide to which condition a-Si thin films must be fabricated in order to get a high quality film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.365-365
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• 2010

In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher $NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells.