• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.60-63
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• 2006

Preparing AZO thin films on the polymer substrate has been widely studied Because AZO thin film has the potential applications. In this study, we prepared AZO thin films on polyethersulfon (PES) at room temperature. The AZO thin films were prepared at $O_2$ gas flow rate of 0.05 and sputtering power of 100W with different film thickness by facing targets sputtering method. The electrical, optical and crystallographic properties of AZO thin films were measured by Hall Effect measurement system, UV/VIS spectrometer, SEM and XRD. From the results, we obtained AZO thin films with a low resistivity, a transmittance of over 80% and c-axis preferred orientation.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1144-1148
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• 2006

We have investigated liquid crystal (LC) aligning capabilities and electro-optical (EO) characteristics of transparent electrodes as Al-doped ZnO (AZO) substituting indium tin oxide (ITO). The experiment results show that a uniform vertical LC alignment on AZO electrodes based on a rubbed polyimide (PI) surface were achieved. A high pretilt angle of about $88^{\circ}$ was obtained. EO performances of the VA cell on rubbed PI surfaces with AZO electrodes are almost the same as that of the VA cell with ITO electrodes. These results appeared that AZO electrodes as transparent electrodes of LCDs could substitute ITO electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.98-101
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• 2004

AZO(ZnO:Al) thin film were prepared by FTS(Facing Target Sputtering) system. Change the sputtering conditions, AZO thin film deposited the lower resistivity(<$10-4{\Omega}cm$) so it can use to be a display application electrode. In this study, the electrical and crystallographic effects of target type have been investigated. The crystal structure was studied by XRD and the resistivity of AZO thin film was obtained by the four-point probe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.82-83
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• 2008

AI doped ZnO (AZO) films, and intentionally Zn added AZO (ZAZO) films were prepared on Corning glass by rf magnetron sputtering, and the electrical, optical, and structural properties of the as-deposited films together with the air annealed films were investigated. The resistivity of the AZO films increased with increasing substrate temperature and having minimum resistivity at $150^{\circ}C$. At the high temperature, the ZAZO films showed improved electrical properties better than the AZO films due.to increase in both the carrier concentration and.the Hall mobility. Upon air annealing at $500^{\circ}C$, the resistivity of both AZO and ZAZO films increased substantially, but the relative amount of degradation was smaller for films deposited at $450^{\circ}C$ than the films deposited at $150^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.67-68
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• 2006

We prepared the AZO thin film with different $O_2$ gas flow rate. the AZO thin films were deposited on glass substrate at room temperature, working gas pressure of 1mTorr. the electrical, structural and optical properties of AZO thin films were investigated by using Hall Effect measurement system, X-ray Diffractometer (XRD) and UV-VIS spectrometer. From the results, we could obtain that AZO thin film with low resistivity of $8.5{\times}10^{-4}{\Omega}cm$ was exhibited in specific $O_2$ gas flow rate. Also, the transmittance of over 80% in visible range was observed in specific $O_2$ gas flow rate. In all of the AZO thin film with the transmittance of over 80%, diffraction peak of (002) direction was observed, while amorphous peak was observed in the AZO thin film with the low transmittance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1072-1076
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.97-98
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• 2007

DC magnetron sputtering법을 이용하여 다양한 $Al_2O_3:$ 함량비( 1, 2, 3 wt%)를 가진 고밀도 세라믹 타겟을 사용하여 기판온도 $RT{\sim}300^{\circ}C$에서 AZO박막을 제작하였다. $Al_2O_3:$함량 및 기판온도의 증가에 따라 AZO박막의 결정성은 향상됨을 확인할 수 있었다. 결과적으로 기판온도 $300^{\circ}C$에서 $Al_2O_3:$ 3 wt%를 함유한 AZO 타겟을 사용하여 증착한 AZO박막은 가시광 영역에서 85%이상의 높은 투과율과 $7.8{\times}10^{-4}{\Omega}cm$의 비저항 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.444-445
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• 2007

Aluminum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering system. An ultrathin layer of nickel oxide (NiO) was deposited on the AZO anode to enhance the hole injections in organic light-emitting diodes (OLED). The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.446-447
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• 2007

Aluminisum-doped zinc oxide (AZO) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with indium tin oxide (ITO). In our paper, AZO films have been deposited on glass (coming 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$, $800^{\circ}C$ for 2 hr with $N_2$ atmosphere, respectively. We investigated that the electric properties and qualitative analysis of AZO films, which measured using the methods of Hall effect, X-ray photoelectron spectroscopy (XPS).