• Journal of the Korean institute of surface engineering
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• v.46 no.5
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• pp.181-186
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• 2013

We performed plasma spraying for 2001 (Bi:Cu = 2:1), 0212 (Sr:Ca:Cu = 2:1:2) oxide powders. $Bi_2Sr_2CaCu_2Ox$ (2212) superconductor has been prepared by PMP-AT (partial melting process-annealing treatment). The 2212 phase is synthesized between Sr-Ca-Cu oxide coating layer (0212) and Bi-Cu oxide coating layer (2001) by movement of partial melted Bi on 2001 layer and the diffusion reaction (Cu, Sr, Ca) after PMP-AT. There are two different coating layers on joining process. The one is ABAB coating layers and the other is BAAB coating layers by arrangement of 2001 (A), 0212 (B) layers. We performed heat treatment these two different coating layers processes under same PMP-AT conditions. We obtained Bi-2212 superconducting layers at each experimental condition, and the result of MPMS, the critical temperature was showed about 78 K. But the microstructure images and result of EDS as each experimental variable were showed about the qualitatively different Bi-2212 superconducting phases. We also deduced the generation mechanism of Bi-2212 superconducting layer as a result of these experimental data, microstruc ture images, EDS data and phase diagram.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.997-1002
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• 2002

BSCCO thin films are fabricated by an ion beam sputtering method, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about 730$^{\circ}C$ and decreased linearly over about 730$^{\circ}C$ In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$\sub$2/O$\sub$3/. It was concluded that Bi(2212) thin film constructs from the partial melted Bi(2201) phase with the aid of the liquid phase of Bi$\sub$2/O$\sub$3/.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.80-84
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coeffi-cient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi\ulcornerO\ulcorner, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.929-931
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• 1999

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, ozone gas pressure dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.25-28
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• 2001

Bi-2212 HTS tube was fabricated by centrifugal forming process(CFP). As a variation of melt casting process(MCP) or centrifugal casting technique, the centrifugal forming process is a flexible method for manufacturing Bi-2212 bulk tubes and has been optimized to achieve smooth surface and uniform thickness. At this process, the slurry was prepared in the mixing ratio of 10:1 between Bi-2212 powder and binder and initially charged into the rotating mold under the speed of 300~450 rpm Heat-treatment was performed at the temperature ranges of 860 ~ $890^{\circ}C$ in air for partial melting. The HTS tube fabricated by centrifugal forming process at $890^{\circ}C$ under the rotating speed of 450 rpm was highly densified and the plate-like grains with more than 20$\mu$m were well oriented along the rotating axis. The measured Tc and Jc at 10K were around 85K and 3,000A/cm2 respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.537-538
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• 2006

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 650 and $720^{\circ}C$ and the highly condensed ozone gas pressure ($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}\;Torr$.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.90-90
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• 2004

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.90-90
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• 2008

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.70-70
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• 2006