• 제목/요약/키워드: Back scattering

검색결과 168건 처리시간 0.021초

Numerical Analysis of Back Scattering from a Target over a Random Rough Surface Using DRTM

  • Yoon, Kwang-Yeol
    • Journal of electromagnetic engineering and science
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    • 제10권2호
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    • pp.61-66
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    • 2010
  • This paper is concerned with an analysis of the back scattering of electromagnetic waves from a target moving along random rough surfaces such as the desert, and sea. First, the discrete ray tracing method(DRTM) is introduced, and then, this method is applied to the back scattering problem in order to investigate the effect of the back scattering from random rough surfaces on the electric field intensities. Finally, numerical examples of various height deviations of the Gaussian type of rough surfaces are shown. It is numerically demonstrated that the back scattering is dominated by the diffractions related to the reflections from the random rough surfaces.

회전 표적의 고주파수 후방산란단면적 해석 (High-frequency Back-scattering Cross Section Analysis of Rotating Targets)

  • 김국현;조대승;김진형
    • 한국군사과학기술학회지
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    • 제10권3호
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    • pp.16-24
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    • 2007
  • The high-frequency analysis method of back-scattering cross section spectrum of rotating targets is established. The time history of the back-scattering cross section is calculated using a quasi-stationary approach, based on a physical optics and a physical theory of diffraction, combining an adaptive triangular beam method to consider the shadow effect. And the spectra of back-scattering cross section by the Doppler effect are analyzed applying a simple fast Fourier transform method to its time history. The numerical calculation for rotating targets, such as rotating metal plates and underwater propeller, are carried out. The time history appears to be periodic with respect to the number of wings. The backscattering cross section spectrum level and its frequency shift are dependent on the rotating speed, direction, and the shape of the targets.

중간 광전극에 삽입된 산란층에 의한 염료감응 태양전지의 광수집 성능 향상 (Enhancement of the Light Harvesting of Dye-sensitized Solar Cell by Inserting Scattering Layer)

  • 남정규;김범성;이재성
    • 한국분말재료학회지
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    • 제16권5호
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    • pp.305-309
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    • 2009
  • The effect of light scattering layers (400 nm, TiO$_2$ particle) of 4 $\mu$m thickness on the dye-sensitized solar cell has been investigated with a 12 $\mu$m thickness of photo-anode (20 nm, TiO$_2$ particle). Two different structures of scattering layers (separated and back) were applied to investigate the light transmitting behaviors and solar cell properties. The light transmittance and cell efficiency significantly improved with inserting scattering layers. The back scattering layer structure had more effective transmitting behavior, but separated scattering layer (center: 2 $\mu$m, back: 2 $\mu$m) structure (9.83% of efficiency) showing higher efficiency (0.6%), short circuit current density (0.26 mA/cm$^2$) and fill factor (0.02). The inserting separating two scattering layers improved the light harvesting, and relatively thin back scattering layer (2 $\mu$m of thickness) minimized interruption of ion diffusion in liquid electrolyte.

"압축성 plasma내의 sheath로 쌓인 원주형 도체에 의한 파의 분산" (Scattering by a perfectly conducting circular cylinder with a sheath immersed in a compressible plasma)

  • Oh, Myung
    • 대한전자공학회논문지
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    • 제14권3호
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    • pp.1-5
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    • 1977
  • 압축성 plasma내에서 sheath로 둘러쌓인 원주형도체에 의한 전자파의 산란에 관하여 해석적인 방법으로 조사하였다. 전자파가 입사하는 경우에 대하여 total scattering cross section과 back scattering cross section을 구하였으며 computer로 계산한 수치결과를 graph로 제시하였다.

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Nano-Scale CMOSFET에서 Contact Etch Stop Layer의 Mechanical Film Stress에 대한 소자특성 분석 (Investigation of Device Characteristics on the Mechanical Film Stress of Contact Etch Stop Layer in Nano-Scale CMOSFET)

  • 나민기;한인식;최원호;권혁민;지희환;박성형;이가원;이희덕
    • 대한전자공학회논문지SD
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    • 제45권4호
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    • pp.57-63
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    • 2008
  • 본 논문에서는 Contact Etch Stop Layer (CESL)인 nitride film의 mechanical stress에 의해 인가되는 channel stress가 소자 특성에 미치는 영향에 대해 분석하였다. 잘 알려진 바와 같이 NMOS는 tensile stress와 PMOS에서는 compressive stress가 인가되었을 경우 drain current가 증가하였으며 그 원인을 체계적으로 분석하였다. NMOS의 경우 tensile stress가 인가됨으로써 back scattering ratio ($\tau_{sat}$)의 감소와 thermal injection velocity ($V_{inj}$)의 증가로 인해 mobility가 개선됨을 확인하였다. 또한 $\tau_{sat}$, 의 감소는 온도에 따른 mobility의 감소율이 작고, 그에 따른 mean free path ($\lambda_O$)의 감소율이 작기 때문인 것으로 확인되었다. 한편 PMOS의 compressive stress 경우에는 tensile stress에 비해 온도에 따른 mobility의 감소율이 크기 때문에 channel back scattering 현상은 심해지지만 source에서의 $V_{inj}$가 큰 폭으로 증가함으로써 mobility가 개선됨을 확인 할 수 있었다. 따라서 CES-Layer에 의해 인가된 channel stress에 따른 소자 특성의 변화는 inversion layer에서의 channel back scattering 현상과 source에서의 thermal injection velocity에 매우 의존함을 알 수 있다.

Analysis of Electromagnetic Wave Scattering from a Sea Surface Using a Monte-Carlo FDTD Technique

  • Choi Dong-Muk;Kim Che-Young;Kim Dong-Il;Jeon Joong-Sung
    • Journal of electromagnetic engineering and science
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    • 제5권2호
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    • pp.87-91
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    • 2005
  • This paper presents a Monte-Carlo FDTD technique to determine the scattered field from a perfectly conducting surface like a sea surface, from which the useful information on the incoherent pattern tendency could be observed. A one-dimensional sea surface used to analysis scattering was generated using the Pierson-Moskowitz model. In order to verify the numerical results by this technique, these results are compared with those of the small perturbation method, which show a good match between them. To investigate the incoherent pattern tendency involved, the dependence of the back scattering coefficients on the different wind speed(U) is discussed for the back scattering case.

SOI MOSFET의 단채널 효과를 고려한 문턱전압과 I-V특성 연구 (A Study on Threshold Voltage and I-V Characteristics by considering the Short-Channel Effect of SOI MOSFET)

  • 김현철;나준호;김철성
    • 전자공학회논문지A
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    • 제31A권8호
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    • pp.34-45
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    • 1994
  • We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

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2000년 7월 한국 동남연안 SAR 영상의 낮은 후방산란 해역에 대한 고찰 (Study of Low Back-scattering Area on the SAR Image of Waters off the Southeast Coast of Korea)

  • 김태림;박종집;김상우
    • 대한원격탐사학회지
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    • 제26권2호
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    • pp.109-114
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    • 2010
  • 2000년 7월 5일 한국 동남연안을 촬영한 SAR 영상에서 해안을 따라 나타난 낮은 후방산란 해역의 원인을 고찰 하였다. 이 해역은 여름철에 자주 표층 냉수가 관측되는 해역으로 인접한 시기의 SST 영상과 SeaWiFS 영상에서도 거의 동일한 해역에서 각각 낮은 표층 수온과 높은 농도의 엽록소 a의 분포를 보였다. 복수의 위성 센서 영상을 공동으로 활용한 결과 영양염이 풍부한 저층 냉수가 표층으로 용승 하여 식물플랑크톤을 비롯한 생물 활동을 증가시켰을 가능성을 보여주고 있으며, 높은 밀도의 생물 활동으로 인한 물질들이 생성한 표층 유막으로 인하여 SAR 영상에서 낮은 후방산란을 나타내는 것으로 판단된다.

Scattering Model for Electrical-Large Target Employing MLFMA and Radar Imaging Formation

  • Wu, Xia;Jin, Yaqiu
    • Journal of electromagnetic engineering and science
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    • 제10권3호
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    • pp.166-170
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    • 2010
  • To numerically calculate electromagnetic scattering from the electrical-large three-dimensional(3D) objects, the high-frequency approaches have been usually applied, but the accuracy and feasibility of these geometrical and physical optics(GO-PO) approaches, to some extent, are remained to be improved. In this paper, a new framework is developed for calculation of the near-field scattering field of an electrical-large 3D target by using a multilevel fast multipole algorithm(MLFMA) and generation of radar images by using a fast back-projection(FBP) algorithm. The MPI(Message Passing Interface) parallel computing is carried out to multiply the calculation efficiency greatly. Finally, a simple example of perfectly electrical conducting(PEC) patch and a canonical case of Fighting Falcon F-16 are presented.