• 제목/요약/키워드: Automotive power device packaging

검색결과 5건 처리시간 0.019초

자동차용 파워 모듈 패키징의 은 소재를 이용한 접합 기술 (A Review of Ag Paste Bonding for Automotive Power Device Packaging)

  • 노명훈;;정재필
    • 마이크로전자및패키징학회지
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    • 제22권4호
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    • pp.15-23
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    • 2015
  • Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.

전기자동차 파워 인버터용 전력반도체 소자의 발전: SiC 및 GaN (Advances in Power Semiconductor Devices for Automotive Power Inverters: SiC and GaN)

  • 김동진;방정환;김민수
    • 마이크로전자및패키징학회지
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    • 제30권2호
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    • pp.43-51
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    • 2023
  • 본 논문에서는 전기차 전력변환 시스템의 근간이 되는 전력반도체 소자의 발전 방향과 차세대 전력반도체 소자인 wide bandgap (WBG)의 특징에 관해 소개하고자 한다. 현재까지의 주류인 Si insulated gate bipolar transistor (IGBT)의 특징에 관해 소개하고, 제조사 별 Si IGBT 개발 방향에 대해 다루었다. 또한 대표적인 WBG 전력반도체 소자인 SiC metal-oxide-semiconductor field-effect transistor (MOSFET)이 가지는 특징을 고찰하여 종래의 Si IGBT 소자 대비 SiC MOSFET이 가지는 효용 및 필요성에 대해 서술하였다. 또한 현 시점에서의 GaN 전력반도체 소자가 가지는 한계 및 그로 인해 전기자동차용 전력변환모듈 용으로 사용하기에 이슈인 점을 서술하였다.

전기자동차용 고신뢰성 파워모듈 패키징 기술 (Power Module Packaging Technology with Extended Reliability for Electric Vehicle Applications)

  • 윤정원;방정환;고용호;유세훈;김준기;이창우
    • 마이크로전자및패키징학회지
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    • 제21권4호
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    • pp.1-13
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    • 2014
  • The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

히트파이프를 적용한 LED조명용 핀확장형 냉각시스템 개발 (Development of Fin Expansion Type Cooling System using Heat Pipes for LED Lightings)

  • 정태성;강환국
    • 소성∙가공
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    • 제21권2호
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    • pp.131-137
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    • 2012
  • With the advantages of power savings, increased life expectancy and fast response time over traditional incandescent bulb, LEDs are increasingly used for many applications including automotive, aviation, display, and special lighting applications. Since the high heat generation of LED chips can reduce service life, degrade luminous efficiency, and cause variation of color temperature, many studies have been carried out on the optimization of LED packaging and heat sinks. In this study, a fin expansion type cooling device using heat pipe, instead of a solid aluminum heat sink, was designed for LED security lightings based on thermal resistance analysis. Numerical analysis and experimental validation were carried out to evaluate its cooling performance.

3-D Hetero-Integration Technologies for Multifunctional Convergence Systems

  • 이강욱
    • 마이크로전자및패키징학회지
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    • 제22권2호
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    • pp.11-19
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    • 2015
  • Since CMOS device scaling has stalled, three-dimensional (3-D) integration allows extending Moore's law to ever high density, higher functionality, higher performance, and more diversed materials and devices to be integrated with lower cost. 3-D integration has many benefits such as increased multi-functionality, increased performance, increased data bandwidth, reduced power, small form factor, reduced packaging volume, because it vertically stacks multiple materials, technologies, and functional components such as processor, memory, sensors, logic, analog, and power ICs into one stacked chip. Anticipated applications start with memory, handheld devices, and high-performance computers and especially extend to multifunctional convengence systems such as cloud networking for internet of things, exascale computing for big data server, electrical vehicle system for future automotive, radioactivity safety system, energy harvesting system and, wireless implantable medical system by flexible heterogeneous integrations involving CMOS, MEMS, sensors and photonic circuits. However, heterogeneous integration of different functional devices has many technical challenges owing to various types of size, thickness, and substrate of different functional devices, because they were fabricated by different technologies. This paper describes new 3-D heterogeneous integration technologies of chip self-assembling stacking and 3-D heterogeneous opto-electronics integration, backside TSV fabrication developed by Tohoku University for multifunctional convergence systems. The paper introduce a high speed sensing, highly parallel processing image sensor system comprising a 3-D stacked image sensor with extremely fast signal sensing and processing speed and a 3-D stacked microprocessor with a self-test and self-repair function for autonomous driving assist fabricated by 3-D heterogeneous integration technologies.