• Title/Summary/Keyword: Backscattering

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Acoustical backscattering characteristic depending on the changes in the body of sandfish (Arctoscopus japonicus) (도루묵의 체내 변화에 따른 음향산란특성)

  • YOON, Eun-A;LEE, Kyounghoon;HWANG, Kangseok;LEE, Hyungbeen;HAN, Inwoo;HWANG, Doo-Jin
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.52 no.1
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    • pp.36-41
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    • 2016
  • Changes in target strength (TS) values of sandfish when sandfish was alive and dead were investigated using ex-situ at 120 kHz. TS values measured by tilt angles with -50~+50 degrees showed ranges from -71.0 to -53.3 dB for live sandfish, -63.1~-46.3 dB for thawed sandfish, and -70.0~-50.4 dB after 24 hours from thawed, respectively. It was shown that while TS values were similar between the case of live and the case of after 24 hours from thawed, mean TS values were higher by approximately 5 dB in the case of immediate thawed sandfish. It was also seen that TS values were similar between the case of thawed sandfish and the case of after 21 hours from live. The results showed that TS values of live sandfish were different from those of frozen sandfish. It implies that when estimating TS of frozen fish, the influx of bubbles and changes of body should be considered.

MOCVD Deposition of AlN Thin Film for Packaging Materials

  • Chang-Kyu, Ahna;Seung-Chul Choi;Seong-Hoon Cho;Sung-Hwan Han;Je-Hong Kyoung
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2000.04a
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    • pp.118-118
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    • 2000
  • New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to $900^{\circ}C$. The new precursor was p purified by a sublimation technique and help to fabricate high purity film. It s showed high vapor pressure, which is able to a critieal factor for the high purity a and atmospheric CVD of AlN. High Quality AIN thin film was obtained at $700-900^{\circ}C$. The AIN film was characterized by RBS

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Preparation of Mg(OH)2 Dispersion and its Application to PET Non-woven Textile as Flame Retardant Coating (수산화마그네슘 분산상의 제조와 PET 부직포 섬유의 난연 코팅제 적용)

  • Lim, Hyung-Mi;Hyun, Mi-Kyung;Jeong, Sang-Ok;Lee, Dong-Jin;Lee, Seung-Ho
    • Journal of the Korean Ceramic Society
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    • v.48 no.6
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    • pp.537-542
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    • 2011
  • Magnesium hydroxide as a non-halogen flame retardant has increasing attention due to its non-toxicity, high decomposition temperature and smoke suppressant ability during combustion. For the application of magnesium hydroxide retardant to the textile by soaking and coating method, the prerequisite for the coating is a small particle size, stable dispersion, and adhesion to the textile. The dispersion of $Mg(OH)_2$ particles and stability of the coating was checked by monitoring the change of transmittance and backscattering by varying the types of dispersion agents, binder, solvent, and $Mg(OH)_2$ source, and their compositions in the coating. The $Mg(OH)_2$ dispersion coating was applied to PET(poly(ethylene terephthalate)) non-woven textile. The physical properties are characterized by surface morphology, amount of coating, particle dispersion, and adhesion test. The flame retardant $Mg(OH)_2$ coated textile has been compared by limited oxygen index(LOI) and thermal gravimetry and differential scanning calorimetry(TG-DSC). It was found that phosphorous additive may give synergistic effect on $Mg(OH)_2$ flame retardant coating to make the flame retardant PET non-woven textile.

Monitoring of Climate Change of Northeast Asia and Background Atmosphere in Korea

  • Oh, Sung-Nam;Chung, Hyo-Sang;Choi, Jae-Cheon;Bang, So-Young;Hyun, Myung-Suk
    • Proceedings of the Korean Environmental Sciences Society Conference
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    • 2003.11a
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    • pp.232-235
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    • 2003
  • In general, the parameters of climate change include aerosol chemical compounds, aerosol optical depth, greenhouse gases(carbon dioxide, CFCs, methane, nitrous oxide, tropospheric ozone), ozone distribution, precipitation acidity and chemical compounds, persistent organic pollutants and heavy metals, radioactivity, solar radiation including ultra-violet and standard meteorological parameters. Over the last ten years, the monitoring activities of Korea regarding to the climate change have been progressed within the WMO GAW and ACE-Asia IOP programs centered at the observation sites of Anmyeon and Jeju Gosan islands respectively. The Greenhouse gases were pointed out that standard air quality monitoring techniques are required to enhance data comparability and that data presentation formats need to be harmonized and easily understood. Especially, the impact of atmospheric aerosols on climate depends on their optical properties, which, in turn, are a function of aerosol size distribution and the spectral reflective indices. Aerosol optical depth and single scattering albedo in the visible are used as the two basic parameters in the atmospheric temperature variation studies. The former parameter is an indicator of the attenuation power of aerosols, while the latter represents the relative strength of scattering and absorption by aerosols. For aerosols with weak absorption, surface temperature decreases as the optical depth increases because of the domination of backscattering. For aerosols with strong absorption, however, warming could occur as the optical depth increases. The objective of the study is to characterize the means, variability, and trends of Greenhouse gases and aerosol properties on a regional basis using data from its baseline observatories in Korea peninsula. A further goal is to understand the factors that control radiative forcing of the greenhouse and aerosol.

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Influence of Annealing Temperature on Structural and Thermoelectrical Properties of Bismuth-Telluride-Selenide Ternary Compound Thin Film

  • Kim, Youngmoon;Choi, Hyejin;Kim, Taehyeon;Cho, Mann-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.304.2-304.2
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    • 2014
  • Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

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Comparison of Passivation Property on Hydrogenated Silicon Nitrides whose Antireflection Properties are Identical (반사방지 특성을 통일시킨 실리콘 질화막 간의 패시베이션 특성 비교)

  • Kim, Jae Eun;Lee, Kyung Dong;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Korean Journal of Materials Research
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    • v.26 no.1
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    • pp.47-53
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    • 2016
  • Silicon nitride ($SiN_x:H$) films made by plasma enhanced chemical vapor deposition (PECVD) are generally used as antireflection layers and passivation layers on solar cells. In this study, we investigated the properties of silicon nitride ($SiN_x:H$) films made by PECVD. The passivation properties of $SiN_x:H$ are focused on by making the antireflection properties identical. To make equivalent optical properties of silicon nitride films, the refractive index and thickness of the films are fixed at 2.0 and 90 nm, respectively. This limit makes it easier to evaluate silicon nitride film as a passivation layer in realistic application situations. Next, the effects of the mixture ratio of the process gases with silane ($SiH_4$) and ammonia ($NH_3$) on the passivation qualities of silicon nitride film are evaluated. The absorption coefficient of each film was evaluated by spectrometric ellipsometry, the minority carrier lifetimes were evaluated by quasi-steady-state photo-conductance (QSSPC) measurement. The optical properties were obtained using a UV-visible spectrophotometer. The interface properties were determined by capacitance-voltage (C-V) measurement and the film components were identified by Fourier transform infrared spectroscopy (FT-IR) and Rutherford backscattering spectroscopy detection (RBS) - elastic recoil detection (ERD). In hydrogen passivation, gas ratios of 1:1 and 1:3 show the best surface passivation property among the samples.

RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the fabrication of SiGe HBT (SiGe HBT 제작을 위한 실리콘 게르마늄 단결정 박막의 RBS 분석)

  • 한태현;안호명;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.9
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    • pp.916-923
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    • 2004
  • In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

MO-COMPOUNDS AS A DIFFUSION BARRIER BETWEEN Cu AND Si

  • Kim, Ji-Hyung;Lee, Yong-Hyuk;Kwon, Yong-Sung;Yeom, Geun-Young;Song, Jong-Han
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.683-690
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    • 1996
  • In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

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Simulation and Evaluation of Sea Surface Observations Using a Microwave Doppler Radar (시뮬레이션을 이용한 마이크로웨이브 도플러 레이더 해면관측법의 평가)

  • Yoshida, Takero;Rheem, Chang-Kyu
    • Journal of the Korean Society for Marine Environment & Energy
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    • v.18 no.2
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    • pp.116-122
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    • 2015
  • A simulation is applied to evaluate sea surface observations such as wave heights and surface currents by using a microwave Doppler radar. It is reported that the microwave irradiation width on the sea surface and Fourier transform time taken to sample data for frequency analysis affect Doppler spectra. To investigate the influences by these parameters, Doppler spectra are simulated with various numerical sea surface waves with currents. From the results, in the case of the microwave irradiation width is five times smaller than the wavelength of the sea surface wave, and the Fourier transform time is also five times shorter than the period of the sea surface wave, there is a possibility to measure wave heights accurately with a Doppler radar. In addition, relative surface currents can be estimated by analysis of long Fourier transform time. The simulation results showed the appropriate observing conditions with a microwave Doppler radar.

Estimation of Moon Jellyfish Aurelia coerulea Using Hydroacoustic Methods off the Coast of Tongyeong, Korea (통영 인근해역에서 음향기법을 이용한 보름달물해파리(Aurelia coerulea)의 밀도 추정)

  • Shin, Hyung-Ho;Han, Inwoo;Oh, Wooseok;Chae, Jinho;Yoon, Euna;Lee, Kyounghoon
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.52 no.6
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    • pp.725-734
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    • 2019
  • Moon jellyfish Aurelia coerulea are highly abundant off the coast of Tongyeong, Korea. We measured the density of A. coerulea in this area using a scientific echosounder at frequencies of 38 and 120 kHz, and then applied a distorted wave Born approximation (DWBA) model to calculate the target strength of the echosounder at each frequency. Then, we used the frequency difference method to extract jellyfish echo signals and estimate the A. coerulea density. A. coerulea was evenly distributed throughout the water column; the backscattering strength ranged from -75 to -65 dB. In May and August, the A. coerulea densities at survey lines 3 and 4 were estimated at 1.5-1.6 and 0.2-0.9 g/m2, with mean weighted densities of 1.04 and 0.48 g/m2, respectively. In September, the A. coerulea densities estimates in Jaran Bay and Goseong Bay were 0.6-2.1 and 0.1-0.4 g/m2, with mean weighted densities of 1.25 and 0.24 g/m2, respectively.