• KSTLE International Journal
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• 제1권1호
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• pp.12-20
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• 2000

Nano-wear and friction of carbon overcoated laser-textured and mechanically-textured computer hard disk were characterised after contact start/stop (CSS) wear test. Various analytical and mechanical testing techniques were employed to study the changes in topography, roughness, chemical elements, mechanical properties and friction characteristics of the coating arising from the contact start/stop wear test These techniques include: the atomic force microscopy (AFM), the continuous nano-indentation test, the nano-scratch test, the time-of-flight secondary ion mass spectroscopy (TOF-SIMS) and the auger electron spectroscopy (AES). It was shown that the surface roughness of the laser-textured (LT) bump and mechanically textured (MT) Bone was reduced approximately am and 7nm, respectively, after the CSS wear test. The elastic modulus and hardness values increased after the CSS test, indicating straining hardening of the top coating layer, A critical load was also identified fer adhesion failure between the magnetic layer and the Ni-P layer, The TOF-SIMS analysis also revealed some reduction in the intensity of C and $C_2$$F_59$, confirming the wear of lubricant elements on the coating surface.

• 한국재료학회지
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• 제9권9호
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• pp.932-936
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• 1999

4NH(sub)3+$3O_2$$\longrightarrow$$2N_2$+$6H_2$O 의 화학반응식을 가지며$ O_2$ 및 $H_2$O를 산화제로 하는 $NH_3$/$O_2$산화의 성장모델을 세웠으며, 그 결과 Fick의 제 1 법칙을 기초로 하는 건식 및 습식 산화메카니즘으로 이해되는 Deal-Grove의 산화막 성장모델과 유사한 결과가 도출되었다. 이 성장모델에 의하면 산화제$ O_2$ 및 $H_2$O가 상호보완적으로 산화에 영향을 미치므로 산화온도 뿐 아니라 $NH_3$/O$_2$의 유량비도 산화율을 결정한다. rapid thermal processing(RTP)에 의한 산화막 성장실험으로 본 연구에서 제안하는 성장모델을 확인하였으며, NH$_3$분자의 분해에 의해 발생하는 N 원자의 산화막 내부확산을 secondary ion mass spectroscopy(SIMS)로 확인하였으며, Auger electron spectroscopy (AES) 측정결과 N 원자의 존재는 무시할만한 수준이었다.

• Transactions on Electrical and Electronic Materials
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• 제13권6호
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• pp.287-291
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• 2012

We investigated the etching characteristics of TaN thin films in an $O_2/BCl_3/Cl_2/Ar$ gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to $SiO_2$ were obtained as 172.7 nm/min and 6.27 in the $O_2/BCl_3/Cl_2/Ar$ (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1999년도 춘계학술대회 논문집
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• pp.128-133
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• 1999

In recent years, LSI devices have become more powerful and lower-priced, caused by a development of various wafer materials and an increase in the diameter of wafers. On the other hand, these have created some serious problems in manufacturing of wafers because materials used as semiconductor substrate are very brittle. In view of this fact, there are some trials to apply shear-mode(or ductile-mode) grinding for efficient manufacturing of semiconductor wafers instead of conventional lapping process. In fact grinding process that has not only more excellent degree of accuracy but also more adaptable to fully automated manufacturing than lapping, is already used in Si machining field. This paper described the elementary studies to establish the grinding technology of wafers. First, we investigated the variation of grinding force and the transition of grinding mode as various grinding conditions. Then, it was inspected that the change of grinding force affected the integrity such as the topography and the roughness of ground surfaces, and led to the chemical defects generation and distribution in damaged layer. The degree of defects was estimated by FT-IR(Fourier Transformed Infrared) Spectroscopy and Auger Electron Spectroscopy

• 한국진공학회지
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• 제5권1호
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• pp.39-47
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• 1996

The segregation of S in electrotransport-purified polycrystaline $\alpha$-Ti and Ti-aluminide alloys has been studied by Auger electron spectroscopy(AES), Ion scattering spectroscopy(ISS) and Secondary ion mass spectrometry(SIMS) in the temperature range extending from 20 to $1000^{\circ}C$. The chemisorbed oxygen and carbon on Ti were observed to disappear at T>$400^{\circ}C$ after which the S signal increased to levels approaching 0.5 monolayer. At lower temperatures the presence of the surface oxygen and carbon appeared to inhibit the segregation, presumably because there were no available surfaces sites for the S emerging from the bulk. The activation energy for the S segregation in pure polycrystaline Ti was determined to be 16.7 kcal/mol, which, when compared to S segretation from single-crystal Ti, is quite small and suggests grain boundary or defect diffusion segregation kinetics. In the Ti-aluminide alloys, the presence of Al appeared to enhance the retention of surface oxygen which, in turn, substantially reduced the S segretation. The $\gamma$ alloy, with its high Al content, exhibited the greatest retention of surface oxygen and the smallest quantity of the S segregation(T$\simeq1000^{\circ}C$).

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• International Journal of Precision Engineering and Manufacturing
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• 제7권1호
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• pp.57-61
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• 2006

The research on surface modification technology has been advanced to improve the properties of engineering materials. Ion implantation is a novel surface modification technology that enhances the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into AC7A aluminum substrates which would be used as molds for rubber molding. The composition of nitrogenion implanted aluminum and distribution of nitrogen ions were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimen was higher than that of untreated specimen. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that implantation of nitrogen ions enhances the mechanical properties of aluminum mold.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.175-176
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• 2002

Our study is to search for tribological properties of diamond-like carbon (DLC) films as known as anti- wear hard thin film on various polymers. This report deals with the deposition of DLC films on various polymer substrates in vacuum by magnetron radio frequency (RF) sputtering method with using argon plasma and graphite, titanium target. The properties of friction and wear are measured using a ball-on-disk wear -testing machine. The properties of friction and wear have been remarkably improved by DLC coating. Moreover the composition of DLC films has been analyzed by using auger electron spectroscopy(AES). The wear rate of titanium-containing DLC film is lower than that of no-metal-containing DLC film.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.20-23
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• 2000

We have investigated a process for the preparation of high-quality tantalum oxynitride ( $T_{a}$ $O_{x}$ $N_{y}$) via the N $H_3$ annealing of 7$_{a2}$ $O_{5}$, for use in gate dielectric applications. Compared with tantalum oxide (7$_{a2}$ $O_{5}$), a significant improvement in the dielectric constant was obtained by the N $H_3$ treatment. In addition, light reoxidation in a wet ambient at 45$0^{\circ}C$ resulted in a significantly reduced leakage current. We confirmed nitrogen incorporation in the tantalum oxynitride ( $T_{a}$ $O_{x}$ $N_{y}$ by Auger Electron Spectroscopy. By optimizing the nitridation and reoxidation process, we obtained an equivalent oxide thickness as thin as 1.6nm and a leakage current of less than 10mA/$\textrm{cm}^2$ at 1.5V..5V..5V..5V..5V..5V.

• 한국전기전자재료학회논문지
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• 제18권8호
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• pp.734-739
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• 2005

Zinc oxide films were deposited on Si (111) substrates by radio-frequency (rf)sputtering at a room temperature and post annealed in Na, air, and $H_2O$ ambient at temperatures between $800{\circ}C$ for 2 hrs. The properties were investigated by atomic force microscope (AFM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and photoluminescence (PL). Our experiments demonstrated that ZnO films have the better crystal quality for post thermal annealing and especially in $H_2O$ ambient. Even though thermal annealing reduced deep level emission somewhat, for further getting rid off deep level emission, oxygen contents should be adjusted. In our results, $H_2O$ ambient gave the best structural and optical properties.