• 제목/요약/키워드: Auger coefficient

검색결과 24건 처리시간 0.032초

Deep Learning-based Extraction of Auger and FCA Coefficients in 850 nm GaAs/AlGaAs Laser Diodes

  • Jung-Tack Yang;Hyewon Han;Woo-Young Choi
    • Current Optics and Photonics
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    • 제8권1호
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    • pp.80-85
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    • 2024
  • Numerical values of the Auger coefficient and the free carrier absorption (FCA) coefficient are extracted by applying deep neural networks (DNNs) to the L-I characteristics of 850 nm GaAs/AlGaAs laser diodes. Two elemental DNNs are used to extract each coefficient sequentially. The fidelity of the extracted values is established through meticulous correlation of L-I characteristics bridging the realms of simulations and measurements. The methodology presented in this paper offers a way to accurately extract the Auger and FCA coefficients, which were traditionally treated as fitting parameters. It is anticipated that this approach will be applicable to other types of opto-electronic devices as well.

열교환 부품용 발열체 형성기술 (The Formation Technique of Thin Film Heaters for Heat Transfer Components)

  • 조남인;김민철
    • 반도체디스플레이기술학회지
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    • 제2권4호
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    • pp.31-35
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    • 2003
  • We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

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Surface Modification of Aluminum by Nitrogen-Ion Implantation

  • Kang Hyuk-Jin;Ahn Sung-Hoon;Lee Jae-Sang;Lee Jae-Hyung
    • International Journal of Precision Engineering and Manufacturing
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    • 제7권1호
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    • pp.57-61
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    • 2006
  • The research on surface modification technology has been advanced to improve the properties of engineering materials. Ion implantation is a novel surface modification technology that enhances the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into AC7A aluminum substrates which would be used as molds for rubber molding. The composition of nitrogenion implanted aluminum and distribution of nitrogen ions were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimen was higher than that of untreated specimen. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that implantation of nitrogen ions enhances the mechanical properties of aluminum mold.

Measurement of Secondary Electron Emission Coefficient and Bimolecular Valence Band Energy Structure of Erythrocyte with and Without Bioplasma Treatment

  • Lee, Jin-Young;Baik, Guyon;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.483-483
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    • 2012
  • Recently, nonthermal bioplasma has been attracted by researchers due to their potentials to modulate cellular functions resulting in changes of biomolecular electron band structures as well as cell morphologies. We have investigated the secondary electron emission characteristics from the surface of the erythrocyte, i.e., red blood cell (RBC) with and without the nonthermal bioplasma treatment in morphological and biomolecular aspects. The morphologies have been controlled by osmotic pressure and biomolecular structures were changed by well known reactive oxygen species. Ion-induced secondary electron emission coefficient have been measured by using gamma-focused ion beam (${\gamma}$-FIB) system, based on the quantum mechanical Auger neutralization theory. Our result suggests that the nonthermal bioplasma treatment on biological cells could result in change of the secondary electron emission coefficient characterizing the biomolecular valence band electron energy structures caused by the cell morphologies as well as its surface charge distributions.

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The Properties of Boron-doped Zinc Oxide Film Deposited according to Oxygen Flow Rate

  • Kim, Dong-Hae;Son, Chan-Hee;Yun, Myoung-Soo;Lee, Jin-Young;Jo, Tae-Hoon;Seo, Il-Won;Jo, I-Hyun;Roh, Jun-Hyung;Choi, Eun-Ha;Uhm, Han-Sup;Kwon, Gi-Chung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.358-358
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    • 2012
  • The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

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Tribological Properties of Sputtered Boron Carbide Coating and the Effect of ${CH}_4$ Reactive Component of Processing Gas

  • Cuong, Pham-Duc;Ahn, Hyo-Sok;Kim, Jong-Hee;Shin, Kyung-Ho
    • KSTLE International Journal
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    • 제4권2호
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    • pp.56-59
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    • 2003
  • Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a ${B}_4$C target with Ar as processing gas. Various amounts of methane gas (${CH}_4$) were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that ${CH}_4$addition to Ar processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of ${CH}_4$gas component from 0 to 1.2 vol %. By adding a sufficient amount of ${CH}_4$(1.2 %) in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

Tribological properties of sputtered boron carbide coating and the effect of $CH_4$ reactive component of processing gas

  • Cuong Pham Duc;Ahn Hyo-Sok;Kim Jong-Hee;Shin Kyung-Ho
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2003년도 학술대회지
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    • pp.78-84
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    • 2003
  • Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a $B_4C$ target with As as processing gas. Various amounts of methane gas $(CH_4)$ were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that $CH_4$ addition to As processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of $CH_4$, gas component from 0 to $1.2\;vol\;\%$. By adding a sufficient amount of $CH_4\;(1.2\%)$ in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

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질소이온주입에 의한 알루미늄의 표면개질특성 (Surface Modification of Aluminum by Nitrogen ion Implantation)

  • 강혁진;안성훈;이재상;이재형;김경균
    • 한국정밀공학회지
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    • 제22권12호
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    • pp.124-130
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    • 2005
  • The research on surface modification technology has been advanced to improve the properties of engineering materials. ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into aluminum substrates which would be used for mold of rubber materials. The composition of nitrogen ion implanted aluminum alloy and nitrogen ion distribution profile were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than that of untreated specimens. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that ion implantation of nitrogen enhances the surface properties of aluminum mold.

고정밀 저항용 질화탄탈 박막의 특성 (Characteristic of Tantalum Nitride Thin-films for High Precision Resistors)

  • 최성규;나경일;남효덕;정귀삼
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.537-540
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    • 2001
  • This paper presents the characteristics of Ta-N thin-film for high precision resistors, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4~16 %)$N_2$). Structural properties studied using X-ray diffraction(XRD) indicate the presence of TaN, $Ta_3N_5$ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % $N_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho=305.7{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-36 $ppm/^{\circ}C$.

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고정밀 저항용 질화탄탈 박막의 특성 (Characteristic of Tantalum Nitride Thin-films for High Precision Resistors)

  • 최성규;나경일;남효덕;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.537-540
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    • 2001
  • This paper presents the characteristics of Ta-N thin-(ibm for high precision resistors, which were deposited oni substrate by DC reactive magnetorn sputtering in an argon-nitrogen atmosphere(Ar-(4∼16%)N$_2$). Sturcutural properties sutided using X-ray diffraction (XRD) indicate the presence of TaN, Ta$_3$N$\sub$5/ or a mixture of Ta-N phases in the films depending on the amount of nitrogen in the sputtering gas. The chemical composition are investigated by auger electro spectroscopy(AES). The optimized conditions of Ta-N thin-film resistors were deposited in 4 % N$_2$ gas flow ratio. Under optimum conditions, the Ta-N thin-film resistors are obtained a high resistivity, $\rho$=305.7 ${\mu}$Ωcm, a low temperature coefficient of resistance, TCR=-36 ppm/$^{\circ}C$.

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