• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.73-73
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• 2015

• Proceedings of the Korean Magnestics Society Conference
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• 2015.11a
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• pp.120-120
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• 2015

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.3-8
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• 1994

Flow sensor was fabricated with PTC thermistor usually operating as thermostats. The PTC thermistor was manufactured with $(Ba_{0.7}Sr_{0.3})TiO_{3}$ powder and its resistivity as a function of flow velocity was investigated. The resistivity changed from 4.45 $k{\Omega}{\cdot}cm$ to 3.95 $k{\Omega}{\cdot}cm$ as flow velocity varied 0 cm/s to 5 cm/s The sensitivities of the PTC thermistor were -204 (${\Omega}{\cdot}cm$)/(cm/s) and -24 (${\Omega}{\cdot}cm$)/(cm/s) at the flow velocity of 1 cm/s and 5 cm/s, respectively.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.253-260
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• 1992

In this study, the dielectric, structural and electrical properties of Pb(ZnS11/3TNbS12/3T)OS13T-BaTiOS13T-PbTiOS13T system ceramics were investigated with respect to the variation of YS12TOS13T addition amount. As the YS12TOS13T addition amount is increased, the resistivity at 100$^{\circ}C$ and the resonant/antiresonant frequencies and the frequency constant are slowly increased, and the grain growth is restrained until 0.4 wt% YS12TOS13T addition amount but continuously increased with the addition amount more than 0.4 wt% YS12TOS13T. As the YS12TOS13T addition amount is increased, the density, the diffuseness of dielectric constant and the induced polarization are increased until 0.4 wt% YS12TOS13T addition.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.83-87
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• 2023

Y₂SiO₅ Powder based on silicon and yttrium is well known as powder phosphors due to their excellent sustainability and efficiency. A new electroluminescence device was fabricated with Y₂SiO₅:Eu³⁺ powder phosphors though a simple screen printing method. The powder-dispersed electroluminescence device consisted of the Y₂SiO₅:Eu³⁺ powder-dispersed phosphor layer and BaTiO₃-dispersed dielectric layer. The annealing temperature of the phosphor for the best powder electroluminescence performance was optimized to high temperature in ambient atmosphere though a solid-state reaction. The Eu³⁺ concentration for the best device performance was also investigated and furthermore, the thermal dependence of the electroluminescence intensity was investigated at the operating voltage at 100℃, which is the Curie temperature of the BaTiO₃ layer. And the intensity was exponentially increased with voltage and increased linearly with frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.297-297
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• 2007

The $(B_{0.5},Sr_{0.5})TiO_3$ ceramics, which added with low sintering materials $Li_2CO_3$ and ZnBO, was investigated for LTCC(low temperature co-fired ceramic) applications. To compare sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ respectively, we added 1, 2, 3, 4, and 5wt% of $Li_2CO_3$ and ZnBO to $(B_{0.5},Sr_{0.5})TiO_3$. For confirming the sintering temperature, the respective specimens were sintered from $750^{\circ}C$ to $1200^{\circ}C$ by $50^{\circ}C$. The case of $Li_2CO_3$ greatly lowered the sintering temperature of $(B_{0.5},Sr_{0.5})TiO_3$ ($1350^{\circ}C$) below $900^{\circ}C$. The addition of ZnBO improved the loss tangent of $(B_{0.5},Sr_{0.5})TiO_3$. The crystalline structure of $LiCO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ and ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$ was analyzed with the X-ray diffraction (XRD) analysis. The dielectric permittivity and loss tangent of $Li_2CO_3$ doped BST and ZnBO doped BST were measured with the HP 4284A precision. From the electrical characterization, we respectively obtained the dielectric permittivity 1361, loss tangent $6.94{\times}10^{-3}$ at $Li_2CO_3$ doped $(B_{0.5},Sr_{0.5})TiO_3$ (3wt%) and the dielectric constant 1180, loss tangent $3.70{\times}10^{-3}$ at ZnBO doped $(B_{0.5},Sr_{0.5})TiO_3$(5wt%).

• Electrical & Electronic Materials
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• v.3 no.4
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• pp.339-346
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• 1990

미소변위소자에 적합한 전왜세라믹스를 제조하기 위하여 0.85Pb(Zn$_{1}$3-x/MgxNb$_{2}$3/) $O_{3}$-0.10BaTi $O_{3}$-0.05PbTi $O_{3}$조성으로 Mg(mol%)를 변화시키면서 시편을 제조하고 구조적, 유전적, 전기적 특성 및 온도 안정성을 관찰하였다. 큐리온도는 Mg(mol%)가 증가함에 따라 감소하였고 Mg(mol%)가 0.15일 때 유전상수가 가장 높았으며 완만도는 -3.9, 산만도.DELTA.Tc는 21로 가장 컸다. 전계에 따른 유전상수는 감소하였고 Mg(mol%)가 증가할수록 압전정수 d$_{31}$은 감소하였으나 0.05, 0.10, 0.15일 때는 거의 일정하였다. Mg(mol%)가 0.15까지 증가함에 따라 전왜정수 Q$_{31}$은 감소하였고 그 이상에서는 Mg(mol%)가 1/3일때 가장 컸으며 ES-1시편에서의 AC 60(Hz), 11(kV/cm) 전계(electric field)에 의한 왜형을 253*$10^{-6}$을 나타냈다.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.118.1-118.1
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• 2008

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.1
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• pp.53-59
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• 1999

The ceramic capacitor was fabricated by $(Ba_{0.85}Ca_(0.15)TiO_3+ZnO$ + ZnO(from 0.1 to 0.4 mol ratio). The electrical and structural properties of ceramic capacitor for high voltage application was studied in this study. The relative rensity of ceramics capacitor has shown high in all specimen. The grain was a small size from $1.0[\mum]$ to $1.22[\mum]$ and it was increased with ZnO at 0.3 mol ratio. It was stabilized that the temperature coefficient of ceramic capacitor to change temperature had below 100[ppm] at 0.12~10[kHz]. The dielectric reIaxation time was decreased by interface polarization over $110[^{\circ}C]$ and it was increased by space polarization of paraelectric layer below $110[^{\circ}C]$. The insulating layer was increased with ZnO and dielectric constant to voltage was stabilized by 0.1[%].0.1[%].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.771-775
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• 2010

In this study, piezoelectric and dielectric properties of the $(Na_{0.5}K_{0.5})NbO_3-(1-x)(Bi_{0.5}Na_{0.5})TiO_3-xBaTiO_3$ [NKN-(1-x)BNT-xBT] ceramics were investigated. The lead-free NKN-(1-x)BNT-xBT ceramics were fabricated by a conventional mixed oxide method. The results indicate that the addition of $BaTiO_3$ significantly influences the sintering, microstructure, phase transition and electrical properties of NKN-BNT ceramics. A gradual change in the piezoelectric and dielectric properties was observed with the increase of BT contents. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the morphotropic phase boundary (MPB). The $d_{33}$=184 pC/N, $k_p$=0.38, dielectric constant=1455 with dielectric loss value of less than 1% were obtained for the NKN-0.95BNT-0.05BT ceramics sintered at $1150^{\circ}C$ for 2h. These results demonstrate that the NKN-(1-x)BNT-xBT ceramics is an attractive candidate for lead-free piezoelectric materials.