• Proceedings of the Korean Geotechical Society Conference
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• 2005.03a
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• pp.998-1004
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• 2005

U.J.S.(Ultra Jetting System) is a new ground improvement method registered as a Utility Model No.0205798, which has fundamentally improved the existing jetting method of J.S.P.(Jumbo Special Pattern System). In this study, the uniaxial compressive strengths of improved soil-grout structures by U.J.S. and J.S.P. which have been conducted on the construction site are compared. Also, the differences between the U.J.S. and J.S.P. are analyzed by considering the role of the auger bit, the injection distance measured from the axis of boring tubes, and angle of injection measured from the horizontal. The specimens of soil-grout structures are taken from the improved soils by using the U.J.S. and J.S.P. The uniaxial tests for the samples are conducted after the curing period of 28 days. The uniaxial compressive strengths and the coefficients of elasticity of surface and distance from the axis of boring. This study shows that the mean strength of the improved structure by J.S.P. is 1.9 times greater than by J.S.P.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.138-143
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• 1998

We have investigated the magnetic properties of FeBN and FeSiN films deposited by RF magnetron reactive sputtering system. It was investigated that the compositions of B, Si and N were the main factors influencing the soft magnetic properties and film resistivity. The addition of small amount of N significantly improve the soft magnetic properties and electrical resistivity. The FeBN and FeSiN films were showed good soft magnetic properties which were Hc<1 Oe, Bs:19~19 kG and $\mu$'>1000 values. The composition of films were $Fe_{75}(BN)_{25},\;Fe_{78}(SiN)_{22}$ and resistivity was 100~120 $\mu$$\Omega$-cm. but, futher increase in B, Si and N concentration degraded the soft magnetic properties due to formation of nitride such as $Fe_4N$ compound.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.444-445
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• 2007

IZO/Al multilayer anode films for flexible top emitting organic light emitting diodes (TOLEDs) were grown on PEN (polyethylen-enaphthelate) substrate using twin target sputter (TTS) system. To investigate electrical and optical properties of IZO/Al multilayer films, 4-point probe method and UV/Vis spectrometer were used, respectively. From a IZO/Al multilayer films with 100nm-thick Al, sheet resistance of $1.4{\Omega}/{\square}$ and reflectance of above 62% at a range of 500~550nm wavelength could be obtained, In addition, structural and surface properties of IZO/Al multilayer films were analyzed by XRD (X-ray diffraction) and FESEM (field emission scanning electron microscopy) and AES (auger electron spectroscope), respectively. Moreover, flexibility of IZO/Al multilayer anode films were examined by bending test method.

• Journal of the Korean Society of Mechanical Technology
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• v.13 no.1
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• pp.23-29
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• 2011

The measurement of ice properties such as thickness, strength are important to know the performance of the ice breaking vessel. The measuring equipment of ice properties and methods are summarized in this paper. The actual measured data are also described. The strength of ice at Svalbard area on April 2010 is much stronger than the Chukchi Sea on August 2010. The mean strength of Svalbard is about 500 kPa and one of Chukchi Sea is 250 kPa. The first sea trial in Arctic sea using Araon was carried out in the Chukchi Sea. The power and speed was also measured to check the ship performance in ice. The speed was measured from GPS(Global Positioning System) and engine power was recorded from DPS(Dynamic Positioning system) of Araon. The design target of Araon in level ice is 3 knots in 1m thickness and 630 kPa flexible strength but mean speed in Chuckchi sea is 3.98 knots when 6.6 MW engine power, 2.4m ice thickness and 250 kPa strength. This results comes from the difference of ice types and the weak flexible strength of ice but it will be a good information to know the performance of Araon in similar ice condition.

• Journal of Biosystems Engineering
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• v.13 no.3
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• pp.44-51
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• 1988

The objective of this study is to develop a grain handling system for loading, unloading and transporting of rough rice stored at the in-bin drying and storage (IBDS) developed by the Korea Advanced Institute of Science and Technology(KAIST). A mechanized Fain handling system consisted of a portable auger and a gate was developed and tested. The test results can be summarized as the following: 1) The loading capacity of the handling system developed is $16.2m^3/h$ (8.3 ton/h) for the Indica type rice and $13.0m^3/h$(7.3 ton/h) for the Japonica type. It is greater than that of manual handling as much as 2.5 - 2.7 times. 2) The unloading capacity of the handling system developed is $16.0m^3/h$(8.2 ton/h) for the Indica type rice and $12.6m^3/h$(7.0 ton/h) for the Japonica type. It is greater than that of the manual as much as 4.7 - 5.5 times. 3) For 3-ton capacity of the storage, the loading and unloading can be performed for 20 and 30 minutes by one man operation of equipment. while 60 and 120 minute for the manual of 2 men, respectively. 4) The volumetric efficiency of the system developed is 0.42 - 0.54 and the power efficiency is 4.0 - 4.4. 5) The break-even quantity of the handling system developed is about 38.6 ton($68.7m^3$) of rough rice and the initial investment for the system would be returned within five years for the most owners of the KAIST IBDS system.

• Journal of Animal Environmental Science
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• v.19 no.1
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• pp.9-18
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• 2013

Currently, there was no producing system of TMR for pig feeding in Korea. In this study, we examined unrolling, cutting, and softening for the round bale silage. We designed and developed the prototype system of round bale silage for pig feeding. Unroll method were lower chain conveying and upper belt conveying which includes an hydraulic vertical fodder knife. Gathering and cutting method were rotating auger and flywheel which have 10 cutters, input roller of 280 rpm, and cutter rotating speed of 1,750 rpm. Softening device was rotating hammer in inclined cylinder adjustable to $25^{\circ}C$ and rotating speed up to 1,300 rpm. The prototype system was integrated working for unrolling, cutting, and softening. We found that when the round bale silage in unrolling apparatus cut length of 20 cm to input cutting apparatus, the cutting performance was well in continuous working up to input rate of 1,000 kg/h, the softening apparatus was working well.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.157-157
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• 2015

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}g/m^2day$. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2day$) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study NBAS process was introduced to deposit enhanced film density single gas barrier layer with a low WVTR. Fig. 1. shows a schematic illustration of the NBAS apparatus. The NBAS process was used for the $Al_2O_3$ nano-crystal structure films deposition, as shown in Fig. 1. The NBAS system is based on the conventional RF magnetron sputtering and it has the electron cyclotron resonance (ECR) plasma source and metal reflector. $Ar^+$ ion in the ECR plasma can be accelerated into the plasma sheath between the plasma and metal reflector, which are then neutralized mainly by Auger neutralization. The neutral beam energy is controlled by the metal reflector bias. The controllable neutral beam energy can continuously change crystalline structures from an amorphous phase to nanocrystal phase of various grain sizes. The $Al_2O_3$ films can be high film density by controllable Auger neutral beam energy. we developed $Al_2O_3$ high dense barrier layer using NBAS process. We can verified that NBAS process effect can lead to formation of high density nano-crystal structure barrier layer. As a result, Fig. 2. shows that the NBAS processed $Al_2O_3$ high dense barrier layer shows excellent WVTR property as a under $2{\times}10^{-5}g/m^2day$ in the single barrier layer of 100nm thickness. Therefore, the NBAS processed $Al_2O_3$ high dense barrier layer is very suitable in the high efficiency OLED application.

• Elastomers and Composites
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• v.36 no.2
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• pp.111-120
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• 2001

Mechanical properties and their adhesion behavior with zinc- and brass-plated steel cords of natural rubber/acrylonitrile-butadiene blend compounds were investigated as a function of blend ratio. The Mooney viscosity and stress relaxation time were found to be lowered with increasing NBR content. Tensile modulus generally increased with increasing NBR content. Tensile stress at break stayed constant up to about 40 phr and showed minimum at $50{\sim}60 phr$, and thereafter increased with increasing NBR content. Strain at break decreased linearly below 50 phr, and above the level it showed nearly constant value. Based on the abrupt drops in elastic modulus and tan ${\delta}$ peak, the glass transition temperature of NR and NBR were found to be -55 and $-10^{\circ}C$, respectively. In the case of NR/NBR blend compounds, two distinct transition points were observed and each transition position was not affected by NBR level indicating an incompatible nature of NR/NBR blend system. The pullout force and rubber coverage decreased to the level of about 40% to that of pure m compound, when the 50 phr of NR was replaced by NBR. However, the pure NBR compound showed the comparable adhesion performance with NR(${\sim}90%$). The sulfur concentration was found to become lower with the increased NBR content at the adhesion interface based on the Auger spectrometer results, representing a lack of adhesion layer formation, and this was explained for a possible cause of low adhesion performance with adding NBR.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.828-834
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• 2001

Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.