• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.357-360
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• 1999

A 20 MHz CMOS continuous low-pass filter using simulated floating inductor consisted of two fully-differential transconductors and a capacitor is presented. The theory of operation is described and simulation results show close agreement between predicted behaviour and experimential performance. Simulation results show that the filter has ripple bandwidth of 22 MHz, pass-band ripple of 0.36 ㏈. and cutoff frequency of 26 MHz at supplay voltage of $\pm$3 V. The power dissipation is 19.2 ㎽.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.123-126
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• 2002

A proposed multi-layer ceramic (MLC) chip type band-pass filter (BPF) is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coulped stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The passband and attenuation pole depend the coupling between resonators and coupling capacitance. The frequency characterics of the passband and attenuation pole are analysed with the variance of the coupling between resonators and coupling capacitance. An equivalent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the BPF is well acceptable for IMT-2000 application.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.210-215
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• 2002

Optical Band-pass Filter(BPF) for the selected wavelength of 4300 nm was designed and fabricated on Si wager by alternately depositing Ge and $SiO_2$ thin layers by an electron beam evaporation technique. The fabricated BPF showed the optical transmittance characteristics of 58.2% with FWHM(Full Width at Half Maximum) of 204 nm at 4300 nm, but showed the transmittance less than 5% due to the reflectance over all the wavelength ranges except 4300 nm band. The $CO_2$ sensitivity of BPF was investigated with the transmittance as a function of $CO_2$ gas concentration using a sensing cell attached to FT-IR instrument. The transmittance of BPF was almost linearly decreased with increasing of $CO_2$ concentration in the range of from 500 to 5000 ppm. The sensing structure using double BPFs showed higher slop of transmittance vs $CO_2$ concentration, and thus higher gas sensitivity than that using a single BPF, even though the former had relatively lower transmittance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1267-1271
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• 2009

In this paper, a diplexer circuit to separate GSM from CDMA band is designed using a LTCC (Low Temperature Cofired Ceramic) multi-layer technology. In order to increase a integration capability of the diplexer, it is designed using 3-dimensional (3-D) multi-layer compact inductor and capacitors in e-layer LTCC substrate with a relative dielectric constant of 7. In order to achieve high selectivity of the bands, a shunt capacitor and inductor are designed in the high-pass filter (HPF) and low-pass filter (LPF), respectively. The size of the fabricated diplexer including CPW pads is 3,450 ${\times}$4,000 ${\times}$694 ${\mu}m^3$An insertion loss (IL) and return loss in GSM band are less than -1.35dB and more than -5.66dB,respectively. In the case of CDMA band, the IL of -1.54dBandRLof above -9.30dBare archived.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.636-644
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• 2009

This paper presents a compact, low insertion loss, sharp rejection and wide band microstrip band pass filter that is composed rectangular loop resonator and step-impedance-open-stub(SIOS) for wireless data communication. The SIOS can be reduce length about 30% more than general $0.25{\lambda}$ stub. And the stub can the advantage of tuning impedance magnitude. In order to demonstrate agrement of this paper prove, the optimized wide band pass filters are realized and experimented. A transmission line model used to calculate the frequency response of the new filters shows good agreement with measurements. The filter has 3dB fractional bandwith of 52.5%(3.267GHz), an insertion loss of better than 0.33dB from 4.587GHz to 7.854GHz, and two rejection of greater than 30dB within 221MHz$(4.366GHz{\sim}4.587GHz)$ at low frequency band, 181MHz$(7.854GHz{\sim}8.035GHz)$ at high frequency band. Maximum rejection characteristics of the filter are -54dB at low frequency and -60dB at high frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.376-379
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• 2014

In this paper, we designed more improving a dual-band power amplifier than the transceiver of RFID reader that operates at 910 MHz and 2.45 GHz. A dual-band power amplifier has two circuits. One matching circuit is composed lumped element in the band of 910 MHz. The other matching circuit using distributed element in the high band of 2.45 GHz. So, this dual-band power amplifier works as Band Rejection Filter in the band of 910 MHz but in the high band of 2.45 GHz works as Band Pass Filter. Therefore, this is composed a microstrip transmission line. A power amplifier is showed gains of 8 dB output power at 910 MHz and 1.5 dB output power at 2.45 GHz. If input power is 10 dBm, both of bands output 20 dBm.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2804-2806
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• 1999

This paper presents a voltage regulator for an AC power supply. It is designed to have the band Pass filter characteristic for the system to be free from DC-offset or sub-frequency fluctuation in the output voltage wave

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.389-392
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• 1996

The recent development of high temperature superconducting epitaxial thin film offer great potential for planar passive microwave application such as ring resonator, filters, transmission lines, and antennas. This paper describes the fundamental properties of Microstrip Band-Pass Filter using HTS Thin Film and its application to microwave devices. In order to fabricate HTS microstrip multiple filters, We have grown laser ablated HTS thin films, patterned by photolithographic process and wet etching processes intro HTS microwave devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.98-105
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• 1996

The design method of 85 GHz-115 GHz band single side-band filter using the principle of martin-puplett inteferometer is described. It has been designed by this method and also manufactured and tested. From the test results, not only the ratio of image singal rejection of 19 dB is obtained, but also the theoretical and experimental results of center frequency of pass-band and rejection-band show the validity of the theory. This manufactured filter was installed on 100GHz band SiS (superconductor insulator superconductor ) receiver for observing cosmic radio waves and tested. We found that this filter can be used a single side-band as well as double side-band mode. The design method which is presented in this paper can be used a single side-band filter for a heterodyne type sub-milimeter wave receiver.

• Journal of the Korean Institute of Telematics and Electronics
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• v.4 no.1
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• pp.13-21
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• 1967

A low pass filter is synthesized with R, C and negative impedance converters(NIC). The filter has a 4-th order elliptic function, which gives best magnitude approximation with equi-ripple characteristics both in pass and stop band. And experimental investigations have been made on the effect of the anticipated deviation of the NIC conversion factor and of possible loaded operation. Through the study, it has been cocluded that: 1. For minimum pole-zero sensitivity with respect to the NIC conversion factor, the network of a parallel RC-NIC configuration is preferable and the Horowitz polynomial decomposition method is applied in the synthesis procedure. 2. A few percentage variation of the NIC conversion factor changes the frequency and amplitude characteristics of the filter by nearly negligible amount. 3. With a load resistance below the critical value, the filter turns into an oscillator.