• Journal of the Korean Vacuum Society
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• v.17 no.4
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• pp.311-316
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• 2008

Since the presence of the chemical impurities and defect at surfaces and interfaces greatly influence the properties of various semiconductor devices, an unambiguous chemical characterization of the metal and semiconductor surfaces become more important in the view of the miniaturization of the devices toward nano scale. Among the various conventional surface characterization tools, Electron-induced Auger Electron Spectroscopy (EAES), X-ray Photoelectron Spectroscopy (XPS) and Secondary Electron Ion Mass Spectroscopy (SIMS) are being used for the identification of the surface chemical impurities. Recently, a novel surface characterizaion technique, Positron-annihilation induced Auger Electron Spectroscopy (PAES) is introduced to provide a unique method for the analysis of the elemental composition of the top-most atomic layer. In PAES, monoenergetic positron of a few eV are implanted to the surface under study and these positrons become thermalized near the surface. A fraction of the thermalized positron trapped at the surface state annihilate with the neighboring core-level electrons, creating core-hole excitations, which initiate the Auger process with the emission of Auger electrons almost simultaneously with the emission of annihilating gamma-rays. The energy of electrons is generally determined by employing ExB energy selector, which shows a poor resolution of $6{\sim}10eV$. In this paper, time-of-flight system is employed to measure the electrons energy with an enhanced energy resolution. The experimental result is compared with simulation results in the case of both linear (with retarding tube) and reflected TOF systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.953-956
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• 2008

Using the theoretical model of Auger electron emission, effects of MgO properties which include band gap energy, escape probability, gas ion, and doping elements on the yield of secondary electron emission were examined. The results indicated that the band gap of MgO must be decreased and escape probability must be enhanced in order to increase the yield of secondary electrons from Xe ions and that may proved to be a critical for achieving high luminance efficacy in ac-PDPs.

• Journal of radiological science and technology
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• v.1 no.1
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• pp.31-35
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• 1978

X-rays contribute to electron emission from material surfaces primarily through photoelectric interaction. A simple model is described for predicting the yield and energy spectrum of photon and Auger electrons emitted from materials exposed to X-ray with low energy. In this paper, We have calculated the yield of primary, Auger, and secondary, electrons. The results of the photoelectric yield model developed here suggests that. I) The angular distribution of emitted electrons(Per unit angle) is proportional to $sin{\theta}\;cos{\theta}$ for all electron energies and all components(Primary, Auger, or Secondary) II) The shape of the energy spectrum of the photoelectric yield is independent of angle. III) For this targets the forward and backward photoelectric yields are indentical.

• Applied Microscopy
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• v.45 no.4
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• pp.214-217
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• 2015

This study introduces metal coating as an effective sample preparation method to remove charge-up caused by the shadow effect during field emission scanning electron microscope (FE-SEM) analysis of dynamic structured samples. During a FE-SEM analysis, charge-up occurs when the primary electrons (input electrons) that scan the specimens are not equal to the output electrons (secondary electrons, backscattered electrons, auger electrons, etc.) generated from the specimens. To remove charge-up, a metal layer of Pt, Au or Pd is applied on the surface of the sample. However, in some cases, charge-up still occurs due to the shadow effect. This study developed a coating method that effectively removes charge-up. By creating a converted sample stage capable of simultaneous tilt and rotation, the shadow effect was successfully removed, and image data without charge-up were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.403-403
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• 2008

This article reports changes in the mechanical properties of chromium steel after nitrogen implantation at high temperature. The samples are implanted with 120keV N-ion at doses ranging from $1\times1080$ to $4\times1080ions/cm^2$ and at substrate temperature ranging from 25 to $400^{\circ}C$. Nano-hardness and AES(Auger electrons spectroscopy) were measured from nitrogen ion implanted layer. The sliding wear and impact wear properties of the implanted samples were also measured. The results revealed that the hardness and mechanical properties of ion implanted samples depend strongly on the ion doses and implantation temperature. The hardness of the nitrogen implanted sample with 120keV, $4\times10^{18}ions/cm^2$, $335^{\circ}C$ was measured to be approximately 20 GPa, which is approximately 5 times higher than that of un-implanted sample (H=3.8 GPa). Also, the sliding wear and impact wear properties of nitrogen implanted samples were greatly improved. Detailed experiment results will be presented.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.50-50
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• 1994

Half-metallic Heusler alloys (NiMnSb, ppdMnSb, pptMnSb) have attracted much attention due to their unique electronic and magnetic structures. Sppin-ppolarized band structure calculation ppredicts metallic behavior for the majority sppin states and semiconductor behavior for the minority sppin states. We have studied the electronic structures of these half-metallic Heusler alloys by core-level pphotoemission sppectroscoppy of Mn 2pp and 3s XppS sppectra. We found large intensities of Mn 2pp satellites and 3s exchange spplitting comppared with other metal Mn-alloys. These satellite structure can be understood by applying Anderson imppurity model. This fact supports the calculated sppin pprojected ppartial density of states which suggests that the valence electrons be highly sppin ppolarized near Fermi level and that the electrons involved with charge-transfer be mainly minority sppin ones which have semiconducting band structure. The trend of charge transfer energies Δ from ligands (Sb 5pp) to Mn 3d, obtained from our model fitting, is consistent with that calculated from sppin pprojected ppartial density of state. Also the trend of d-d electron correlation energies U calculated from Mn Auger line L3 VV by Mg $K\alpha$ source is comppatible with that resulted from our model fitting. We fitted the Mn 3s curve in the same way as for insulating Mn comppounds by using the same pparameters calculated from Mn 2pp curve fitting exceppt for the Coulomb interaction energy Q between core hole and d-electrons. The 3s sppectra were analyzed by combing the charge transfer model and a simpple model taking into account the configuration mixing effect due to the intra-shell correlation. We found that the exchange interaction between 3s hole and 3d electrons is mainly respponsible for the satellite of Mn 3s sppectra. This is consistent with the neutron scattering data, which suggests local 3d magnetic moment. We find that the XppS analysis results of Mn 2pp and 3s satellite structures of half-metallic Heusler alloys are very similar to those of insulating transition metal comppounds.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.27-32
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• 2000

We have studied the carrier relaxation of InAs/GaAs modulation-doped quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-ressolved spectroscopy. At the excitation below GaAs barrier band gap, the relaxation processes become very slow, implying to observe the phonon bottleneck effects. On the other hand, at the excitation far above GaAs band gap, phonon bottleneck effects are broken down due to Auger processes. Increasing modulation-doping concentration, the relaxation times, by virtue of Coulomb scattering between electrons in GaAs doped layer and carriers in InAs quantum dots, are observed to become fast.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1751-1755
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• 2007

The interaction of ammonium hydroxide (NH4OH) with zircaloy-4 (Zry-4) was investigated using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) methods. In order to study the surface chemistry of NH4OH/Zry-4 system, the binding energies of N1s, O1s and Zr3d electrons were monitored. The N1s peak intensity was remarkably increased by following cycles of Ar+ sputtering of NH4OH dosed Zry-4 surface at room temperature. Because the nitrogen stayed under the subsurface region was diffused out onto the Zry-4 surface after oxygen concentration was decreased. These could be occurred after the surface oxygen was diffused into the bulk or desorbed out from the surface until Ar+ fluence was 6.0 × 1016 Ar+/cm2 then the surface was relatively atomic deficient state. The O1s peak intensity was decreased by stepwise Ar+ sputtering. After many cycles of Ar+ sputtering, the peak intensities of Zr3d peaks did not change much but the shape of the peak clearly did change. This implies that the oxidation state of zirconium was changed during stepwise Ar+ sputtering of NH4OH/Zry-4. The Zr3d peak intensity of zirconium nitride (ZrNx) increased as the intensity of N1s (from zirconium nitride) increased but the Zr3d peak intensity of zirconium oxide (ZrOx) decreased due to the depopulation of the oxygen species on the surface region. We also observed that the peak intensity of Zr4+ was nearly same after Ar+ sputtering processes but the peak intensity of metallic zirconium increased compared to that of before the sputtering process was performed.