• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.313-313
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• 2010

$BiFeO_3$ (BFO), when forming a solid solution with $BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$/Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of $700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of $BaTiO_3$ for $BiFeO_3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.197-197
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• 2010

Pb(Zr,Ti)O3/BiFeO3/(PZT/BFO) multilayer thin films were coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. With increasing the annealing temperature, the dielectric and leakage current density properties of multilayered PZT/BFO/PZT thin films were improved. The current density of the PZT/BFO/PZT filmannealing at $600^{\circ}C$ was about 189.39(x10-9A/cm2) at 10V. The relative dielectric constant and the dielectric loss of the PZT/BFO/PZT thin film annealing at $600^{\circ}C$ were about 318 and 0.161%, respectively.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.30.1-30.1
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• 2011

Multiferroic thin films with composition $0.9BiFeO_3-0.1Ba(Cu_{1/3}Nb_{2/3})O_3$ were epitaxially grown by pulsed laser deposition on $SrRuO_3(001)/SrTiO_3$ (000) substrate $0.9BiFeO_3-0.1Ba(Cu_{1/3}Nb_{2/3})O_3$, which is assumed to be morphotropic phase boundary (MPB), that showed superior dielectric, ferroelectric and magnetic properties in our study on polycrystalline films. The structures of epitaxially grown films were characterized by means of XRD. From P-E measurements, samples exhibited typical ferroelectric hysteresis loops and large remnant polarization, whose value is much larger than those of pure BFO film. The enhancement of dielectric, ferroelectric, magnetic properties was attributed to the structural distortion induced by the BCN addition and the high physical stress effect.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 임시총회 및 하계학술연구발표회
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• pp.7-8
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• 2011

Basically, the lattice mismatch between film and substrate can make those BiFeO3(BFO) films distorted with strain structure. BFO phase can be stabilized on LaAlO3(LAO) represents the example of a multiferroic with giant axial ratio. Its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion and related to the rotation of the oxygen octahedra. In this study, we show that phases with a tetragonal-like epitaxial BFO films can indeed be ferroelectric and also can be stabilized via epitaxial growth onto LAO. Recent reports on epitaxial BFO films show that the crystal structure changes from nearly rhombohedral ("R-like") to nearly tetragonal("T-like") at strains exceeding approximately -4.5%, with the "T-like" structure being characterized by a highly enhanced c/a ratio. While both the "R-like" and the "T-like" phases are monoclinic, our detailed x-ray diffraction results reveal asymmetry change from MA and MC type, respectively. By applying additional strain or by modifying the unit cell volume of the film by substituting Ba for Bi, the monoclinic distortion in the "T-like" MC phase is reduced, i.e. the system approaches a true tetragonal symmetry. There are two different M-H loops for $Bi_{1-x}Ba_xFeO_{3-{\delta}}$(BBFO) and BFO films on SrTiO3(STO) & LAO substrates. Along with the ferroelectric characterization, these magnetic data indicate that the BFO phase stabilized on LAO represents the first example of a multiferroic with giant axial ratio. However, there is a significant difference between this phase and other predicted ferroelectrics with a giant axial ratio: its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion. Therefore, in going from bulk to highly-strained films, a phase sequence of rhombohedral(R)-to-monoclinic ["R-like" MA-to-monoclinic, "T-like" MC-to-tetragonal (T)] is observed. This sequence is otherwise seen only near morphotropic phase boundaries in lead-based solid-solution perovskites (i.e. near a compositionally induced phase instability), where it can be controlled by electric field, temperature, or composition. Our results show that this evolution can occur in a lead-free, stoichiometric material and can be induced by stress alone. Those major results are summarized as follows ; 1) Ba-doping increases the unit cell volume, 2) BBFO on LAO can be fully strained up to x=0.08 as a strain limit (Fig. 1), 3) P(E) & M(H) properties can be tuned by the variation of composition, strain, and film thickness.

• Journal of Magnetics
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• 제21권1호
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• pp.29-34
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• 2016

Nd-doped $BiFeO_3$ materials were synthesized via a sol-gel method. The crystal structure, magnetic properties, and complex impedance spectroscopy of multiferroic $Bi_{1-x}Nd_xFeO_3$ (BNFO) materials were investigated by X-ray diffraction (XRD), Raman scattering, vibrating sample magnetometer (VSM), and complex impedance spectroscopy. Our results show that the lattice crystal constants (a, c) and the ratio c/a of BNFO materials decreased with increasing Nd concentration. All samples exhibited weak ferromagnetism at room temperature, and the magnetization of samples was enhanced by the presence of $Nd^{3+}$ ions. There was an enhancement in the spontaneous magnetization of BFO with increasing Nd concentration, which is attributable to the collapse of the spin cycloid structure.

• 한국자기학회지
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• 제20권6호
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• pp.222-227
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• 2010

RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/$SiO_2$/Si(100) 기판위에 $BiFeO_3$ 박막을 증착하였고, 스퍼터링 공정에서 산소량이 $BiFeO_3$ 박막에 미치는 영향을 조사하였다. $BiFeO_3$ 박막은 XRD 회절패턴의 결과를 통하여 소량의 불순물상이 존재하는 페로브스카이트 구조로 결정화되었다. $O_2$ 가스의 유량은 박막의 미세구조 및 자기적 특성에 많은 영향을 끼친다. $O_2$ 가스의 유량이 증가함에 따라 박막의 표면 거칠기 및 grain size가 증가하였다. $BiFeO_3$ 박막은 상온에서 약자성적인 거동을 보였으며, PFM 측정을 통하여 박막의 미세구조와 압전계수와의 상관관계를 조사하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• 한국세라믹학회지
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• 제49권6호
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• pp.485-492
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• 2012

Dense and single phase $BiFeO_3$ (BFO) ceramics were prepared using attrition milled calcined (coarse) powders of an average particle size of ${\approx}3{\mu}m$ by conventional sintering process. A relative density of ${\approx}96%$ with average grain size $7.3{\mu}m$ was obtained when the powder compacts were sintered at $850^{\circ}C$ even for a shorter duration of 10 min. In contrast, densification barely occurred at $800^{\circ}C$ for up to 12 h rather the microstruce showed the growth of abnormal grains. The grain growth behavior at different temperatures is discussed in terms of nonlinear growth rates with respect to the driving force. The sample sintered at $850^{\circ}C$ for 12 h showed enhanced electrical properties with leakage current density of $4{\times}10^{-7}A/cm^2$ at 1 kV/cm, remnant polarization $2P_r$ of $8{\mu}C/cm^2$ at 20 kV/cm, and minimal dissipation factor (tan ${\delta}$) of ~0.025 at $10^6$ Hz. These values are comparable to the previously reported values obtained using unconventional sintering techniques such as spark plasma sintering and rapid liquid phase sintering.