• 전기학회논문지
• /
• 제61권1호
• /
• pp.89-93
• /
• 2012

c-BN films were deposited on SKH-51 steels by electron assisted hot filament CVD method and microstructure development was studied processing parameters such as bias voltage, temperature, etching and phase transformation at boundary layer between BN compound and steel to develop a high performance wear resistance tools. A negative bias voltage higher than 200V at substrate temperature of $800^{\circ}C$ and gas pressure of 20 torr in B2H6-NH3-H2 gas system was one of optimum conditions to produce c-BN films on the SKH-51 steels. Thin layer of hexagonal boron nitride phase was observed at the interface between c-BN layer and substrate.

• Journal of Ceramic Processing Research
• /
• 제17권7호
• /
• pp.763-767
• /
• 2016

The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.409-409
• /
• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.

• 폴리머
• /
• 제37권6호
• /
• pp.722-729
• /
• 2013

Poly(dimethyl siloxane)(PDMS, 실리콘 고무)의 열전도도 향상을 위하여 보론 나이트라이드과 탄소나노튜브를 열전도성 충전제로 사용하였다. 보론 나이트라이드의 함량은 0에서 100 phr로 증가시켰으며, 탄소나노튜브의 함량은 보론 나이트라이드의 함량을 100 phr로 고정시킨 상태에서 0에서 4 phr로 증가시켰다. 실리콘 고무 복합재료의 열전도도는 보론 나이트라이드 함량의 증가에 따라 증가하였으나, 탄소나노튜브를 추가로 첨가하더라도 열전도도 향상에 대한 효과는 미미하였다. 100 phr 함량의 보론 나이트라이드 함량에 탄소나노튜브를 충전 시 복합재료의 열분해가 가속화되는 예상치 못한 결과를 얻었다. 이를 해석하기 위하여 Horowitz-Metzger 방법을 이용하여 열분해 활성화 에너지를 계산하였다. 또한 보론 나이트라이드/탄소나노튜브가 충전된 실리콘 고무 복합재료의 경화거동, 전기저항 및 기계적 물성을 연구하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
• /
• pp.120-120
• /
• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.185.2-185.2
• /
• 2014

We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2004년도 춘계학술대회 발표 논문집
• /
• pp.59-62
• /
• 2004

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds. The instability of the 4-88-4 defect generates the structural transformation into BNNTs with no defect at about 1500 K.

• Nano
• /
• 제13권11호
• /
• pp.1850133.1-1850133.9
• /
• 2018

The hexagonal boron nitride nanosheets (BN) were firstly treated by silane coupling agents 3-aminopropyltriethoxysilane (KH550) and 3-glycidoxypropyl-trimethoxysilane (KH560) to introduce some amino and epoxy (EP) groups on the BN surface. These modified BN nanosheets were incorporated into an EP matrix to prepare BN@KH560/EP composites with excellent thermal conductivity and electrical insulation properties. Results showed that the thermal conductivity of BN@KH560/EP composite with 20 vol% BN dosage was found to be 0.442 W/($m{\cdot}K$), which was 81% higher than that of pure EP resin. Both BN/EP composites treated by KH550 and KH560 showed rather good electrical insulation properties, although the dielectric constant of BN@KH550/EP composites were slightly higher than BN@KH560/EP composites. Moreover, BN@KH560/EP composites also showed better thermal and mechanical properties than that of BN@KH550/EP composites.

• 한국세라믹학회지
• /
• 제27권7호
• /
• pp.869-876
• /
• 1990

Hexagonal boron nitride was synthesized from boron oxide and sodium amide in ammonia gas stream. The reaction mechanisms and characteristics of as synthesized boron nitride was investigated by means of TG, DTA, IR, XRD, SEM and PSA. The results are ; 1) hexagonal boron nitride was synthesized from reactions at temperatures above 40$0^{\circ}C$ 2) Sodium metaborate was present as by-product after reaction so that the reaction mechanism is reduced as follows : 2B2O3＋3NaNH2longrightarrowBN＋3NaBO2＋2NH3. 3) boron nitride obtained at the reaction temperature below 40$0^{\circ}C$ is found to have random layer strudcture but the structure transits to ordered layer structure rapidly with increasing reaction temperature, showing separation of (101) differaction line from (10)band in XRD pattern of the reaction product at 50$0^{\circ}C$.

• Composites Research
• /
• 제28권5호
• /
• pp.270-276
• /
• 2015

Polyvinylidene fluoride (PVDF)-based nanocomposites are fabricated by incorporation of boron nitride (BN) nanosheets with anisotropic orientation for a potential high thermal conducting ferroelectric materials. The PVDF is dissolved in dimethylformamide (DMF) and homogeneously mixed with exfoliated BN nanosheets, which is then cast into a polyimide film under application of high magnetic fields (0.45~10 T), where the direction of the filler alignment was controlled. The BN nanosheets are exfoliated by a mixed way of solvothermal method and ultrasonication prior to incorporation into the PVDF-based polymer suspension. X-ray diffraction, scanning electron microscope and thermal diffusivity are measured for the characterization of the polymer nanocomposites. Analysis shows that BN nanosheets are exfoliated into the fewer layers, whose basal planes are oriented either perpendicular or parallel to the composite surfaces without necessitating the surface modification induced by high magnetic fields. Moreover, the nanocomposites show a dramatic thermal diffusivity enhancement of 1056% by BN nanosheets with perpendicular orientation in comparison with the pristine PVDF at 10 vol % of BN, which relies on the degree of filler orientation. The mechanism for the magnetic field-induced orientation of BN and enhancement of thermal property of PVDF-based composites by the BN assembly are elucidated.