• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.68-72
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• 1997

In this paper, to obtain the YbB $a_2$C $u_3$ $O_{x}$ superconductor, the mixed Powders of Y $b_2$ $O_3$, BaC $O_3$, CuO and Y $b_2$BaCu $O_{5}$, BaCu $O_2$ were used and the various calcining conditions were applied for the 123 phase of YbB $a_2$C $u_3$ $O_{x}$. Samples were prepared by the mixed oxide method and calcined with various temperatures of 88$0^{\circ}C$ ~91$0^{\circ}C$ . It was observed that the distribution of YbB $a_2$C $u_3$ $O_{x}$ phase which was calcined at 90$0^{\circ}C$ for 12 hours and 99 hours. But the result of long time calcination(99 hrs), the 123 phase of YbB $a_2$C $u_3$ $O_{x}$ was existed between 89$0^{\circ}C$ and 91$0^{\circ}C$ . And the best case could be obtained at the calcination temp. of 90$0^{\circ}C$ from the mixed Powder of YbB $a_2$C $u_3$ $O_{5}$ and Bacu $O_2$ which were prepared individually.idually.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.693-698
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• 1998

The effects of $AI_{2}$$O_{3}$ and the ratio of $Na_2O/B_2O_3$ on the phase separation and optical properties of sodium borosilicate glass film fabricated by AFD(Aerosol Flame Deposition) were investigated. When AI,O, of 6wt% was added to $66SiO_2-27B_2O_3-7Na_2O$ the clear glass film without any crystallization was produced under air-quenching condition after consolidation. As the amount of $AI_{2}$$O_{3}$ increased from 1.5 to 6.0 wt% the refractive index linearly increased from 1.4610 to 1.4701, and the difference of TE and TM mode causing by residual stress in film increased gradually. However, the difference of TE and TM mode to reveal birefringence could be minimized by annealing below the glass transition temperature after consolidation and air quenching. On the other hand. as the ratio of $Na_2O/B_2O_3$ increased the refractive index and birefringence of glass film tended to increase, but the measurement of their values were not available at over the critical ratio of $Na_2O/B_2O_3$, because of the cloudiness due to crystallization. The phase separation was greatly accelerated with increasing the ratio of $Na_2O/B_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.563-566
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• 2000

The effect of CuO and CuO-B $i_2$ $O_3$ additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$were investigated to decrease the sintering temperature for usage of Low Temperature Co-firing Ceramics (LTCC). The (P $b_{0.45}$C $a_{0.55}$)[F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$ceramics was sintered at 11$65^{\circ}C$. In order to decrease the sintering temperature, CuO and Cuo-B $i_2$ $O_3$ were added in the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$. For the addition of 0.4 wt.% CuO, the sintered density and the dielectric constant of the ceramics were revealed the maximum values of the 6.06g/c $m^2$ and 83 respectively and temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. As increasing B $i_2$ $O_3$to the (Pb,Ca)[(Fe,Nb)Sn] $O_3$ with CuO-B $i_2$ $O_3$with 0.2 wt.% CuO, the sintered density, the $\varepsilon$$_{r}$ and the Q was decreased, and $\tau$$_{f}$ was minimized at 0.2 wt.% CuO, and 0.2 wt.% B $i_2$ $O_3$. For this composition, dielectric properties were $\varepsilon$$_{r}$ of 81, Q. $f_{0}$ of 4400 GHz, and $\tau$$_{f}$ of 5 ppm/$^{\circ}C$ at sintering temperature of 100$0^{\circ}C$. the relationship between the microstructure and properties of ceramics was studied by X-ray diffraction(XRD), scanning electron microscopy(SEM).copy(SEM).oscopy(SEM).copy(SEM).EM).

• 전자공학회논문지 IE
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• v.43 no.4
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• pp.8-12
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• 2006

In this paper, reflectance and the dielectric characteristics for $P_2O_5$-ZnO-BaO system and $SiO_2-ZnO-B_2O_3$ system have been investigated as a function of contents of $TiO_2$. The reflectance was decreased with increasing the contents of $TiO_2$ contents, and the reflectance of $P_2O_5$-ZnO-BaO system was lowered than that of $SiO_2-ZnO-B_2O_3$ system. The dielectric constant of $P_2O_5$-ZnO-BaO system was higher than $SiO_2-ZnO-B_2O_3$ system, and the dielectric constant in the both system was increased with increasing of $TiO_2$ contents. This can explained as the space charge effects. These results are could be applied to the lower dielectrics layer of PDP required high reflective ratio and breakdown strength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.91-91
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• 2008

$SnO_2-B_2O_3-P_2O_5$ system were prepared by melt-quenching technique in the compositional series containing 50, 55 aod 60mol.% of $SnO_2$. A large glass-forming region was found at the phosphate side of the ternary system with homogeneous glasses containing up to 5-25mol.% of $B_2O_3$. For these glasses, thermal expansion coeffient($\alpha$), glass transition temperature(Tg), and glass softening temperature(Ts), were determined. The values a decrease with increasing $B_2O_3$ content, while Tg and Ts increased. The reason for the observed changes is local structure of the glasses. Local structure of the glasses was investigated by Raman and FT-IR measurements, suggesting that the number of bridging oxygens decreased whereas the non-bridging oxygen concentration increased with increasing $SnO_2$ content in the glasses.

• Microbiology and Biotechnology Letters
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• v.27 no.5
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• pp.419-425
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• 1999

Prophylactic effects of Bifidobacterium longum HY8001, Korean isolate, against Escherichia coli O157:H7 and Salmonella typhimurium DT104 enteric infection were examined at four groups of specific pathogen free(SPF)-ICR mouse for each pathogen. B. longum HY8001+B. typhimurium DT104+B. longum HY8001(BL+ST+BL) group and B. longum HY8001+E. coli O157:H7+B. longum HY8001(BL+E+BL) group were fed with B. longum HY8001 before and after E. coli O157:H7 or s. typhimurium DT104 challenge, while B. longum HY8001+S. typhimurium DT104(BL+ST) and B. longum HY8001+e. coli O157:H7(BL+E) groups were fed with B. longum HY8001 only before E. coli O157:H7 or S. typhimurium DT104 challenge. E. coli O157:H7(E) and S. typhimurium DT104(ST) groups were challenged with each pathogen without B. longum HY8001 administration and control groups were administered with phosphate buffered solution(PBS). After the oral administration with B. longum HY8001(109cfu), th emice were challenged with E. coli O157:H7(2$\times$1010cfu) or S. typhimurium DT104(108cfu) and the mortality rate and the fecal shedding of challenged pathogen were also examined define the reactivity of the B. longum HY8001. Production of toxin neutralizing substance(s) of B. longum HY8001 was determined by cell cytotoxicity assay using Vero cells. Fecal shedding of th eS. typhimurium DT104 was significantly decreased in BL+ST+BL group fed with B. longum HY8--1 before and after challenge(p<0.05), while the fecal shedding s of S. typhimurium DT104 in BL+ST and St groups remained more than 106cfu. the protective effect of the B. longum HY8001 against E. coli O157:H7 was significantly high only in BL+E+BL group fed with b. longum Hy8001 before and after E. coli O157:H7 challenge from the result of fecal E. coli O157:H7 isolation rate, mortality rate, and intestinal contents culture to detect E. coli O157:H7. the mortality rate of the BL+e and E groups. The cytopathic effect (CPE) of the Vero cytotoxin (Shiga like toxin I & II) in Vero cell was neutralized in B. longum HY8001 culture supernatant added wells which indicate the presence of soluble Vero cytotxin neutralizing substance(s) in B. longum HY8001 culture suprnatant.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.50-56
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• 2011

In this study, the effects of ZnO buffer layer thickness and annealing temperature on the heterojunction diode, ZnO/b-ZnO/p-Si(111), were reported. The effects of those on the structural and electrical properties of zinc oxide (ZnO) films on ZnO buffered p-Si (111) substrate were also studied. Structural properties of ZnO thin films were studied by X-ray diffraction and I-V characteristics were measured by a semiconductor parameter analyzer. ZnO thin films with 70 nm thick buffer layer and annealing temperature of $700^{\circ}C$ showed the best c-axis preferred orientation. The best electrical property was found at the condition of buffer layer annealing temperature of $700^{\circ}C$ and 50nm thick ZnO buffer layer (resistivity: $2.58{\times}10^{-4}[{\Omega}-cm]$, carrier concentration: $1.16{\times}1020[cm^{-3}]$). The I-V characteristics for ZnO/b-ZnO/p-Si(111) heterojunction diode were improved with increasing buffer layer thickness at buffer layer annealing temperature of $700^{\circ}C$.

• Korean Journal of Agricultural Science
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• v.11 no.1
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• pp.176-181
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• 1984

Linear free energy relation ship(LFER) on the insecticidal activity of O,O-diethylphenylphosphate (A) and 3,5-dimethylphenyl-O,O-diethylphosphate (B) derivatives were studied by EHT MO calculation method and regression analysis method. LFER between varying substituent constants and $pI_{50}$ constants of phosphates, (A) & (B) were calculated with applying Hammett, Okamoto-Brown, Taft and Swain-Lupton's DSP equations;percent resonance effect(R) and field effect(F) of (A) were %R=33.5 & %F=66.5 and also that of (B) were %R=2 & %F=98, respectively. On the basis of above findings, the insecticidal activities were similar for both (A) and (B), but (B) have larger field and inductive contribution than (A), due to the 3,5-dimethyl group of (B).

• Journal of the Korean Ceramic Society
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• v.30 no.5
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• pp.373-380
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• 1993

Li2O-B2O3-P2O5 glasses with high lithium content were analysed by electrical characterization. The electrical conductivity increase with Li content and exhibits a maximum value of 1.2$\times$10-4S/cm near B2O3/P2O5=1 at 15$0^{\circ}C$. Glass transitiion temperature increased with conductivity. Concentration of charge carrier and distribution of relaxation time were independent of temperature. In this system the variation of conductivity with the composition was depend on mobility of lithium ion. Basically, it is attribute to primitive activation energy. Enhancement of conductivities was related to be formation of (B-O-P)-, di-, and metaborate group, which give additional available sites for Li+ diffusion.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.207-213
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• 1993

Pb(Z $r_{0.54}$, $Ti_{0.46}$) $O_{3}$에 B $i_{2}$ $O_{3}$를 0.0wt%까지 첨가하여 미세구조, 유전, 압전, 성질에 미치는 영향을 고찰하였다. B $i_{2}$ $O_{3}$의 고용범위는 약 0.5~0.7wt%정도 이었고 B $i_{2}$ $O_{3}$ 첨가량이 증가함에 따라서 결정립의 크기가 감소하였다. B $i_{2}$ $O_{3}$첨가량이 증가함에 따라 고용한계까지는 $d_{33}$ , tan .delta., .xi.$_{r}$(분극후)값이 증가하였으며 Qm값과 밀도는 감소하였다. $K_{p}$ 값은 B $i^{3+}$ 가 P $b^{2+}$를 치환하므로 형성되는 Pb공공의 형성에 의해 자발분극이 증가됨에 따라 증가하였다.다.