• Journal of electromagnetic engineering and science
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• v.10 no.2
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• pp.61-66
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• 2010

This paper is concerned with an analysis of the back scattering of electromagnetic waves from a target moving along random rough surfaces such as the desert, and sea. First, the discrete ray tracing method(DRTM) is introduced, and then, this method is applied to the back scattering problem in order to investigate the effect of the back scattering from random rough surfaces on the electric field intensities. Finally, numerical examples of various height deviations of the Gaussian type of rough surfaces are shown. It is numerically demonstrated that the back scattering is dominated by the diffractions related to the reflections from the random rough surfaces.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.3
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• pp.16-24
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• 2007

The high-frequency analysis method of back-scattering cross section spectrum of rotating targets is established. The time history of the back-scattering cross section is calculated using a quasi-stationary approach, based on a physical optics and a physical theory of diffraction, combining an adaptive triangular beam method to consider the shadow effect. And the spectra of back-scattering cross section by the Doppler effect are analyzed applying a simple fast Fourier transform method to its time history. The numerical calculation for rotating targets, such as rotating metal plates and underwater propeller, are carried out. The time history appears to be periodic with respect to the number of wings. The backscattering cross section spectrum level and its frequency shift are dependent on the rotating speed, direction, and the shape of the targets.

• Journal of Powder Materials
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• v.16 no.5
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• pp.305-309
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• 2009

The effect of light scattering layers (400 nm, TiO$_2$ particle) of 4 $\mu$m thickness on the dye-sensitized solar cell has been investigated with a 12 $\mu$m thickness of photo-anode (20 nm, TiO$_2$ particle). Two different structures of scattering layers (separated and back) were applied to investigate the light transmitting behaviors and solar cell properties. The light transmittance and cell efficiency significantly improved with inserting scattering layers. The back scattering layer structure had more effective transmitting behavior, but separated scattering layer (center: 2 $\mu$m, back: 2 $\mu$m) structure (9.83% of efficiency) showing higher efficiency (0.6%), short circuit current density (0.26 mA/cm$^2$) and fill factor (0.02). The inserting separating two scattering layers improved the light harvesting, and relatively thin back scattering layer (2 $\mu$m of thickness) minimized interruption of ion diffusion in liquid electrolyte.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.1-5
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• 1977

The scattering of a electromagnetic wave by a perfectly conducting circular cylinder with a sheath immersed in a compressible plasma is treated. The total scattering cross section and the back scattering cross section are obtained for the case of the incident electromagnetic wave. Numerical results are calculated by computer and presented in graphs together with discussions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.57-63
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• 2008

In this paper, the dependence of MOSFET performance on the channel stress is characterized in depth. The tensile and compressive stresses are applied to CMOSFET using a nitride film which is used for the contact etch stop layer (CESL). Drain current of NMOS and PMOS is increased by inducing tensile and compressive stress, respectively, due to the increased mobility as well known. In case of NMOS with tensile stress, both decrease of the back scattering ratio ($\tau_{sat}$) and increase of the thermal injection velocity ($V_{inj}$) contribute the increase of mobility. It is also shown that the decrease of the $\tau_{sat}$ is due to the decrease of the mean free path ($\lambda_O$). On the other hand, the mobility improvement of PMOS with compressive stress is analyzed to be only due to the so increased $V_{inj}$ because the back scattering ratio is increased by the compressive stress. Therefore it was confirmed that the device performance has a strong dependency on the channel back scattering of the inversion layer and thermal injection velocity at the source side and NMOS and PMOS have different dependency on them.

• Journal of electromagnetic engineering and science
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• v.5 no.2
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• pp.87-91
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• 2005

This paper presents a Monte-Carlo FDTD technique to determine the scattered field from a perfectly conducting surface like a sea surface, from which the useful information on the incoherent pattern tendency could be observed. A one-dimensional sea surface used to analysis scattering was generated using the Pierson-Moskowitz model. In order to verify the numerical results by this technique, these results are compared with those of the small perturbation method, which show a good match between them. To investigate the incoherent pattern tendency involved, the dependence of the back scattering coefficients on the different wind speed(U) is discussed for the back scattering case.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• Korean Journal of Remote Sensing
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• v.26 no.2
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• pp.109-114
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• 2010

This paper studies the origin of low back-scattering area appeared on the SAR image taken on the coastal waters off the southeast coast of Korea on July 5, 2000. Cold waters were frequently observed during summer on this coastal waters, and quasi-simultaneously taken AVHRR and SeaWiFS images also showed cold surface waters and high concentration of chlorophyll-a, respectively. By synergetic analysis of multi-sensor satellite images, it is strongly suggested that the cold and nutrient rich upwelling waters caused the high phytoplankton density and high biological activities in the water producing natural films for low back-scattering.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.285-285
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• 2009

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.166-170
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• 2010

To numerically calculate electromagnetic scattering from the electrical-large three-dimensional(3D) objects, the high-frequency approaches have been usually applied, but the accuracy and feasibility of these geometrical and physical optics(GO-PO) approaches, to some extent, are remained to be improved. In this paper, a new framework is developed for calculation of the near-field scattering field of an electrical-large 3D target by using a multilevel fast multipole algorithm(MLFMA) and generation of radar images by using a fast back-projection(FBP) algorithm. The MPI(Message Passing Interface) parallel computing is carried out to multiply the calculation efficiency greatly. Finally, a simple example of perfectly electrical conducting(PEC) patch and a canonical case of Fighting Falcon F-16 are presented.