• 제목/요약/키워드: Automotive Semiconductor

검색결과 114건 처리시간 0.027초

마모가 SAW 모터 구동특성에 미치는 영향 (The Effect of Wear on the SAW Motor Driving Characteristics)

  • 문봉호
    • Tribology and Lubricants
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    • 제27권5호
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    • pp.249-255
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    • 2011
  • Recently the demand for a fast and precise actuator in semiconductor industries is growing larger. A SAW motor is now expected as a new friction-drive actuator to meet such demand. However, its friction and wear properties are almost unknown and its low stability and reliability still remain to be solved. In this research the tests of SAW motor were carried out and its durability was discussed. The effect of wear caused by friction on the driving force and driving speed were clarified.

Diagonally-reinforced Lane Detection Scheme for High-performance Advanced Driver Assistance Systems

  • Park, Mingu;Yoo, Kyoungho;Park, Yunho;Lee, Youngjoo
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권1호
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    • pp.79-85
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    • 2017
  • In this paper, several optimizations are proposed to enhance the quality of lane detection algorithms in automotive applications. Considering the diagonal directions of lanes, the proposed limited Hough transform newly introduces image-splitting and angle-limiting schemes that relax the number of possible angles at the line voting process. In addition, unnecessary edges along the horizontal and vertical directions are pre-defined and removed during the edge detection procedures, increasing the detecting accuracy remarkably. Simulation results shows that the proposed lane recognition algorithm achieves an accuracy of more than 90% and a computing speed of 92 frame/sec, which are superior to the results from the previous algorithms.

An efficient LIN MCU design for In-Vehicle Networks

  • Yeon, Kyu-Bong;Chong, Jong-Wha
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권5호
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    • pp.451-458
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    • 2013
  • This paper describes a design of LIN MCU using efficient memory accessing architecture which provides concurrent data and address fetch for faster communication. By using slew rate control it can reduce EMI emission while satisfying required communication specifications. To verify the efficiency of the LIN MCU, we developed a SoC and tested for several data packets. Measurements show that this LIN MCU improves network efficiency up to 17.19 % and response time up to 31.26 % for nominal cases. EMI radiation also can be reduced up to 10 dB.

파릴렌 게이트 절연층을 사용한 신축성 박박 트랜지스터의 제작 및 특성 (Fabrication and Characterizations of Stretchable Thin-Film Transistor using Parylene Gate Insulating Layer)

  • 정순원;류봉조;구경완
    • 전기학회논문지
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    • 제66권4호
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    • pp.721-726
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    • 2017
  • We fabricated stretchable thin-film transistors(TFTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and parylene gate insulator. The TFTs exhibited a field- effect mobility of $5cm^2V^{-1}s^{-1}$ and a current on/off ratio of $10^5$ at a relatively low operating voltage. Furthermore, the fabricated transistors showed no noticeable changes in their electrical performance for large strains of up to 50 %.

액상천이공정에 의한 PZTN의 저온소결에 관한 연구 (Low Temperature Sintering of PZTN by the Liquid Phase Transient Processing)

  • 김찬영
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권12호
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    • pp.593-598
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    • 2001
  • Transient liquid phase processing was investigated to decrease processing temperatures while maintaining useful piezoelectric properties in the lead zirconate titanate (PZT) system. Niobium oxide$(Nb_2O_5)$ modified crystalline PZT (PZTN) powder was combined with lead silicate $(PS; PbO-SiO_2)$ glass powder and crystalline titania, zirconia, and niobia. Firing above the melting temperature of the lead silicate $(PS; Tm \risingdotseq\; 714^{\circk}C)$ resulted in liquid phase densification of the PZTN followed by dissolution of the titania, zirconia, and niobia into the liquid phase, and crystallization of additional PZTN. The addition of crystalline titania, zirconia, and niobia to react with the lead oxide from the lead silicate phase resulted in an increase in the dielectric and Piezoelectric properties.

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고온 동작용 SiC CMOS 소자/공정 및 집적회로 기술동향 (Technology Trend of SiC CMOS Device/Process and Integrated Circuit for Extreme High-Temperature Applications)

  • 원종일;정동윤;조두형;장현규;박건식;김상기;박종문
    • 전자통신동향분석
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    • 제33권6호
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    • pp.1-11
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    • 2018
  • Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.

A Novel type of High-Frequency Transformer Linked Soft-Switching PWM DC-DC Power Converter for Large Current Applications

  • Morimoto Keiki;Ahmed Nabil A.;Lee Hyun-Woo;Nakaoka Mutsuo
    • Journal of Electrical Engineering and Technology
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    • 제1권2호
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    • pp.216-225
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    • 2006
  • This paper presents a new circuit topology of DC busline switch and snubbing capacitor-assisted full-bridge soft-switching PWM inverter type DC-DC power converter with a high frequency link for low voltage large current applications as DC feeding systems, telecommunication power plants, automotive DC bus converters, plasma generator, electro plating plants, fuel cell interfaced power conditioner and arc welding power supplies. The proposed power converter circuit is based upon a voltage source-fed H type full-bridge high frequency PWM inverter with a high frequency transformer link. The conventional type high frequency inverter circuit is modified by adding a single power semiconductor switching device in series with DC rail and snubbing lossless capacitor in parallel with the inverter bridge legs. All the active power switches in the full-bridge inverter arms and DC busline can achieve ZVS/ZVT turn-off and ZCS turn-on commutation operation. Therefore, the total switching losses at turn-off and turn-on switching transitions of these power semiconductor devices can be reduced even in the high switching frequency bands ranging from 20 kHz to 100 kHz. The switching frequency of this DC-DC power converter using IGBT power modules is selected to be 60 kHz. It is proved experimentally by the power loss analysis that the more the switching frequency increases, the more the proposed DC-DC converter can achieve high performance, lighter in weight, lower power losses and miniaturization in size as compared to the conventional hard switching one. The principle of operation, operation modes, practical and inherent effectiveness of this novel DC-DC power converter topology is proved for a low voltage and large current DC-DC power supplies of arc welder applications in industry.

MOCVD에 의한 InGaAs, InGaP 및 InGaAsP필름의 성장 및 조성변화에 대한 수치해석 연구 (A Numerical Study on the Growth and Composition of InGaAs, InGaP and InGaAsP Films Grown by MOCVD)

  • 임익태;김동석;김우승
    • 반도체디스플레이기술학회지
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    • 제4권1호
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    • pp.43-48
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    • 2005
  • Metaloganic chemical vapor deposition, also known as metalorganic vapor phase epitaxy has become one of the main techniques for growing thin, high purity films for compound semiconductors such as GaAs, InP, and InGaAsP. In this study, the distribution of growth rate and composition of InGaAsP, InGaP, and InGaAs films are studied using computational method. The influences of process parameters such as pressure, temperature and precursors' partial pressure on the growth rate and composition distributions are analyzed. The film growth rate is increased in the upstream part according to the increase of temperature but not in the downstream part. The Ga composition in InGaAsP film shows an asymptotic behavior for temperature variation but As composition varies significantly within the temperature range considered in the present study. The overall film growth rates of InGaP, InGaAs and InGaAsP are decreased with increasing the Ga/In ratios of the source gases. Pressure variation does not seem to be a significant parameter to the film growth. Film growth characteristics of tertiary films such as InGaP and InGaAs show similar trends to the quaternary film, InGaAsP.

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지능적인 이형부품 인식과 비전 정렬 방법에 관한 연구 (A Study on the Intelligent Recognition of a Various Electronic Components and Alignment Method with Vision)

  • 신균섭;김종원
    • 반도체디스플레이기술학회지
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    • 제23권2호
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    • pp.1-5
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    • 2024
  • In the electronics industry, a lot of research and development is being conducted on electronic component supply, component alignment and insertion, and automation of soldering on the back side of the PCB for automatic PCB assembly. Additionally, as the use of electronic components increases in the automotive component field, there is a growing need to automate the alignment and insertion of components with leads such as transistors, coils, and fuses on PCB. In response to these demands, the types of PCB and parts used have been more various, and as this industrial trend, the quantity and placement of automation equipment that supplies, aligns, inserts, and solders components has become important in PCB manufacturing plants. It is also necessary to reduce the pre-setting time before using each automation equipment. In this study, we propose a method in which a vision system recognizes the type of component and simultaneously corrects alignment errors during the process of aligning and inserting various types of electronic components. The proposed method is effective in manufacturing various types of PCBs by minimizing the amount of automatic equipment inserted after alignment with the component supply device and omitting the preset process depending on the type of component supplied. Also the advantage of the proposed method is that the structure of the existing automatic insertion machine can be easily modified and utilized without major changes.

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데이터마이닝 기법의 생산공정데이터에의 적용 (Analyzing Production Data using Data Mining Techniques)

  • 이형욱;이근안;최석우;배기웅;배성민
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.143-146
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    • 2005
  • Many data mining techniques have been proved useful in revealing important patterns from large data sets. Especially, data mining techniques play an important role in a customer data analysis in a financial industry and an electronic commerce. Also, there are many data mining related research papers in a semiconductor industry and an automotive industry. In addition, data mining techniques are applied to the bioinformatics area. To satisfy customers' various requirements, each industry should develop new processes with more accurate production criteria. Also, they spend more money to guarantee their products' quality. In this manner, we apply data mining techniques to the production-related data such as a test data, a field claim data, and POP (point of production) data in the automotive parts industry. Data collection and transformation techniques should be applied to enhance the analysis results. Also, we classify various types of manufacturing processes and proposed an analysis scheme according to the type of manufacturing process. As a result, we could find inter- or intra-process relationships and critical features to monitor the current status of the each process. Finally, it helps an industry to raise their profit and reduce their failure cost.

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