• Journal of the Korean Applied Science and Technology
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• v.30 no.2
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• pp.290-296
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• 2013

We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.163-167
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• 1999

LiNbO$_3$films were prepared by an rf-magnetron sputtering technique using sintered target containing potassium. The potassium was included to help to fabricate stoichiometric LiNbO$_3$film. Structural and electrical properties of thin films was investigated as a function of deposition condition. Optimum sputtering conditions were rf power of 100W, working pressure of 1m Torr and substrate temperature of 58$0^{\circ}C$. The thin film was grown to (012) preferred orientation. The dielectric constant of the thin film LiNbo$_3$ fabricated under optimum condition was 55 at 1MHz. Average grain size is about 200$\AA$ and roughness of the film is small enough to apply to optic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.88-92
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• 2002

$Ba(Zn_{0.8}Co_{0.2})_{1/3}Ta_{2/3}O_3$ [BZCT(80/20)] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $1450{\sim}1550^{\circ}C$ for 5hr. in air. The structural properties of BZCT(80/20) ceramics were investigated as a function of sintering temperature. The BZCT(80/20) ceramics sintered at $1550^{\circ}C$ showed a polycrystalline complex perovskite structure without second phases and any unreacted materials. Increasing the sintering temperature, the bulk density and ordering were increased. The bulk density of the BZCT(80/20) ceramics sintered at $1550^{\circ}C$ was 7.50[$g/cm^2$]. Increasing the sintering temperature, the average grain size were increased and pore were decreased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.924-929
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• 2004

The microstructure, electrical and dielectric characteristics of $ZnO-{Pr}_6{O}_11-{CoO}-{Dy}_2{O}_3$-based varistors were investigated without and with various metal oxide additives(NiO, MgO, Cr$_2$O$_3$). The average grain size decreased in the range of 18.4 $\backsim$ 11.5 $\mu$m, in order of NiO\longrightarrowMgO\longrightarrow{Cr}_2{O}_3$ and the density decreased in the range of 5.62 \backsim 5.33 $g/{cm}^3$ in order of NiO\longrightarrowCr$_2$O$_3$\longrightarrowMgO. While, the nonlinear exponent increased In the range of 19.8$\backsim$67.4 in order of NiO\longrightarrowMgO\longrightarrow${Cr}_2{O}_3$ and the leakage current decreased in the range of 25.6 $\backsim$ 1.2 $\mu$A in order of NiO\longrightarrow${Cr}_2{O}_3$\longrightarrowMgO. Among all varistors, the Cr$_2$O$_3$-added varistor exhibited the highest nonlinearity, with a nonlinear exponent of 67.4 and a leakage current of 1.2 $\mu$A. Furthermore, this varistor exhibited the lowest dielectric dissipation factor of 0.0407.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.248-249
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• 2005

The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

• Journal of Powder Materials
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• v.9 no.1
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• pp.19-24
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• 2002

This paper reports the results of an investigation into the effect of Cu additions upon the nano-crystallization behaviour of an Al-Y-Ni alloy. 1 at.% Cu was added to a base alloy of Al/sub 88/Y₄Ni/sub 8/ either by substitution for Al to form Al/sub 87/Y₄Ni/sub 8/Cu₁, or by substitution for Ni to form Al/sub 88/Y₄Ni/sub 7/Cu₁. Consistent with previous findings in the literature, the substitution of Cu for Al was found to increase the thermal stability of the amorphous phase whereas the substitution of Cu for Ni was found to decrease its thermal stability. Comparing the microstructures of these alloys after heat treatment to produce equivalent volume fractions of Al nanocrystals showed average grain sizes of 14 nm, 12 nm and 9 nm for the alloys Al/sub 88/Y₄Ni/sub 8/, Al/sub 87/Y₄Ni/sub 8/Cu₁respectively. The effect of Cu in refining the size of the nanocrystals was attributed to enhanced nucleation increasing the number density of the nanocrystals, rather than diffusion limited or interface limited growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.94-95
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• 2004

Using the high-frequency induction heated combustion method, the simultaneous synthesis and densification of $WSi_2-xvol.%SiC$ (x=0, 10, 20, 30) composites was accomplished using elemental powders of W, Si and C. A complete synthesis and densification of the materials was achieved in one step within a duration of 2 min. The relative density of the composite was up to 97% for the applied pressure of 60MPa and the induced current. The average grain size of $WSi_2$ are 6.9, 6.1, and $5.0{\mu}m$, respectively. The hardness and the fracture toughness increases with increasing SiC content. The maximum values for the hardness and fracture toughness are $1840kg/mm^2\;and\;5.1MPa{\cdot}m^{1/2}\;at\;WSi_2-30vol.%SiC$.

• Journal of the Korean Ceramic Society
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• v.20 no.3
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• pp.193-198
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• 1983

This experiment has been carried out for the purpose of investigating the effect of $V_2O_5$ and $H_3BO_3$ additives on sintering of magnesium oxide over the temperature range of 1300-150$0^{\circ}C$ MgO powder has been obtained by calcin-ing extra reagent grade magnesium carbonate(basic) at 90$0^{\circ}C$ for 30 minutes. The specimens were prepared by compression with pressure of 700Kg/cm2 then fired at 1300-150$0^{\circ}C$ for 0-5hrs. Sintering behaviour and microstructure of fired specimens were examined. Densification rates obeyed the equation D=K 1n t+C. The ratio of density in case of addition of $V_2O_5$ to theoretical density of pure periclase was 95-99% Activation energy of densification in case of $V_2O_5$ addition was 30.15 Kcal/mole. The range of average grain size in case of addition of $V_2O_5$ was 40-50$\mu\textrm{m}$. $H_3BO_3$ addtivie had not an effect on densification of MgO.

• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.221-225
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• 2015

The sintering effect on the microstructure, electrical properties, and dielectric characteristics of ZnO-V₂O₅-MnO₂-Nb₂O₅-Dy₂O₃-based ceramics was investigated. With the increase of sintering temperature from 875 to 950℃, the density of the sintered pellets decreased from 5.57 to 5.45 g/cm³ and the average grain size increased from 4.3 to 10.9 μm. The breakdown field decreased noticeably from 6,095 to 996 V/cm with the increase of sintering temperature. The varistor ceramics sintered at 900℃ exhibited the best nonlinear properties: 39.2 in the nonlinear coefficient and 0.24 mA/cm² in the leakage current density. The dielectric constant increased sharply from 658.6 to 2,928.8 with the increase of sintering temperature. On the whole, the dissipation factor exhibited a fluctuation with the increase of the sintering temperature, and a minimum value of 0.284 at 900℃.