• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.279-282
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• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.336-346
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• 1994

We studied the reaction between silicon and carbon. Silicon granules and silicon with 0.2 wt% carbon powders were prepared for sample and then they were heated up to the $1450^{\circ}C, 1550^{\circ}C, 1650^{\circ}C, 1700^{\circ}C$ and were dwelled 1 hr and 4 hrs, respectively. we studied the change of morphologies of molten silicon and the formation of SiC following the reaction withcarbon using optical microscope, SEM, and XRD. Above the melting point of silicon, oxygens are precipitated during the decomposition of quartz used crucible. SiO formed from the reaction between molten silicon and precipitated oxygen evaporated and made the surface defects. SiC were formed with the reaction between the unreacted carbon and molten silicon. Polytype of the SiC formed at the solidification interface was ${\alpha}-SiC$.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• Journal of Powder Materials
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• v.3 no.3
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• pp.167-173
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• 1996

The effect of ball milling on the pressureless sintering of MoSi$_2$ was investigated. Ball milling was conducted at 70 rpm for 72 hours using different balls and vessels: one used tungsten carbide balls in a plastic vessel(referred as B-powder) and the other stainless steel ball in a stainless steel vessel(referred as C- powder). The powder was compacted with 173MPa and subsequently sintered at the temperature range of 1150 $^{\circ}C$ and 1450 $^{\circ}C$ in H$_2$, atmosphere. Sintered density was measured and scanning electron micrograph was observed. Over 90% of the theoretical density was attained at 1250 $^{\circ}C$ within 10 minutes for C-powders, while the similar densification required a sintering temperature of 1450 $^{\circ}C$ for B-powders. Such a difference in sinterability between B and C-powders was discussed in terms of the effect of particle size reduction and activated sintering caused by Ni and/or Fe introduced during ball milling.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.41-47
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• 1999

Ion implanted GaAs MESFET with low resistive layer was fabricated using Si diffusion into GaAs from SiN. During the thermal annealing at 95$0^{\circ}C$ for 30s, Si diffused into ion implanted region of GaAs from SiN and they formed low resistive layer of 350$\AA$ thickness. The diffusion of Si decreased the sheet resistance of source and drain region from 1000$\Omega$/sq. to 400$\Omega$/sq. and the AuGe/Ni/Au ohmic contact resitivity from 2.5$\times$10sub -6$\Omega$-cmsup 2 to $1.5\times$10sup -6$\Omega$-cmsup 2. The fabricated lum gate length MESFET with Si diffused surface layer shows the transconductance of 360ms/mm, 8.5dB of associated gain and 3.57dB of minimum noise figure at 12GHz. These performances are better than that of MESFET without Si diffused layer.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.785-790
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• 1992

A study of the pack cemcented SiC coating on graphite was performed and the process conditions were evaluated by means of experimental design. The content of Si, P2O5, B and Al2O3 reaction temperature, reaction time and acid treatment wast tested as the experimental variables. The results were analyzed and compared by the characteristic value of 10% weight loss by oxidation. The acid treatment exhibited the most effective anti-oxidation property and the optimum conditions were the powder composition of 20% Si, 3% B and 77% SiC, the reaction temperature of 1550$^{\circ}C$ for 7 hours with phosphoric acid treatment. The pack coating performed under this condition improved the 10% weight loss oxidation temperature by 514$^{\circ}C$ compared to the bare graphite.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.59.1-59.1
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• 2011

Ni기 초내열합금을 사용하는 터빈엔진의 효율향상 및 다양한 초고온함금에 대한 관심이 높아지면서, 이를 대체할 수 있는 초고온합금으로 Mo기지 복합재료에 대한 연구가 활발히 진행되고 있는 가운데 실질적으로 Mo 합금은 취약한 산화성으로 인하여 내산화성이 문제가 되고 있다. Mo-Si-B합금이 초고온에 노출될 경우 산화물의 점도가 매우 낮아 산화층을 형성하기 곤란하고, 저온에서는 산화층이 합금을 보호하지 못한다고 알려져 있다. 따라서, 본 연구에서는 Mo-Si-B 합금기지에 Si 확산코팅을 수행하여 내산화성을 높이고자 하였다. $1,100^{\circ}C$와 $800^{\circ}C$의 온도에서 시간에 따른 코팅 층의 두께 및 성장거동을 속도론적으로 고찰하였고, 내산화성을 평가하였다. 코팅된 시험편의 XRD 및 SEM 분석 및 무게측정 결과 내산화성이 크게 개선된 것으로 나타났으며, 내산화성에 대한 기구를 고찰하였다.

• Journal of the Korean Magnetics Society
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• v.26 no.1
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• pp.7-12
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• 2016

Effects of annealing of the gas-atomized Fe-9%Si-2%Cr powder which is suitable for high frequency application in mobile devices because of its high electrical resistivity were studied with an emphasis on the order-disorder phase transition. The formation of B2 ordered phase could not be suppressed during atomization process. When the powder was annealed at a temperature higher than $550^{\circ}C$ the peak diffracted from $DO_3$ phase could be detected. With increasing annealing temperature lattice parameter and coercivity decreased. An interesting phenomenon was an abrupt increment of coercivity in the powder annealed at $450^{\circ}C$. Highest permeability could be shown in the powder annealed at a relative low temperature of $150^{\circ}C$ and then the permeability decreased with annealing temperature. The above-mentioned results could be successfully explained by both the formation of $DO_3$ ordered phases and the change of electrical resistivity of the Fe-Si-Cr powder which was also originated from the phase transition.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.98-110
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• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.