• Title/Summary/Keyword: BM25

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Phase Conjugator for Retrodirective Array Antenna Applications (능동 역지향성 배열 안테나용 공액 위상변위기)

  • Chun Joong-Chang;Jeung Deuk-Soo;Lee Byung-Rho;Tack Han-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.2 s.93
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    • pp.134-138
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    • 2005
  • In this paper, we have developed a new type of the microwave phase conjugator for the active retrodirective antenna array. The circuit topology is consisted of a 2-port structure to avoid the complexity of LO and RF signal combination and matching, using the cascade connection of two single-ended mixers. The operating frequencies are 4.0 GHz, 2.01 GHz and 1.99 GHz for LO, RF, and IF, respectively. Conversion loss is measured to be -7 dB and 1-dB compression point 15 dBm with the LO power of 9 dBm. For the most important parameter, the isolation between RE leakage and IF signal is as high as 25 dB.

A realization of up/down-stream transmission on an optical subscriber network with the PON structure (PON구조의 광가입자망에서 상/하향전송 구현)

  • 김효중;이찬구;강성수;이만섭
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.3
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    • pp.795-806
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    • 1996
  • A structure which transmits and receives 3 subscribers packet data through an optical splitter node in an optical subscriber network of PON wave suggested and realized. All the functions which are necessary to use PON structure such as 155.52Mb/s multiplexer/demultiplexer of down-stream signal, 25.92Mb/s multiplexer/demultiplexer of up-stream signal, frame synchronizer, and phase aligner for aligning phase of the clock and received data have been integrated within 2 ICs using CMOS technonology. TDMAtechnology was suggested for up-stream transmission. In the optical up-stream transmission of the urst signals transmissionquality degradataion by APC and AGC of optical tranceiver was observed. By compensating the degradation, more than 17dB of link budget which is enough to satisfy 11.2dBthat is required in SWAN of PON architecture has been obtained with optical transceiver whose power and sensitivity are -17dBm and -34dBm respectively.

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UHF-Band 1 kW Solid State Pulsed Power Amplifier for Thermoacoustic Imaging Application (열음향 응용을 위한 1 kW급 UHF 대역 반도체 펄스 전력증폭기)

  • Lee, Seung-Min;Park, Seung-Pyo;Choi, Seung-Bum;Lee, Moon-Que
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.1
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    • pp.92-95
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    • 2016
  • In this paper, an UHF-band 1 kW solid-state pulsed power amplifier was designed and implemented for the thermoacoustic imaging(TAI) at 900 MHz. The designed power amplifier has a pulse width of $80{\mu}s$ and a duty cycle of 1 % for short-pulse operation. The overall amplifier was implemented by combining of 16 single-power amplifiers adopting MRFE6P9220HR3 LDMOSFET using wilkinson power dividers. The solid-state pulsed power amplifier shows 25 % drain efficiency with a gain of 76.2 dB when the output power is 60.2 dBm for a -16 dBm input power at center frequency.

Realization of a 7.7~8.5GHz 10 W Solid-State Power Amplifier (7.7~8.5 GHz 10 W 반도체 전력 증폭기의 구현에 관한 연구)

  • 박효달;김용구
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.19 no.12
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    • pp.2489-2497
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    • 1994
  • This paper presents the development of a 10 W solid-state hybrid power amplifier(SSPA). operating over $7.7\sim8.5GHz$. The fabrication and measurement of this amplifier are performed with 3 sections, such as the front one for high gain, the middle one for driving, and high power one, to minimize the risk of failure and to increase the easiness of development. and then the final amplifier is realized by connecting 3 sections above mentioned, DC bias circuit, and temperature compensation circuit on one housing. Total small signal gain obtained is about $45\pm1dB$, the input and output return losses are 25 and 27 dB respectively. The output power measured at 1 dB gain compression point for 3 frequencies at 7.7, 8.1, and 8.5 GHz are $39.8\sim40.4dBm$, which is about 10 W. and the 3rd-order harmonic powers of 2 tones test are 13.34 dBc at output power 37.5 dBm. These obtained results satisfies the initially required specification. and the realized SSPA can be installed as a subsystem of the microwave transponder for telecommunication.

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Study on Sensitivity of Burst-Mode Optical Receiver Depending on Photodiode Capacitance (포토다이오드의 정전용량에 따른 버스트모드 광 수신소자의 수신감도 연구)

  • Lee, Jung-Moon;Kim, Chang-Bong
    • Korean Journal of Optics and Photonics
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    • v.19 no.5
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    • pp.343-348
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    • 2008
  • This study was carried out to commercialize FTTH by developing a burst mode optical receiver for E-PON. The optical receiver was manufactured by minimizing the capacitance of a photodiode to improve sensitivity for meeting 10, 20 km OLT Rx standard of E-PON at the transmission speed of 1.25 Gb/s. When bit-error ratio is $10^{-12}$ and PRBS is $2^5-1$, sensitivity is -26 dBm, loud/soft ratio is 23 dB. Both preamble time and guard time were set to 102.4 ns (128 bit). After comparing a photodiode whose capacitance is 0.53 pF with another photodiode whose capacitance has been minimized to 0.26 pF, we could see that sensitivity improved to 0.7 dBm and so did bandwidth to 190 MHz of burst mode for the optical receiver manufactured by the photodiode whose capacitance is 0.26 pF.

Analysis on Characteristics for Sharing Co-channel between Communication Systems (통신 시스템간 채널 공유를 위한 특성 분석)

  • Cho, Ju-Phil;Cho, Sang-In;Kang, Kyu-Min;Hong, Heon-Jin
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.11 no.4
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    • pp.251-256
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    • 2011
  • In this paper, we analyze the distance between two systems, WiBro and WLAN, compared to standard interference probability for channel co-use in order to be used as a criteria in realization. Co-channel and adjacent channel interference probability and its effect of (WiBro) into Wireless LAN (WLAN) in TV White Spaces (TVWS) is evaluated through Spectrum Engineering Advanced Monte Carlo Analysis Tool(SEAMCAT) based on the Monte-Carlo simulation method. As a result, in the case of co-channel interference, the minimum distance between WiBro Mobile Station(MS) and WLAN User Equipment (UE) should be 210 m to allow the maximum transmitter power of WiBro UE of 25 dBm. The transmit power of WiBro BS have to be reduced to -4.96 dBm.

Design and Fabrication of Ku-Band Power Amplifier Using GaN HEMT Die (GaN HEMT Die를 이용한 Ku-대역 전력 증폭기 설계 및 제작)

  • Kim, Sang-Hoon;Kim, Bo-Ki;Choi, Jin-Joo;Jeong, Byeoung-Koo;Tae, Hyun-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.6
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    • pp.646-652
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    • 2014
  • This paper presents a design and fabrication of Ku-band power amplifier using Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die. In order to fabricate the low-cost Ku-band power amplifier, a Printed Circuit Board(PCB) was used for input/output matching circuits instead of manufacturing process to use an expensive substrate. The measured output power is 42.6 dBm, the drain efficiency is 37.7 % and the linear gain is 7.9 dB under pulse operation at the frequency of 14.8 GHz. Under the continuous wave(CW) test, the output power is 39.8 dBm, the drain efficiency is 24.1 % and the linear gain is 7.2 dB.

A Ku-band 3 Watt PHEMT MMIC Power Amplifier for satellite communication applications (위성 통신 응용을 위한 Ku-대역 3 Watt PHEMT MMIC 전력 증폭기)

  • Uhm, Won-Young;Lim, Byeong-Ok;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.24 no.4
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    • pp.1093-1097
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    • 2020
  • This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

REALM for Open-domain Question Answering of Korean (REALM을 이용한 한국어 오픈도메인 질의 응답)

  • Kan, Dong-Chan;Na, Seung-Hoon;Choi, Yun-Su;Lee, Hye-Woo;Chang, Du-Seong
    • Annual Conference on Human and Language Technology
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    • 2020.10a
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    • pp.192-196
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    • 2020
  • 최근 딥러닝 기술의 발전에 힘입어 오픈 도메인 QA 시스템의 발전은 가속화되고 있다. 특히 IR 시스템(Information Retrieval)과 추출 기반의 기계 독해 모델을 결합한 접근 방식(IRQA)의 경우, 문서와 질문 각각을 연속 벡터로 인코딩하는 IR 시스템(Dense Retrieval)의 연구가 진행되면서 검색 성능이 전통적인 키워드 기반 IR 시스템에 비해 큰 폭으로 상승하였고, 이를 기반으로 오픈 도메인 질의응답의 성능 또한 개선 되었다. 본 논문에서는 경량화 된 BERT 모델을 기반으로 하여 Dense Retrieval 모델 ORQA와 REALM을 사전 학습하고, 한국어 오픈 도메인 QA에서 QA 성능과 검색 성능을 도출한다. 실험 결과, 키워드 기반 IR 시스템 BM25를 기반으로 했던 이전 IRQA 실험결과와 비교하여 더 적은 문서로 더 나은 QA 성능을 보였으며, 검색 결과의 경우, BM25의 성능을 뛰어넘는 결과를 보였다.

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A Low-Crosstalk Design of 1.25 Gbps Optical Triplexer Module for FTTH Systems

  • Kim, Sung-Il;Park, Sun-Tak;Moon, Jong-Tae;Lee, Hai-Young
    • ETRI Journal
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    • v.28 no.1
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    • pp.9-16
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    • 2006
  • In this paper, we analyzed and measured the electrical crosstalk characteristics of a 1.25 Gbps triplexer module for Ethernet passive optical networks to realize fiber-tothe-home services. Electrical crosstalk characteristic of the 1.25 Gbps optical triplexer module on a resistive silicon substrate should be more serious than on a dielectric substrate. Consequently, using the finite element method, we analyze the electrical crosstalk phenomena and propose a silicon substrate structure with a dummy ground line that is the simplest low-crosstalk layout configuration in the 1.25 Gbps optical triplexer module. The triplexer module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and an analog photodetector as a cable television signal receiver. According to IEEE 802.3ah and ITU-T G.983.3, the digital receiver and analog receiver sensitivities have to meet -24 dBm at $BER=10^{-12}$ and -7.7 dBm at 44 dB SNR. The electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the dummy line with $100\;{\mu}m$ space from the signal lines and 4 mm separations among the devices satisfies the electrical crosstalk level compared to a simple structure. This proposed structure can be easily implemented with design convenience and greatly reduce the silicon substrate size by about 50 %.

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