• Title/Summary/Keyword: Band pass filter

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A Study on the Rx/Tx Switch Module with integrated Low Pass Filter (LPF가 집적화된 Rx/Tx 스위치 모듈에 관한 연구)

  • Song Jae-Sung;Min Bok-Ki;Jeong Soon-Jong;Kim In-Sung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.5
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    • pp.185-189
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    • 2005
  • This paper focuses on the design for Rx/Tx switch module of GSM(global standard mobile) band, characterization of a miniature, low power and dual-band implementation of the front-end switch module with low-pass filer And the effort to make agreement between the simulated design and the measured data for these solutions takes the place through accumulated design and manufacturing data library. We present the design, modeling and measurement of switch module integrating GSM Rx/Tx switching circuit and LPF(low pass filter) on a LTCC(low temperature co-fired ceramic) substrate. For GSM application, insertion and return loss of the low pass filter designed was less than 0.3 dB which was less than 12.7 dB at 900 MHz. The LTCC switch module contained 10 embedded passives and 3 surface mount components integrated on 4.6$\times$4.8$\times$1.2 mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module measured at 900 MHz was 11 dB. In both of the design approach yielded excellent agreement between measured and simulated results.

A Design of 20 MHz CMOS Continuous Time Low-Pass Filter Using Linear Transconductors (선형 트랜스컨덕터를 이용한 20 MHz CMOS 연속시간 저역-통과 여파기의 설계)

  • 박희종;박상렬;김동용;차형우;정원섭
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.357-360
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    • 1999
  • A 20 MHz CMOS continuous low-pass filter using simulated floating inductor consisted of two fully-differential transconductors and a capacitor is presented. The theory of operation is described and simulation results show close agreement between predicted behaviour and experimential performance. Simulation results show that the filter has ripple bandwidth of 22 MHz, pass-band ripple of 0.36 ㏈. and cutoff frequency of 26 MHz at supplay voltage of $\pm$3 V. The power dissipation is 19.2 ㎽.

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Design of Multilayer Ceramic Chip Band pas Filter with an attenuation pole (감쇠극을 갖는 적층형 세라믹 칩 필터의 설계)

  • 강종윤;심성훈;최지원;박용욱;윤석진;김현재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.123-126
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    • 2002
  • A proposed multi-layer ceramic (MLC) chip type band-pass filter (BPF) is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coulped stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The passband and attenuation pole depend the coupling between resonators and coupling capacitance. The frequency characterics of the passband and attenuation pole are analysed with the variance of the coupling between resonators and coupling capacitance. An equivalent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the BPF is well acceptable for IMT-2000 application.

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Fabrication and CO2-sensing Characteristics of Optical Band-Pass Filter for 4.3 CO2 Wavelength (4.3 μm 파장 Optical Band-Pass Filter의 제작과 CO2 감도 특성)

  • Lee, Sang-Hoon;Kim, Soo-Hyun;Kim, Kwang-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.2
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    • pp.210-215
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    • 2002
  • Optical Band-pass Filter(BPF) for the selected wavelength of 4300 nm was designed and fabricated on Si wager by alternately depositing Ge and $SiO_2$ thin layers by an electron beam evaporation technique. The fabricated BPF showed the optical transmittance characteristics of 58.2% with FWHM(Full Width at Half Maximum) of 204 nm at 4300 nm, but showed the transmittance less than 5% due to the reflectance over all the wavelength ranges except 4300 nm band. The $CO_2$ sensitivity of BPF was investigated with the transmittance as a function of $CO_2$ gas concentration using a sensing cell attached to FT-IR instrument. The transmittance of BPF was almost linearly decreased with increasing of $CO_2$ concentration in the range of from 500 to 5000 ppm. The sensing structure using double BPFs showed higher slop of transmittance vs $CO_2$ concentration, and thus higher gas sensitivity than that using a single BPF, even though the former had relatively lower transmittance.

Design and Fabrication of a LTCC Diplexer for GSM/CDMA Applications (GSM/CDMA 대역용 LTCC Diplexer설계 및 제작)

  • Kim, Tae-Wan;Lee, Young-Chul
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.7
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    • pp.1267-1271
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    • 2009
  • In this paper, a diplexer circuit to separate GSM from CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed using 3-dimensional (3-D) multi-layer compact inductor and capacitors in e-layer LTCC substrate with a relative dielectric constant of 7. In order to achieve high selectivity of the bands, a shunt capacitor and inductor are designed in the high-pass filter (HPF) and low-pass filter (LPF), respectively. The size of the fabricated diplexer including CPW pads is 3,450 ${\times}$4,000 ${\times}$694 ${\mu}m^3$An insertion loss (IL) and return loss in GSM band are less than -1.35dB and more than -5.66dB,respectively. In the case of CDMA band, the IL of -1.54dBandRLof above -9.30dBare archived.

Characteristics of High Efficiency Wideband Microstrip Band Pass Filter (고효율 광대역 마이크로스트립 대역통과필터 특성)

  • Lee, Young-Hun
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.13 no.4
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    • pp.636-644
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    • 2009
  • This paper presents a compact, low insertion loss, sharp rejection and wide band microstrip band pass filter that is composed rectangular loop resonator and step-impedance-open-stub(SIOS) for wireless data communication. The SIOS can be reduce length about 30% more than general $0.25{\lambda}$ stub. And the stub can the advantage of tuning impedance magnitude. In order to demonstrate agrement of this paper prove, the optimized wide band pass filters are realized and experimented. A transmission line model used to calculate the frequency response of the new filters shows good agreement with measurements. The filter has 3dB fractional bandwith of 52.5%(3.267GHz), an insertion loss of better than 0.33dB from 4.587GHz to 7.854GHz, and two rejection of greater than 30dB within 221MHz$(4.366GHz{\sim}4.587GHz)$ at low frequency band, 181MHz$(7.854GHz{\sim}8.035GHz)$ at high frequency band. Maximum rejection characteristics of the filter are -54dB at low frequency and -60dB at high frequency.

Design of Dual-Band Power Amplifier for the RFID Frequency-Band (RFID 대역에서 동작하는 이중 대역 전력증폭기 설계)

  • Kim, Jae-Hyun;Hwang, Sun-Gook;Park, Hyo-Dal
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.3
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    • pp.376-379
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    • 2014
  • In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.

Fabrication of Microstrip Band-Pass Filter using HTS Thin Film (고온초전도 박막을 이용한 마이크로스트립 대역통과 필터의 제작)

  • 허원일;정동철;김민기;임성훈;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.389-392
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    • 1996
  • The recent development of high temperature superconducting epitaxial thin film offer great potential for planar passive microwave application such as ring resonator, filters, transmission lines, and antennas. This paper describes the fundamental properties of Microstrip Band-Pass Filter using HTS Thin Film and its application to microwave devices. In order to fabricate HTS microstrip multiple filters, We have grown laser ablated HTS thin films, patterned by photolithographic process and wet etching processes intro HTS microwave devices.

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A design of single side-band filter for millimeter wave using martin-puplett interferometer (Martin-puplett 간섭계를 이용한 밀리미터파 대역의 단측파대 여파기 설계)

  • 한석태;김효령;이창훈;박종애;정현수;김광동;김태성;박동철
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.4
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    • pp.98-105
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    • 1996
  • The design method of 85 GHz-115 GHz band single side-band filter using the principle of martin-puplett inteferometer is described. It has been designed by this method and also manufactured and tested. From the test results, not only the ratio of image singal rejection of 19 dB is obtained, but also the theoretical and experimental results of center frequency of pass-band and rejection-band show the validity of the theory. This manufactured filter was installed on 100GHz band SiS (superconductor insulator superconductor ) receiver for observing cosmic radio waves and tested. We found that this filter can be used a single side-band as well as double side-band mode. The design method which is presented in this paper can be used a single side-band filter for a heterodyne type sub-milimeter wave receiver.

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