• 제목/요약/키워드: Balanced Mixer

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Ka-band용 Double Balanced MMIC Mixer의 설계 및 제작 (Design of Double Balanced MMIC Mixer for Ka-band)

  • 류근관
    • 한국정보통신학회논문지
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    • 제8권2호
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    • pp.227-231
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    • 2004
  • 본 논문에서는 TRW사의 InGaAs/GaAs p-HEMT 공정의 쇼트키 다이오드를 이용하여 Ka대역용 하향수신변환기에 이용할 수 있는 MMIC(Monolithic Microwave Integrated Circuit) 주파수 혼합기를 설계 및 제작하였다. RF는 30.6∼31.0 ㎓이고 LO 9.8 ㎓를 이용하여 IF 20.8∼21.2 ㎓를 얻을 수 있는 본 MMIC 주파수 혼합기는 발룬의 크기를 줄이기 위해 LO와 IF 단자를 서로 바꾸어 설계함으로써 전체 회로의 크기를 줄일 수 있었다. 제작된 MMIC 주파수 혼합기의 크기는 3000umx1500um이며 on-wafer 측정 결과 대역 내에서 7.8㏈ 이하의 변환손실을 얻었다. 또한 27㏈ 이상의 LO-RF 격리도, 19㏈ 이상의 LO-IF 격리도 및 39㏈ 이상의 RF-IF 격리도를 각각 얻었다.

높은 격리도 특성의 W-밴드용 MIMIC 단일 평형 주파수 혼합기의 설계 및 제작 연구 (A Study on Design and Fabrication of High Isolation W-band MIMIC Single-balanced Mixer)

  • 이상용;이문교;안단;이복형;임병옥;이진구
    • 대한전자공학회논문지TC
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    • 제44권11호
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    • pp.48-53
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    • 2007
  • 본 논문에서는 branch line coupler와 ${\lambda}/4$ 전송라인을 이용한 94 GHz 발룬 회로를 설계하였고, 이를 이용하여 높은 LO-RF 격리도 특성을 갖는 W-밴드용 MIMIC 단일 평형 주파수 혼합기를 개발하였다. 혼합기는 $0.1\;{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT 다이오드를 적용하였다. 혼합기에 사용된 MHEMT는 전류이득차단 주파수가 154 GHz, 최대공진 주파수 특성이 454 GHz의 특성을 나타내었다. 제작된 혼합기의 특성 측정 결과 LO 입력 전력이 8.6 dBm일 때 12.8 dB의 변환 손실 특성을 나타내었으며, 입력 및 출력 P1 dB는 각각 5 dBm, -8.9 dBm의 특성을 나타내었다. 또한 LO-RF 격리도 특성은 94 GHz에서 37.2 dB로 높은 격리도 특성을 나타내었다. 격리도 특성을 고려할 때, 본 논문에서 설계 및 제작된 W-밴드용 MIMIC 단일 평형 주파수 혼합기는 기존의 밀리미터파 대역 혼합기와 비교하여 높은 LO-RF 격리도 특성을 나타내었다.

A 3~5 GHz UWB Up-Mixer Block Using 0.18-μm CMOS Technology

  • Kim, Chang-Wan
    • Journal of electromagnetic engineering and science
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    • 제8권3호
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    • pp.91-95
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    • 2008
  • This paper presents a direct-conversion I/Q up-mixer block, which supports $3{\sim}5$ GHz ultra-wideband(UWB) applications. It consists of a VI converter, a double-balanced mixer, a RF amplifier, and a differential-to-single signal converter. To achieve wideband characteristics over $3{\sim}5$ GHz frequency range, the double-balanced mixer adopts a shunt-peaking load. The proposed RF amplifier can suppress unwanted common-mode input signals with high linearity. The proposed direct-conversion I/Q up-mixer block is implemented using $0.18-{\mu}m$ CMOS technology. The measured results for three channels show a power gain of $-2{\sim}-9$ dB with a gain flatness of 1dB, a maximum output power level of $-7{\sim}-14.5$ dBm, and a output return loss of more than - 8.8 dB. The current consumption of the fabricated chip is 25.2 mA from a 1.8 V power supply.

The comparison of the CMOS Double-Balanced Mixer for WLAN applications

  • 한대훈;김복기
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.531-532
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    • 2008
  • In this paper, we present the comparison of the CMOS Double-Balanced Mixer for WLAN applications using the tail current source and not using it at the same current. The mixers are derived from the Gilbert cell mixer and have been simulated by using TSMC $0.18{\mu}m$ RF CMOS technology.

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MIC Magic-Tee에 의한 X-Band Balanced Mixer (X-Band Balanced Mixer by MIC Magic-Tee)

  • 강영채
    • 한국통신학회논문지
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    • 제7권2호
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    • pp.71-77
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    • 1982
  • 本論文은 X-Band마이크로波周波數領域에서 MIC平面magic tee를 利用하여 平衡mixer를 구현하는 方法을 提示한다. 이 magic-tee는 일찍이 Ronde에 의하여 마이크로스트립과 슬로트線路로서 실현할 수 있음이 提示되었으며 또한 이 magic-tee가 rat-race나 hybridring보다 좋은 特性을 가지고 있음이 確認되었다. 本硏究에서는 3rd order(E-arm)와 2nd order(H-arm)의 Chebyshev整合回路를 設計한 MIC magic-tee와 2개의 對稱特性을 갖는 Schottkey barrier 다이오우드로 平衡mixer를 製作한 結果 VSWR<1.2 및 conversion loss=6dB 程度의 廣帶域mixer가 됨을 確認하였다.

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2.45GHz 대역 RFID Reader 에 적용 가능한 능동형 발룬 설계 (An Active Balun Design for Application to RFID Reader at 2.45GHz)

  • 정효빈;임태서;이달호;김형석
    • 한국정보통신설비학회:학술대회논문집
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    • 한국정보통신설비학회 2007년도 학술대회
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    • pp.423-426
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    • 2007
  • An active Balun is designed for RFID reader at 2.45GHz. The Balun is integrated inside the receiver, then the LNA and mixer can be connected. The unbalanced LNA output signal is transformed to a balanced signal at the input mixer The RF mixer and LO mixer, by using this balun. The Balun provided a balanced signal with two output stage, gain mismatch is 0.116dB. The phase show a good behavior with $163.918^{\circ}$,$-16.609^{\circ}$. The phase mismatch is about $0.527^{\circ}$. The tight difference between the gain and phase on each brancd, is because of the used capacitor and integrated inductor and the other parasitic element inside the balun.

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Low Spurious Image Rejection Mixer for K-band Applications

  • Lee, Moon-Que;Ryu, Keun-Kwan;Kim, Hyeong-Seok
    • KIEE International Transactions on Electrophysics and Applications
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    • 제4C권6호
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    • pp.272-275
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    • 2004
  • A balanced single side-band (SSB) mixer employing a sub-harmonic configuration is designed for up and down conversions in K-band. The designed mixer uses anti-parallel diode (APD) pairs to effectively eliminate even harmonics of the local oscillator (LO) spurious signal. To reduce the odd harmonics of LO at the RF port, we employ a balanced configuration for LO. The fabricated chip shows 12$\pm$2dB of conversion loss and image-rejection ratio of about 20dB for down conversion at RF frequencies of 24-27.5GHz. As an up-conversion mode, the designed chip shows 12dB of conversion loss and image-rejection ratio of 20 ~ 25 dB at RF frequencies of 25 to 27GHz. The odd harmonics of the LO are measured below -37dBc.

Single-balanced Direct Conversion Quadrature Receiver with Self-oscillating LMV

  • Nam-Jin Oh
    • International Journal of Internet, Broadcasting and Communication
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    • 제15권3호
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    • pp.122-128
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    • 2023
  • This paper proposes two kinds of single-balanced direct conversion quadrature receivers using selfoscillating LMVs in which the voltage-controlled oscillator (VCO) itself operates as a mixer while generating an oscillation. The two LMVs are complementary coupled and series coupled to generate the quadrature oscillating signals, respectively. Using a 65 nm CMOS technology, the proposed quadrature receivers are designed and simulated. Oscillating at around 2.4 GHz frequency, the complementary coupled quadrature receiver achieves the phase noise of -28 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The other series coupled receiver achieves the phase noise of -31 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The simulated voltage conversion gain of the two single-balanced receivers is 37 dB and 45 dB, respectively. The double-sideband noise figure of the two receivers is 5.3 dB at 1 MHz offset. The quadrature receivers consume about 440 μW dc power from a 1.0-V supply.

PCS 용 MMIC Single-blanced upconverting 주파수 혼합기 설계 및 제작 (A GaAs MMIC Single-Balanced Upconverting Mixer With Built-in Active Balun for PCS Applications)

  • 강현일;이원상;정기웅;오재응
    • 전자공학회논문지D
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    • 제35D권4호
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    • pp.1-8
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    • 1998
  • An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

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새로운 발룬 회로를 이용한 2 GHz 대역 이중 평형 Star 혼합기의 설계 및 제작 (Design and Fabrication of 2 GHz Double Balanced Star Mixer Using a Novel Balun)

  • 김선숙
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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    • pp.630-637
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    • 2003
  • In this paper, a DBM(double balanced mixer) of 2 GHz is implemented on FR4(h=1.6mm, ${\epsilon}_r=4.6$) substrate. The structure of double balanced mixer requires, in general, two talons and a quad diode. For balun, a novel planar balun using microstrip to CPS(Coplanar Strip) is suggested and designed. The suggested balun shows the phase imbalance of $180^{\circ}{\pm}1.5^{\circ}$ and the amplitude imbalance of ${\pm}0.2 dB$ for 1.5 to 2.5 GHz. Using the balun, DBM is successfully implemented, and the measured conversion loss of up/down converter show about 6 dB over the bandwidth. The balun may be applicable for MMIC(Monolithic Microwave Integrated Circuit) DBM with the process supporting backside via though more study.

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