• 한국세라믹학회지
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• 제31권10호
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.649-652
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• 1999

The (Ba, Sr)TiO$_3$(BST) thin films were fabricated on Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with substrate temperature by XRD, SEM, EDS and AES depth profils. Increasing the substrate temperature, barium multi titanate phases were decreased. The BST thin film had a structure of perovskite type, and had peaks of (100), (200) at the substrate temperature of 50$0^{\circ}C$. When the BST thin films were deposited at the substrate temperature of 50$0^{\circ}C$, the composition ratio of Ba/sr was 52/48.

• 한국세라믹학회지
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• 제35권8호
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• pp.864-870
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• 1998

The effect of {{{{ {{Nb }_{2 }O }_{5 } }} and CoO addition on the temperature dependence of the {{{{ {BaTiO }_{3 } }}-based ceramic capa-citor has been studied. X7R with moderate temperature dependence has been developed by means of pre-cisely controlled {{{{ {{Nb }_{2 }O }_{5 } }}/CoO ratio. Dielectric constant(K) and dissipation factor(DF) were 3500 and 1.5% respectively. As the content of {{{{ {{Nb }_{2 }O }_{5 } }} was increased the curie temperature(Tc) was shifted to lower tem-perature and the dielectric constant at Tc was decreased. The proper addition of CoO with {{{{ {{Nb }_{2 }O }_{5 } }} improved the temperature dependence of dielectric properties of the {{{{ {BaTiO }_{3 } }}-based ceramic capacitor.

• 환경위생공학
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• 제12권1호
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• pp.25-37
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• 1997

The synthesis of high purity and ultra-fine $BaTiO_{3}$ by precipitation with gaseous $NH_{3}$ as precipitator was investigated to find an alternative process to solve various problems of present wet methods. This study consisted of two parts ; synthesis of $BaTiO_{3}$ precipitation with gaseous $NH_{3}$ and test of electrical property for the $La_{2}O_{3}$ doped $BaTiO_{3}$. The proper condition for the synthesis of $BaTiO_{3}$ by precipitation with gaseous $NH_{3}$ is as follows. The pH was 9.0. $H_{2}O_{2}$ mole ratio to $TiCl_{4}$ was 10. $NH_{3}$ gas follow rate did not influence the synthesis of $BaTiO_{3}$. The calcination temperature of $BaTiO_{3}$ was $300^{\circ}C$. Also, the synthesis of $La_{2}O_{3}$-doped $BaTiO_{3}$ was tested through the wet process. Under these condition, the shape of prepared $BaTiO_{3}$ powder was spherical type and the size of that was about $0.2{\mu}m$. After the powder was pressed, this green body was sintered at the $1300^{\circ}C$. Under these conditions, the water absorptance and the density of the obtained sintered body were below 0.04 %, 5.2 g/$cm^{3}$, respectively. Also the grain size of that was about $10{\mu}m$ and it was similar to commercial product.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.42-45
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_{x})TiO_{3}+yZrO_{2}$ wt% (x=0.10, 0.15, 0.20, y=0.5~3.0) specimens were fabricated by the mixed-oxide method and then the structural and dielectric properties as a function of the composition ratio and $ZrO_2$ contents were studied. All BSCT specimens showed dense and homogeneous structure without the presence of the seconds phase. The Curie temperature and the dielectric constant at room temperature decreased with increasing the Ca/Ba composition ratio and $ZrO_2$ content. The BSCT(50/40/10) specimens showed the excellent tunability property. And the tunability were increased with increasing the contents of $ZrO_2$.

• Journal of the Optical Society of Korea
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• 제8권2호
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• pp.79-82
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• 2004

High-efficiency mutually pumped phase conjugation (MPPC) has been realized in a BaTiO$_3$:Ce crystal in the bridge geometry. The laser source is a dye laser operating from 580 to 650 nm. We have observed that, with a beam ratio of 1, self-pumped phase conjugation (SPPC) appears and competes with MPPC at short wavelengths while it disappears at long wavelengths. When the beam ratio is slightly higher than 1, SPPC no longer occurs. Phase conjugate reflectivity near 500% has been obtained at a beam ratio of 70. Our experiments demonstrate that Ce-doped BaTiO$_3$crystals, which have already been found efficient in SPPC experiments, are also efficient for the generation of MPPC.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• 한국세라믹학회지
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• 제43권7호
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• pp.421-426
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• 2006

[ $(BaSr)TiO_3$ ] thick films were prepared by tape casting method, using $BaTiO_3\;and\;SrTiO_3$ powder slurry in order to investigate dielectric properties i.e. dielectric constant, ${\varepsilon}_r$, Curie temperature, $T_c$. Grain growth within $(BaSr)TiO_3$ thick films was observed with increasing weight ratio of $BaTiO_3$. This observation can be explained by phenomena of substitution of $Sr^{2+}$ ion for $Bi^{2+}$ ion in the $BaTiO_3$ system. Also, the Curie temperature in $(BaSr)TiO_3$ thick films was shifted to lower temperature range with increasing $ SrTiO_3$. Furthermore, Curie temperature having maximum dielectric constant was in the range of $-40^{\circ}C\;to\;30^{\circ}C$, and hence sharper phase transformation occurred at Curie temperature. There occurred decrease in tunability and k-factor of $(Ba_{0.6}Sr_{0.4})TiO_3$ calculated from the dielectric constant, ${\varepsilon}_r$ above Curie temperature. In addition, above the $60^{\circ}C$, phase fixation was observed. This means that internal stress relief occurred with increasing $90^{\circ}$ domains.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.100-104
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• 2003

$BaTiO_3$ ceramic thin films were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PTCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperatures. Second heat treatments of the specimen were performed in the temperature range of 400 to $1350^{\circ}C$. X-ray diffraction patterns of $BaTiO_3$ thin films show that the specimen heat treated below $600^{\circ}C$ is an amorphous phase and the one heat treated above $1100^{\circ}C$ forms a poly-crystallization. In the specimen heat-treated at $1300^{\circ}C$, a lattice constant ratio (c/a) was 1.188. Scanning electron microscope(SEM) image of $BaTiO_3$ thin films of the specimen heat treated in between 900 and $1100^{\circ}C$ shows a grain growth. At $1100^{\circ}C$, the specimen stops grain-growing and becomes a poly-crystallization.