• Title/Summary/Keyword: Bake

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A Study on Poly-Si TFT characteristics with string structure for 3D SONOS NAND Flash Memory Cell (3차원 SONOS 낸드 플래쉬 메모리 셀 적용을 위한 String 형태의 폴리실리콘 박막형 트랜지스터의 특성 연구)

  • Choi, Chae-Hyoung;Choi, Deuk-Sung;Jeong, Seung-Hyun
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.7-11
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    • 2017
  • In this paper, we have studied the characteristics of NAND Flash memory in SONOS Poly-Si Thin Film Transistor (Poly-Si TFT) device. Source/drain junctions(S/D) of cells were not implanted and selective transistors were located in the end of cells. We found the optimum conditions of process by means of the estimation for the doping concentration of channel and source/drain of selective transistor. As the doping concentration was increased, the channel current was increased and the characteristic of erase was improved. It was believed that the improvement of erase characteristic was probably due to the higher channel potential induced by GIDL current at the abrupt junction. In the condition of process optimum, program windows of threshold voltages were about 2.5V after writing and erasing. In addition, it was obtained that the swing value of poly Si TFT and the reliability by bake were enhanced by increasing process temperature of tunnel oxide.

Study on the Characteristics of Formaldehyde Emission from Wood-Based Panels Treated with Several Surface Finishing Materials (표면마감처리에 따른 목질보드의 포름알데히드 방산특성에 관한 연구)

  • So, Won-Tek;Lim, Jin-Ah
    • Journal of the Korean Wood Science and Technology
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    • v.34 no.3
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    • pp.30-37
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    • 2006
  • The present study examined the formaldehyde (HCOH) emission characteristic of various wood-based panel used in interior design, and measured changes in formaldehyde emission when a number of VOC reduction methods were applied. Formaldehyde emission showed a clear tendency of increase with the rise of temperature, and the concentration of formaldehyde emitted changed according to the preprocessing condition before measuring. Formaldehyde emission from wood board after bake out treatment was lower than that of the control group. When specimens were coated with urethane, cashew, water, oil stain, they generally showed the decrease of formaldehyde emission, although varying according to finishing material, and when edge sealing was applied the decrease became significant. $TiO_2$ coating was more effective in decreasing formaldehyde under ultraviolet lamps than under ordinary lamps. When the irradiation of ultraviolet lamps gets longer, formaldehyde emission decreased.

Hermetic Characteristics of Negative PR (Negative PR의 기밀 특성)

  • Choi, Eui-Jung;Sun, Yong-Bin
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.2 s.15
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    • pp.33-36
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    • 2006
  • Many issues arose to use the Pb-free solder as adhesive materials in MEMS ICs and packaging. Then this study for easy and simple sealing method using adhesive materials was carried out to maintain hermetic characteristic in MEMS Package. In this study, Hermetic characteristic using negative PR (XP SU-8 3050 NO-2) as adhesive at the interface of Si test coupon/glass substrate and Si test coupon/LTCC substrate was examined. For experiment, the dispenser pressure was 4 MPa and the $200\;{\mu}m{\Phi}$ syringe nozzle was used. 3.0 mm/sec as speed of dispensing and 0.13 mm as the gap between Si test coupon and nozzle was selected to machine condition. 1 min at $65^{\circ}C$ and 15 min at $95^{\circ}C$ as Soft bake, $200\;mj/cm^2$ expose in 365 nm wavelength as UV expose, 1 min at $65^{\circ}C$ and 6 min at $95^{\circ}C$ as Post expose bake, 60 min at $150^{\circ}C$ as hard bake were selected to activation condition of negative PR. Hermetic sealing was achieved at the Si test coupon/ glass substrate and Si test coupon/LTCC substrate. The leak rate of Si test coupon/glass substrate was $5.9{\times}10^{-8}mbar-l/sec$, and there was no effect by adhesive method. The leak rate of Si test coupon/LTCC substrate was $4.9{\times}10^{-8}mbar-l/sec$, and there was no effect by dispensing cycle. Better leak rate value could be achieved to use modified substrate which prevent PR flow, to increase UV expose energy and to use system that controls gap automatically with vision.

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Study on 40 nm Electron Beam Patterning by Optimization of Digitizing Method and Post Exposure Bake (전자선 석판 기술에서 디지타이징과 노광후굽기 최적화를 통한 40 nm 급 패턴 제작에 관한 연구)

  • Han, Sang-Yeon;Shin, Hyung-Cheol;Lee, Kwy-Ro
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.10
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    • pp.23-30
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    • 1999
  • We experimented on the sub 50nm patterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, firstly, we reduced the PR thickness to 100nm, and the field size to 200 ${um}m$. Then PEB (Post Expose Bake) time/temperature, which is one of the very important factors when SAL601 is used, were reduced for minimum line width. In addition, digitizing is optimized for better results. Quantum wire and quantum dot which can be used for nanoscale memory device, such as single electron memory device, are fabricated using these developed lithography techniques.

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Gas desorption species and quantity from the hot cathode ionization gauges (열음극 전리 진공게이지의 기체이탈 특성)

  • ;;;I. Arakawa
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.201-206
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    • 2003
  • A residual gas analyzer was used to study the outgassing behavior of stainless steel 304 chamber as a function of bake-out temperature up to $235 ^{\circ}C$ and to identify the gas species evolved during turn on and degassing of the three different types of hot cathode ionization gauges. It was found that $H_2O$, CO, and $H_2O$ were the dominent outgassing species in the vacuum chamber during bake-out but finally $H_2$ and CO(mass 28) persisted at room temperature. Dominant outgassing species were also $H_2$ and $H_2O$ while fuming on the ionizations and then $H_2$,$H_2O$ and CO were found to be the main species degassed gauges. It was appeared that the outgassing species and quantity were not agreed to the three different types of hot cathode ionization gauges.

Study of the New Structure of Inter-Poly Dielectric Film of Flash EEPROM (Flash EEPROM의 Inter-Poly Dielectric 막의 새로운 구조에 관한 연구)

  • Shin, Bong-Jo;Park, Keun-Hyung
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.10
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    • pp.9-16
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    • 1999
  • When the conventional IPD (inter-poly-dielctrics) layer with ONO(oxide-nitride-oxide) structure was used in the Flash EEPROM cell, its data retention characteristics were significanfly degraded because the top oxide of the ONO layer was etched off due to the cleaning process used in the gate oxidation process for the peripheral MOSFETs. When the IPD layer with the ONON(oxide-nitride-oxide-nitride) was used there, however, its data retention characteristics were much improved because the top nitride of the ONON layer protected the top oxide from being etched in the cleaning process. For the modelling of the data retention characteristics of the Flash EEPROM cell with the ONON IPD layer, the decrease of the threshold voltage cue to the charge loss during the bake was here given by the empirical relation ${\Delta}V_t\; = \;{\beta}t^me^{-ea/kT}$ and the values of the ${\beta}$=184.7, m=0.224, Ea=0.31 eV were obtained with the experimental measurements. The activation energy of 0.31eV implies that the decrease of the threshold voltage by the back was dur to the movement of the trapped electrons inside the inter-oxide nitride layer. On the other hand, the results of the computer simulation using the model were found to be well consistent with the results of the electrical measurements when the thermal budget of the bake was not high. However, the latter was larger then the former in the case of the high thermal budger, This seems to be due to the leakage current generated by the extraction of the electrons with the bake which were injected into the inter-oxide niride later and were trapped there during the programming, and played the role to prevent the leakage current. To prevent the generation of the leakage current, it is required that the inter-oxide nitride layer and the top oxide layer be made as thin and as thick as possible, respectively.

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이탈리아 빵 고수 '마시모'의 빵 사랑

  • Korean Bakers Association
    • 베이커리
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    • no.8 s.445
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    • pp.80-81
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    • 2005
  • 마시모 프레도(Massimmo Freddo)쉐프는 이탈리아의 세계적인 제빵재료업체 '베이크마크(Bake Mark)사'의 기술팀장을 맡고 있다. 그는 정통 이탈리아 빵에 현대의 기술력을 덧입혀 세계에 전파하는 소위 이탈리아 빵의 민간 외교관이다. 자타가 공인하는 이탈리아 빵의 고수 '마시모 프레도'가 전하는 이탈리아 빵의 모든 것.

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