• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.169-175
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• 2014

Digital ink-jet printing system has many advantages such as fast and fine printing of various images, high efficiency and low cost process. Generally digital ink-jet printing requires ceramic pigments of cyan, magenta, yellow and black with thermal and glaze stability above $1000^{\circ}C$ for the application of porcelain product design. In this study, pink-red colored $CaO-SnO_2-Cr_2O_3-SiO_2$ pigment was synthesized using solid state reaction. The synthesis conditions of $Ca(Cr,Sn)SiO_5$ pigment such as annealing temperature, amount of mineralizer and non-stoichiometric composition were optimized. Crystal structure and morphology of the obtained $Ca(Cr,Sn)SiO_5$ pigment were analyzed using XRD, SEM, PSA, FT-IR and effect of Cr substitution on the pigment color was analyzed using Uv-vis. spectrophotometer and CIE $L^*a^*b^*$ measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.204-205
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• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Journal of the Mineralogical Society of Korea
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• v.18 no.1
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• pp.33-43
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• 2005

Three types of clinopyroxenes in alkali basaltic rocks from Jeju Island can be identified on the basis of geochemical and textural data. Type Ⅰ is Cr-rich diopside in spinel peridotites from the upper mantle. Type Ⅱ is augite in fine-grained pyroxenites which are possibly either magmatic vein or metamorphic segregations owing to anatexis of the upper mantle. The augite of Type Ⅱ contains high Ca and Mg and relatively low Ti. Type Ⅲ is thought to be either cumulates or cognate phenocrysts and can be subdivided into Ⅲa, Ⅲb, and Ⅲc based on their occurrence mode. Clinopyroxenes of Type Ⅰ have the highest Mg# and Si and the lowest Ti, whereas those of Type Ⅲhave lower Mg#와 Si and higher Ti. These geochemical characteristics indicate that (Ti+Al/sup Ⅵ/)/Si and Al/sup Ⅵ//Al/sup Ⅵ/ increase from Type Ⅰ to Type Ⅲ. It is possibly interpreted that Type Ⅰ is of the highest pressure origin and Type Ⅲ of the lowest. Fractionation of high-pressure clinopyroxenes would result in evolved undersaturated alkali-enriched liquids, probably producing the alkali-enriched host basaltic rocks in Jeju Island.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1456-1458
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• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.428-433
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• 2000

The consolidation behavior of multicomponent particles prepared by the flame hydrolysis deposition process is examined to identify the effects of Si substrate temperature. To fabricate multi-component particles, a vapor-phase ternary mixture of $SiCl_4(100 cc/min),\;BCl_3(30cc/min)\;and\;POCl_3,(5cc/min)$ was fed into a coflow diffusion oxy-hydrogen flame burner. The doped silica soot bodies were deposited on silicon substrates under various deposition conditions. The surface temperature of the substrate was measured by an infrared thermometer. Changes in the chemical states of the doped silica soot bodies were examined by FT-IR(Fourier-transformed infrared spectroscopy). The deposited particles on the substrate were heated at $1300^{\circ}C$ for 3h in a furnace at a heating rate of 10K/min. Si-O-B bending peak has been found when surface temperature exceeds $720^{\circ}C$. Correspondingly, the case with substrate temperatures above loot produced good consolidation result.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.236-236
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• 2011

Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.505-509
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• 2009

In this study, bulk nano-crystalline $Si_3N_4$ ceramics were fabricated by spark plasma sintering (SPS) and their mechanical properties, in particular wear, were investigated. A wide range of grain sizes, from 80 nm and 250 nm were obtained by varying sintering conditions ($1550^{\circ}C$-5 min to $1650^{\circ}C$-20 min). The elastic modulus of obtained ceramics was ${\sim}250$ GPa and hardness was in the range of $13{\sim}14$ GPa. The indentation fracture toughness increased from $2.58MPa{\cdot}m^{1/2}$ to $3.24MPa{\cdot}m^{1/2}$ with increasing sintering temperature possibly due to the elongated grains. Sliding wear tests revealed at least an order magnitude improvement in wear resistance with grain refinement. Microstructure analysis indicated that nano-$Si_3N_4$ specimens worn mainly through delamination and microcracking, while that of coarser specimens revealed severe wear with grain debonding and fracture.

• Journal of electromagnetic engineering and science
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• v.4 no.3
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• pp.137-142
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• 2004

In this paper, we present a new current-current negative feedback(CCNF) differential voltage-controlled oscillator (VCO) with 1/f induced low-frequency noise suppressed. By means of the CCNF, the 1/f induced low-frequency noise is removed from the proposed CCNF VCO. Also, high-frequency noise is stopped from being down-converted into phase noise by means of the increased output impedance through the CCNF and the feedback capacitor $C_f. The proposed CCNF VCO represents 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed CCNF VCO is measured as - 87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed CCNF VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of - 12 dBm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.472-476
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• 1998

The surface reactions of silica film($SiO_2-P_2O_5-B_2O_3-GeO_2$) with fluorocarbon plasma has been studied by using angle -resolved x-ray photoelectron spectroscopy(XPS). It has been confirmed that residual carbon consists of C-C and C-CFx bonds and fluorine mainly binds silicon in the case of etched silica by using $CF_4$ gas plasma. The surface reaction of silica with various fluorocarbon gases, such as $CF_4,C_2F_6 and CHF_3$ were investigated. XPS results showed that though the etching gases were changed, the elements and binding states of the residual layers on the etched silica by using various fluorocarbon gas plasma were nearly the same . This seems to be due to the high volatility of byproducts, that is, $SiF_4 and CO_2$ etc..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.