• Title/Summary/Keyword: Au-Sn

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Selective Leaching Process of Precious Metals (Au, Ag, etc.) from Waste Printed Circuit Boards (PCBs) (廢 PCBs부터 귀금속(Au, Ag 등)의 선택적 침출공정)

  • 오치정;이성오;국남표;김주환;김명준
    • Resources Recycling
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    • v.10 no.5
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    • pp.29-35
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    • 2001
  • This study was carried out to recover gold, silver and valuable metals from the printed circuit boards (PCBs) of waste computers. PCBs samples were crushed under 1 mm by a shredder and separated into 30% conducting and loft nonconducting materials by an electrostatic separator. The conducting materials contained valuable metals which were then used as feed materials for magnetic separation. 42% of magnetic materials from the conducting materials was removed by magnetic separation as nonvaluable materials and the others, 58% of non magnetic materials, was used as leaching samples containing 0.227 mg/g Au and 0.697 mg/g Ag. Using the materials of leaching from magnetic separation, more than 95% of copper, iron, zinc, nickel and aluminium was dissolved in 2.0M sulfuric acid solution, added with 0.2M hydrogen peroxide at $85^{\circ}C$. Au and Ag were not extracted in this solution. On the other hand, more than 95% of gold and 100% of silver were leached by the selective leaching with a mixed solvent (0.2M($NH_4$)$_2$$S_2$$O_3$,0.02M $CuSO_4$,0.4M $NH_4$OH). Finally, the residues were reacted with a NaCl solution to leach Pb whereas sulfuric acid was used to leach Sn. Recoveries reached 95% and 98% in solution, respectively.

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Flip Chip Process on the Local Stiffness-variant Stretchable Substrate for Stretchable Electronic Packages (신축성 전자패키지용 강성도 국부변환 신축기판에서의 플립칩 공정)

  • Park, Donghyeun;Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.4
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    • pp.155-161
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    • 2018
  • A Si chip with the Cu/Au bumps of $100-{\mu}m$ diameter was flip-chip bonded using different anisotropic conductive adhesives (ACAs) onto the local stiffness-variant stretchable substrate consisting of polydimethylsiloxane (PDMS) and flexible printed circuit board (FPCB). The average contact resistances of the flip-chip joints processed with ACAs containing different conductive particles were evaluated and compared. The specimen, which was flip-chip bonded using the ACA with Au-coated polymer balls as conductive particles, exhibited a contact resistance of $43.2m{\Omega}$. The contact resistance of the Si chip, which was flip-chip processed with the ACA containing SnBi solder particles, was measured as $36.2m{\Omega}$, On the contrary, an electric open occurred for the sample bonded using the ACA with Ni particles, which was attributed to the formation of flip-chip joints without any entrapped Ni particles because of the least amount of Ni particles in the ACA.

Flip Chip Solder Joint Reliability of Sn-3.5Ag Solder Using Ultrasonic Bonding - Study of the interface between Si-wafer and Sn-3.5Ag solder (초음파를 이용한 Sn-3.5Ag 플립칩 접합부의 신뢰성 평가 - Si웨이퍼와 Sn-3.5Ag 솔더의 접합 계면 특성 연구)

  • Kim Jung-Mo;Kim Sook-Hwan;Jung Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.1 s.38
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    • pp.23-29
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    • 2006
  • Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.

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A Study of Transient Liquid Phase Bonding with Ni-foam/Sn-3.0Ag-0.5Cu Composite Solder for EV Power Module Package Application (Ni-foam/Sn-3.0Ag-0.5Cu 복합 솔더 소재를 이용한 EV 파워 모듈 패키지용 천이 액상 확산 접합 연구)

  • Young-Jin Seo;Min-Haeng Heo;Jeong-Won Yoon
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.1
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    • pp.55-62
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    • 2023
  • In this study, Sn-3.0Ag-0.5Cu (wt.%, SAC305) solder dipping process was performed between Ni-foam skeleton with different pore per inch (PPI) to fabricate Ni-foam/SAC305 composite solder, and then applied to the transient liquid phase (TLP) bonding process to evaluate the microstructure and mechanical properties of the bonded joint. The Ni-foam/SAC305 composite solder preform consisted of Ni-foam and SAC305, and an intermetallic compound (IMC) having a (Ni,Cu)3Sn4 composition was formed at the Ni-foam interface. During TLP bonding process, the IMC at the Ni-foam interface was converted to (Ni,Cu)3Sn4+Au, and as the bonding time increased, the Ni-foam and SAC305 continuously reacted, and the bonded joint was converted into an IMC. And it was confirmed that the 130 PPI Ni-foam/SAC305 composite solder joint was converted into an IMC at the fastest rate. As a result of performing a shear test to confirm the effect of Ni-foam on mechanical properties, solder joints under all conditions exhibited excellent mechanical properties of 50 MPa or more in the early stages of the TLP bonding process, and the shear strength tends to increase as the bonding time increases.

Synthesis and characterization of $SnO_2$ nanowires on Si substrates in a thermal chemical vapor deposition process (열화학기상증착법을 이용한 Si 기판 위의 $SnO_2$ 나노와이어 제작 및 물성평가)

  • Lee, Deuk-Hee;Park, Hyun-Kyu;Lee, Sam-Dong;Jeong, Soon-Wook;Kim, Sang-Woo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.3
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    • pp.91-94
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    • 2007
  • Single-crystalline $SnO_2$ nanowires were successfully grown on Si(001) substrates via vapor-liquid-solid mechanism in a thermal chemical vapor deposition. Large quantity of $SnO_2$ nanowires were synthesized at temperature ranges of $950{\sim}1000^{\circ}C$ in Ar atmosphere. It was found that the grown $SnO_2$ nanowires are of a tetragonal rutile structure and single crystalline by diffraction and transmission electron microscopy measurements. Broad emission located at about 600 m from the grown nanowires was clearly observed in room temperature photoluminescence measurements, indicating that the emission band originated from defect level transition into $SnO_2$ nanowires.

Reliability evaluation of 1608 chip joint using Sn8Zn3Bi solder under high temperature and high humidity (Sn8Zn3Bi 솔더를 이용한 1608 칩 솔더링부의 고온고습 신뢰성 평가)

  • Kim, Gyu-Seok;Lee, Yeong-U;Hong, Seong-Jun;Jeong, Jae-Pil;Mun, Yeong-Jun;Lee, Ji-Won;Han, Hyeon-Ju;Kim, Mi-Jin
    • Proceedings of the KWS Conference
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    • 2005.11a
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    • pp.228-230
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    • 2005
  • Sn-8wt%Zn-3wt%Bi (이하, Sn-8Zn-3Bi) 솔더의 장기 신뢰성을 평가하기 위하여 고용고습시험을 행하였다. 고온 고습 시험은 $85^{\circ}C$/85RH 조건에서 1000 시간 동안 하였다. 접합 기판으로는 각각 OSP (Organic Solderability Preservative), Sn 그리고 Ni/Au 처리를 한 PCB(Printed Circuit Board) 패드를 사용하였다. 접합에 사용한 부품은 1608Chip 으로 MLCC(Multi Layer Ceramic Capacitor 이하, 1608C) 와 Chip Resister(이하, 1608R)을 사용하였으며, 이 두 부품의 전극부위에 Sn-10wt%Pb(이하 Sn-l0PB), Sn을 각각 도금하였다. 솔더링 후 1608C 와 1608R의 전단 접합 강도와 솔더링부에서 Zn상의 변화를 관찰하였다. 측정결과, Sn-8Zn-3Bi 솔더의 초기 전단 접합 강도는 기판의 표면처리에 상관없이 약 40N 이었다. 그러나 고온 고습 시험 1000 시간 후에는 기판의 표면처리에 상관없이 약 30N 까지 감소하였다. 하지만 이는 reference인 Sn-37Pb 솔더의 강도값과 거의 유사하며, 이는 Sn-8Bi-3Zn 솔더의 고온 고습 시험 후 전단강도 특성은 기존 유연솔더와 비교하여 동등이상이라고 평가할 수 있다.

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Surface Tension of Molten Ag-Sn and Au-Cu Alloys at Different Oxygen Partial Pressures (다양한 산소분압에 따른 용융 Ag-Sn 및 Ag-Cu 합금의 표면장력)

  • Min, Soon-Ki;Lee, Joon-Ho
    • Korean Journal of Materials Research
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    • v.19 no.1
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    • pp.13-17
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    • 2009
  • A semi-empirical method to estimate the surface tension of molten alloys at different oxygen partial pressures is suggested in this study. The surface tension of molten Ag-Sn and Ag-Cu alloys were calculated using the Butler equation with the surface tension value of pure substance at a given oxygen partial pressure. The oxygen partial pressure ranges were $2.86{\times}10^{-12}$$1.24{\times}10^{-9}$ Pa for the Ag-Sn system and $2.27{\times}10^{-11}$$5.68{\times}10^{-4}$ Pa for the Ag-Cu system. In this calculation, the interactions of the adsorbed oxygen with other metallic constituents were ignored. The calculated results of the Ag-Sn alloys were in reasonable accordance with the experimental data within a difference of 8%. For the Ag-Cu alloy system at a higher oxygen partial pressure, the surface tension initially decreased but showed a minimum at $X_{Ag}$ = 0.05 to increase as the silver content increased. This behavior appears to be related to the oxygen adsorption and the corresponding surface segregation of the constituent with a lower surface tension. Nevertheless, the calculated results of the Ag-Cu alloys with the present model were in good agreement with the experimental data within a difference of 10%.