• Title/Summary/Keyword: Band pass

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Design and Experiment of Waveguide Limiter with Band-Pass Characteristics Using PIN Diode (PIN 다이오드를 이용한 대역 통과 여파 특성을 갖는 리미터 설계 및 실험)

  • Park, Jun-Seo;Kim, Byung-Mun;Cho, Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.9
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    • pp.1065-1072
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    • 2012
  • In this paper, the method of design of the waveguide band-pass filter and limiter in radar system is proposed. First, we design a self-resonant iris, which can behave as a band-pass filter by mounting the PIN diode on the iris. When low power microwave is incident on the proposed element, the element behaves as a band-pass filter. Under a high power microwave condition, however, the element behaves as a limiter having wide band stop characteristics. The fabricated element has a pass band with -0.7 dB insertion loss at 10 GHz under the low power condition and isolation about 25 dB under the high power condition.

Fabrication of high-temperature superconducting low-pass filter for broad-band harmonic rejection (광대역 고조파 제거를 위한 고온초전도 저역통과필터의 제작)

  • Han, Seok-Gil;Kang, Gwang-Yong;Ahn, Dal;Suh, Jun-Seok;Choi, Chun-Geun;Kim, Sang-Hyeon;Kwak, Min-Hwan
    • 한국초전도학회:학술대회논문집
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    • v.10
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    • pp.193-196
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    • 2000
  • A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band. The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method has a cutoff frequency of 0.9 CHz with a 0.01 dB ripple level. The coupled line type low-pass filter with strip line configuration was fabricated by using a high-temperature superconducting (HTS : YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on MgO(100) substrate. Since the HTS coupled tine type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 6.2 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency.

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Ultra-Wideband Band-Pass Filter with Notched Band at 5.8GHz using the LC Resonators and DGS (LC공진기와 DGS구조를 이용한 5.8GHz에서 저지대역을 갖는 소형 초광대역 대역통과 여파기)

  • Jung, Seung-Back;Yand, Seung-In
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.47 no.8
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    • pp.68-73
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    • 2010
  • In this paper, a compact Ultra-Wideband band-pass filter with notched band at 5.8GHz by using LC resonator is proposed. The structure of the proposed band-pass filter is very simple, and the DGS(Defected Ground Structure) is used to get the low-pass filter characteristics and the LC resonator is used to get the notched filter. The proposed band-pass filter can be much smaller than a cascaded filter type. The LC resonator is designed with a radial stub and small stub. As a result of measurement, the insertion loss is less than 0.5dB throughout the pass-band of 2.21GHz~10.92GHz, the return loss is more than 16dB and the maximum variation of group delay is 0.29ns and a notched band is 5.2GHz~6.2GHz.

A Design of Tunable Band Pass Filter using Varactor Diode (버렉터 다이오드를 이용한 가변 대역통과여파기 설계)

  • Ha, Jung-Hyen;Shin, Eun-Young;Kang, Min-Woo;Gwon, Chil-Hyeun;Park, Byung-Hoon;Lim, Jong-Sik;Choi, Heung-Taek;Ahn, Dal
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.6
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    • pp.1196-1200
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    • 2009
  • This paper proposed a tunable band pass filter. It is two-poles direct capacitive coupled resonator band pass filter which the capacitors of parallel resonators are changed by varactor diodes. The DC bias controls to change the value of capacitance in the parallel resonator for tunning the pass band. To validate the proposed design method, we fabricated the band pass filter which has tunable center frequency from 200MHz to 245MHz.

A Study on the Design and Characteristics of thin-film L-C Band Pass Filter

  • Kim In-Sung;Song Jae-Sung;Min Bok-Ki;Lee Won-Jae;Muller Alexandru
    • KIEE International Transactions on Electrophysics and Applications
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    • v.5C no.4
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    • pp.176-179
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    • 2005
  • The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

Design and Fabrication of SiO2/TiO2 Multi Layer Thin Films on Silicon Encapsulation of LED Deposited by E-beam Evaporation for NIR Narrow Band Pass Filter Application (NIR 협대역 투과 필터 응용을 위한 LED 실리콘 봉지재 위에 직접 E-beam으로 증착 된 SiO2/TiO2 다층 박막 설계 및 제작)

  • Kim, Dong Pyo;Kim, Kyung-Seob;Kim, Goo-Cheol;Jeong, Jung-Chae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.2
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    • pp.165-171
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    • 2022
  • The SiO2/TiO2 multilayer thin films used for narrow band pass filter were fabricated using E-beam evaporation method. The narrow band pass filter was used to enhance the resolution of spectroscopy and sensor applications with near infrared (NIR) light source. The narrow band pass filter with multilayer thin films were designed with Essential Macleod program. The multilayers of SiO2/TiO2 with 32 layers were deposited on the silicon encapsulation of IR with peak wavelength (λp) of 660 nm and NIR LEDs with λp of 830 nm, 880 nm, and 955 nm. After NIR light passed through the narrow band pass filter, the full width of half maximum of 33.4~48.6 nm became narrow to 20~24 nm owing to the absorption of photons with short or long wavelength of designed band of 20 nm. The SiO2/TiO2 band pass filter fabricated in this study can be used for sensor, optoelectronics, and NIR spectroscopy applications.

A Study on The Design of Planer Comb-Line Bandpass Filter Using Equivalent Circuits of Asymmetrical Coupled Line (비대칭 결합선로 등가회로를 사용한 Comb-line 구조의 대역통과 여파기 설계)

  • Yun, Jae-Ho;Park, Jun-Seok;Kim, Hyeong-Seok
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.8
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    • pp.368-374
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    • 2002
  • In this paper, we introduce a procedure to obtain a equivalent circuit of comb-line band pass filter. By employing equivalent circuits of each asymmetrical coupled line. we composed the full equivalent circuit of comb-line bandpass filter and derived simple design equations for extracting each line's impedance. To show the validity of design equations, we simulated and fabricated a planar type comb-line bandpass filter, which has center frequency 1.8㎓, band-width 50㎒ and four resonators. The resulting filter is very compact, have broad stop band with the second pass band centered at four times the center frequency of the first pass band. The experimental results show exact performances of design specification.

A Design of CPW Band-Pass Filter with Rejection Band for Ultra-Wideband System (저지 대역을 갖는 UWB용 CPW 대역 통과 여파기의 설계)

  • No, Jin-Won;Hwang, Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.7
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    • pp.704-709
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    • 2007
  • In this paper, a CPW band-pass filter with a rejection band is proposed for UWB(Ultra-Wideband) communication systems. The proposed filter has a band-pass characteristic of wide-band by inserting only a slot in $50{\Omega}$ transmission line. To obtain the band-rejection function at WLAN frequency band($5.15{\sim}5.725GHz$), the designed filter is combined with folded slot resonators on the ground plane of the CPW structure. The fabricated CPW band-pass filter shows a compact size of $15.35{\times}13.60mm$, a wide passband of 2.8 GHz to 9.8 GHz and the narrow stop-band of 5.15 GHz to 5.71 GHz for 3-dB bandwidth. Also, the measured group delay is less than 400 psec throughout the operation frequency band except the rejection band.

A Realization of High-pass, Band-stop and All-pass Transfer Functions with OTA-C Integrator Loop Structure

  • Tsukutani, Takao;Higashimura, Masami;Kinugasa, Yasutomo;Sumi, Yasuaki;Fukui, Yutaka
    • Proceedings of the IEEK Conference
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    • 2002.07a
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    • pp.642-645
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    • 2002
  • This paper introduces a way to realize high-pass, band-stop and all-pass transfer functions using Operational Transconductance Amplifiers (OTAs) and grounded capacitors. The basic circuit configuration is constructed with five OTAs and two grounded capacitors. In the circuit with the proportional block, it is shown that the circuit parameters can be independently set and electronically tuned by the transconductance gains. Although the circuit configuration has been Down, it seems that the feature for realizing the high-pass, the band-pass and the all-pass transfer functions makes the structure more attractive and useful. An example is given together with simulated results by PSPICE.

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A Study on the Design and Fabrication of the UWB Bandpass Filter (초광대역 대역통과여파기의 설계와 제작에 관한 연구)

  • Goog, Jung-Hyoung;Choi, Byoung-Ha;Kim, Gyu-Cheol;Park, Jung-Ryul;Ham, Min-Su
    • Journal of Advanced Navigation Technology
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    • v.13 no.1
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    • pp.41-47
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    • 2009
  • In this paper, a band pass filter with a rejection band is proposed for UWB(Ultra Wide Band) communication system. First, low pass filter accessed cut off frequency of 10.2 GHz was designed using structure stepped impedance. And high pass filter accessed cut of frequency of 3.2 GHz was designed using parallel short-stub. There was implemented composite connection of designed low pass filter and high pass filter. The relative dielectric constant, the height, the loss tangent of the PCB substrate were ${\varepsilon}_r$=2.2, h=0.508 mm and loss tangent = 0.0009 respectively. The fabricated band pass filter shows a compact size of 3 cm. The fabricated band pass filter was characterized using 37169A VNA(Vector Network Analyzer). And measured result were obtained 7.5 GHz of bandwidth and -10 dB of return loss and -3 dB of insertion loss from pass band. The result of the research can be used for the UWB communications and MIC/MMIC, RFIC system.

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