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http://dx.doi.org/10.5370/KIEE.2017.66.4.721

Fabrication and Characterizations of Stretchable Thin-Film Transistor using Parylene Gate Insulating Layer  

Jung, Soon-Won (Industry and Academy Cooperation Foundation, Cheongju University)
Ryu, Bong-Jo (Dept. of Mechanical Engineering, Hanbat University)
Koo, Kyung-Wan (Dept. of ICT Automotive Engineering, Hoseo University)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.66, no.4, 2017 , pp. 721-726 More about this Journal
Abstract
We fabricated stretchable thin-film transistors(TFTs) on a polydimethylsiloxane substrate with patterned polyimide island structures by using an amorphous InGaZnO semiconductor and parylene gate insulator. The TFTs exhibited a field- effect mobility of $5cm^2V^{-1}s^{-1}$ and a current on/off ratio of $10^5$ at a relatively low operating voltage. Furthermore, the fabricated transistors showed no noticeable changes in their electrical performance for large strains of up to 50 %.
Keywords
Stretchable; Thin-film transistor; Parylene; Gate insulator; IGZO;
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