• Journal of Radiation Protection and Research
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• 제42권3호
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• pp.141-145
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• 2017

Background: The concrete walls inside the vaults of cyclotron facilities are activated by neutrons emitted by the targets during radioisotope production. Reducing the amount of radioactive waste created in such facilities is very important in case they are decommissioned. Thus, we proposed a strategy of reducing the neutron activation of the concrete walls in cyclotrons during operation. Materials and Methods: A polyethylene plate and B-doped Al sheet (30 wt% of B and 2.5 mm in thickness) were placed in front of the wall in the cyclotron room of a radioisotope production facility for pharmaceutical use. The target was Xe gas, and a Cu block was utilized for proton dumping. The irradiation time, proton energy, and beam current were 8 hours, 30 MeV, and $125{\mu}A$, respectively. To determine a suitable thickness for the polyethylene plate set in front of the B-doped Al sheet, the neutron-reducing effects achieved by inserting such sheets at several depths within polyethylene plate stacks were evaluated. The neutron fluence was monitored using an activation detector and 20-g on de Au foil samples with and without 0.5-mm-thick Cd foil. Each Au foil sample was pasted onto the center of a polyethylene plate and B-doped Al sheet, and the absolute activity of one Au foil sample was measured as a standard using a Ge detector. The resulting relative activities were obtained by calculating the ratio of the photostimulated luminescence of each foil sample to that of the standard Au foil. Results and Discussion: When the combination of a 4-cm-thick polyethylene plate and B-doped Al sheet was employed, the thermal neutron rate was reduced by 78%. Conclusion: The combination of a 4-cm-thick polyethylene plate and B-doped Al sheet effectively reduced the neutron activation of the investigated concrete wall.

• 한국진공학회지
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• 제6권1호
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• pp.50-60
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• 1997

순수한 $ZnAl_2S_4,;ZnAl_2Se_4,;CdAl_2S_4,;and;CdAl_2Se_4$ 및 cobalt와 erbium을 불순물로 첨가 한 이들 단결정을 화학수송법으로 성장시켰다. 성장된 단결정의 결정구조, 격자상수, 광학적 energy gap, photoluminescence 특성 등을 측정하여 광학적 전이 기구를 규명하였다.

• 한국세라믹학회지
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• 제37권2호
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• pp.117-121
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• 2000

Er-doped sodiumborosilicate glass films for waveguides amplifier were fabricated by Aerosol Flame Deposition(AFD) method. Al2O3 was added to sodium borosilicate glass films to suppress the formation of crystalline phase and control the refractive index. the formation of crystalline phase was suppressed above Al2O3 of 6 wt%. As the amount of Al2O3 increased from 2 to 12 wt% the refractive index of glass films increased lineary from 1.4595 up to 1.4710. After the core of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3＋8wt%Er2O3 was coated on the buffer layer of 77SiO2-15B2O3-8Na2O＋6 wt%Al2O3, the core was etched by reactive ion etching. The absorption spectrum of 3 cm waveguide amplifier showed two peaks of 1530 and 1550 nm.

• Corrosion Science and Technology
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• 제7권4호
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• pp.233-236
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• 2008

Halide-activated pack cementation was utilized to deposit B-doped silicide coating. The pack powders were consisted of $3Wt.c/oNH_4Cl$, 7Wt.c/oSi, $90Wt.c/oAl_2O_3+TiB_2$. B-doped silicide coating was consisted of two layers, an outer layer of $NbSi_2$ and an inner layer of $Nb_5Si_3$. Isothermal oxidation resistance of B-doped silicide coating was tested at $1250^{\circ}C$ in static air. B-doped silicide coating had excellent oxidation resistance, because continuous $SiO_2$ scale which serves as obstacle of oxygen diffusion was formed after oxidation.

• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.96-100
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• 2008

The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

• 한국진공학회지
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• 제19권3호
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• pp.206-210
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• 2010

RF 마그네트론 스퍼터링법을 이용하여 Al 도핑된 ZnO 박막을 Ar 유량에 따라 증착하고 박막의 다양한 특성을 연구하였다. ZnO 박막의 Ar 유량 변화를 통해 고품질 박막을 증착할 수 있었고 Al 도핑된 ZnO 박막에 대한 Ar 유량의 영향을 확인하였다. 모든 Al 도핑된 ZnO에서 80% 이상의 좋은 투과도를 보였다. Hall 측정과 X-ray photoelectron spectrometer 측정 결과, 비저항이 가장 작은 60 sccm에서 가장 작은 Al 도핑 농도를 보였다. Ar 유량에 따른 Al 도핑된 ZnO 박막에서의 전기적인 특성은 Al 도핑 농도보다 산소 공공에 의해 더 영향을 받음을 확인하였다.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.1-4
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• 2010

First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of AlN doped with a Cu concentration of 6.25%-18.75%. The ferromagnetic state is more energetically favorable state than the antiferromagnetic state or the nonmagnetic state. For $Al_{0.9375}Cu_{0.0625}N$, a global magnetic moment of 1.26 mB per supercell, with a localized magnetic moment of 0.75 $m_B$ per Cu atom is found. The magnetic moment is reduced due to an increase in the number of Cu atoms occupying adjacent cation lattice position. For $Al_{0.8125}Cu_{0.1875}N$, the magnetism of the supercell disappears by the interaction of the neighboring Cu atoms. The nonmagnetic to ferromagnetic phase transition is found to occur at this Cu concentration. The range of concentrations that are spin-polarized should be restricted within very narrow.

• 한국결정성장학회지
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• 제18권6호
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• pp.248-252
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• 2008

전기전도성이 우수하면서 입자 크기가 작은 $LiFePO_4$ 분말을 얻기 위해서, 이종원소(Cr+B 또는 Cr+Al) 도핑이 $LiFePO_4$의 전기전도도에 미치는 영향과 열처리 조건이 입자 크기에 미치는 영향에 대해서 조사하였다. 조성이 $LiFe_{0.965}Cr_{0.03}B_{0.005}PO_4$ and $LiFe_{0.065}Cr_{0.03}Al_{0.005}PO_4$인 두 종류의 분말을 기계화학적 밀링법으로 혼합 후 $675{\sim}759^{\circ}C$에서 $5{\sim}10$시간 열처리하여 합성하였다. 이종원소 도핑은 입자성장을 촉진하였고 전기전도도를 높이는 효과가 있었다. $LiFe_{0.065}Cr_{0.03}Al_{0.005}PO_4$의 전기전도도는 $1{\times}10^{-8}S/cm$로 도핑하지 않은 것의 $5{\times}10^{-10}S/cm$보다 높았다.

• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.