• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.649-652
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• 1999

The (Ba, Sr)TiO$_3$(BST) thin films were fabricated on Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with substrate temperature by XRD, SEM, EDS and AES depth profils. Increasing the substrate temperature, barium multi titanate phases were decreased. The BST thin film had a structure of perovskite type, and had peaks of (100), (200) at the substrate temperature of 50$0^{\circ}C$. When the BST thin films were deposited at the substrate temperature of 50$0^{\circ}C$, the composition ratio of Ba/sr was 52/48.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.46-52
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• 1985

(Ba0.8. Sr0.2) $TiO_3$ semiconducting ceramic with and without Ti-excess composition were prepared by various sintering temperature. The effects of Ti compositions on the samples were discussed in terms of color micro-structure resistivity at room temperature and the positive temperature coefficient resistivity(PTCR). The 1.02mol Ti-excess composition provides better PTCR properties and has uniform micrositructures with 5-7${\mu}{\textrm}{m}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.67-67
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• 2001

• Journal of the Microelectronics and Packaging Society
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• v.3 no.1
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• pp.25-32
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• 1996

본 연구에서는 BaTiO3에 Sr과 Pb를 치환시켜TiO3 조성의 세라믹 유전체를 제조한 후 페로브스카이트형 Ba(Cu, Mo)O3를 저융점 flux 로 첨가하여 120$0^{\circ}C$ 이하의 여러온도에 서 소결을 행하였으며 flux 첨가량의 변화에 따른 소결거동 및 유전 특성의변화를 조사하였 다. 이러한 저온 소결용 유전체 세라믹스가 MLCC의 응용시 Pt-Pd계의합금을 내부전극으로 사용가능성을 검토하였다. Flux를 4mol%첨가한 TiO3-0.04Ba(Cu,Mo)O3 조성의 유전체는 120$0^{\circ}C$의 온도에서 2시간 소결했을 경우 소결밀도는 이론밀도의 95% 에 근접하였으며 이때 의 비유전율은 8000이상을 나타내었다. 이러한 소결 온도의 감소는 저융점인 ba(Cu,Mo)O3 계의 flux가 첨가되면서 비교적 낮은 온도에서 액상을 형성하여 소결을 촉진시켰기 때문으 로 사료된다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.265-269
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• 2000

$(Ba, Sr)TiO_3$thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) at different CF4/Ar gas mixing ratios. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1800{AA}/min$ under $CF_4/(CF_4+Ar)$ of 0.1, 600 W/350 V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) results show that surface reaction between Ba, Sr, Ti and C, F radicals occurs during the (Ba, Sr)TiO3 etching. To analyze the composition of surface residue after the etching, films etched with different CF_4/Ar$ gas mixing ratio were investigated using XPS and secondary ion mass spectroscopy (SIMS).

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.651-659
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• 1994

BaTiO3 ceramics were sintered on Al2O3, MgAl2O4, MgO and Mg-, Ca-, Y-stabilized zirconia setters. Then the influence of setters on the microstructure of BaTiO3 ceramics and the stability of setters were investigated by SEM, EDAX and XRD analyses. The microstructure of BaTiO3 ceramics sintered on Al2O3, MgAl2O4, MgO and Mg-PSZ showed large grain growth, but little grain growth on Ce-TZP(Tetragonal Zirconia Policrystal). Mg-PSZ(Partially Stabilized Zirconia), Ca-PSZ, Ce-TZP setters showed extensive phase transformation. Y-TZP and fused Y-SZ (Stabilized Zirconia) setters were stable. The liquid sintering aids of BaTiO3 ceramics accelerate mass transport. The reaction of SrTiO3 in BaTiO3 with ZrO2 resulted in the formation of SrZrO3.

• Journal of the Korean Ceramic Society
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• v.22 no.2
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• pp.63-67
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• 1985

$BaTiO_3$ and $SrTiO_2$ were mixed with the mole ratio of 36:65:50, 50: 50 and 65:35 and then heated at 110$0^{\circ}C$~130$0^{\circ}C$ for 1~64 hrs. The solid state reactions and dielectric properties were investigated as a function of amount of solid solution. Activation energy of solid solution decreased with increasing amount of $BaTiO_3$ due to fast diffusion of $Ba^{2+}$ ions. Dielectric constants increased with increasing the soaking time at 125$0^{\circ}C$and 130$0^{\circ}C$ and Curie Temperature shifted to higher temperature with increasing the soaking time at 125$0^{\circ}C$ and 130$0^{\circ}C$. It attributes to the am-ount of solid solution and grain growth, Dielectric constants decreased and Curie Temperature shifted to lower temperature due to decreasing polari-zability.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.516-524
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• 1995

In this study, to prepare the dielectric (Ba, Sr)TiO3 thin films by the sol-gel process, Titaminum (IV) sio-propoxide (Ti[OCH(CH3)2]4), Ba and Sr acetate were used for sol and thin films were prepared by dip-coating process. Stability of sol decreased with the increase of Sr, and thickness of thin films were obtained 0.13~0.17${\mu}{\textrm}{m}$ by 1 coating cycle. Transmittance of amorphous thin films heated at 500 and 55$0^{\circ}C$ was very good, and crystallization tendency of thin films according to heat-treatment temperature and crystallization characteristics of thin films heated at 11$0^{\circ}C$ for 3 hrs were analysed. As a result, good perovskite structure was obtained higher than 100$0^{\circ}C$, and tetragonality of thin film was decreased but pyrochlore was formed with increasing Sr. In case of addition to substitute 0.4mol% Sr for Ba, dielectric constant was 288 and loss factor (tan $\delta$) was 0.04.