• Title/Summary/Keyword: Au thin film

Search Result 302, Processing Time 0.03 seconds

Evaluation of the Residual Stress on the Multi-layer Thin Film made of Different Materials (이종재료를 사용한 다층 박막에서의 잔류응력 평가)

  • 심재준;한근조;김태형;안성찬;한동섭;이성욱
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.20 no.9
    • /
    • pp.135-141
    • /
    • 2003
  • MEMS structures generally have been fabricated using surface-machining method, but the interface failure between silicon substrate and evaporated thin film frequently takes place due to the residual stress inducing by the applied the various loads. And the very important physical property in the heated environment is the linear coefficient of thermal expansion. Therefore this paper studied the residual stress caused the thermal loads in the thin film and introduced the simple method to measure the trend of the residual stress by the indentation. Specimens were made of materials such as Al, Au and Cu and thermal load was applied repeatedly. The residual stress was measured by nano-indentation using AFM and FEA. The existence of the residual stress due to thermal load was verified by the experimental results. The indentation length of the thermal loaded specimens increased minimum 11.8% comparing with the virgin thin film caused by tensile residual stress. The finite element analysis results are similar to indentation test.

Study of surface state density of hydrogenated amorphous silicon thinfilm transistors by admittance spectroscopy

  • Hsieh, Ming-Ta;Chang, Chan-Ching;Chen, Jenn-Fang;Zan, Hsiao-Wen;Yen, Kuo-Hsi;Shih, Ching-Chieh;Chen, Chih-Hsien;Lee, Yeong-Shyang;Chiu, Hsin-Chih
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08a
    • /
    • pp.904-907
    • /
    • 2007
  • We reported a simplified circuit model to investigate the interface states and the quality of a-Si film based on a MIS structure using admittance spectroscopy. The model can be employed easily to monitor the fabrication process of thin-film transistor and to obtain the important parameters.

  • PDF

Dielectric properties of Pt/PVDF/Pt modified by low energy ion beam irradiation

  • Sung Han;Yoon, Ki-Hyun;Jung, Hyung-Jin;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 1999.07a
    • /
    • pp.110-110
    • /
    • 1999
  • Polyvinylidenefluoride (PVDF) is most used in piezoelectric polymer industry. Electrode effect on the electrical properties of PVDF has been investigated. al has been used due to fair adhesion for PVDF. Work function of metal plays an important role on the electrical properties of ferroelectrics for top and /or bottom electrode. However, Al has much lower work function than Pt or Au and so leakage current of Al/PVDF/Al may be large. Pt or Au has not been used for electrode of PVDF system due to poor adhesion. PVDF irradiated by Ar+ ion beam with O2 environment takes good adhesion to inert metal. Contact angle of PVDF to triple distilled water was reduced from 75$^{\circ}$ to 31$^{\circ}$ at 1$\times$1015 Ar+/cm2. Working pressure was 2.3$\times$10-4 Torr and base pressure was 5$\times$10-6 Torr. Pt was deposited by ion beam sputtering and thickness of pt film was about 1000$\AA$. in previous study, enhancing adhesion of Pt on PVDF was shown. in this study, effect of electrode on PVDF will be represented.

  • PDF

Soft Lithographic Patterning Method for Flexible Graphene-based Chemical Sensors with Heaters

  • Kang, Min-a;Jung, Min Wook;Myung, Sung;Song, Wooseok;Lee, Sun Suk;Lim, Jongsun;Park, Chong-Yun;An, Ki-Seok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.176.2-176.2
    • /
    • 2014
  • In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

  • PDF

Au nano array formed on patterened $Al_2O_3$(0006)

  • Hwang, Jae-Seong;Gang, Hyeon-Cheol;Seo, Ok-Gyun;O, Pil-Geon;Lee, Seong-Pyo;Lee, Su-Yong;Kim, Su-Nam;Kim, Jae-Myeong;Jo, In-Hwa;No, Do-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.02a
    • /
    • pp.402-402
    • /
    • 2010
  • The formation of Au nano particles from thin films on patterned substrates depends sensitively on film thickness and time. The nano Au line and shape formed by annealing Au films on patterned oxide substrates are different from those formed on semiconductor. In this experiment, we deposited thin Au films on patterned $Al_2O_3$(0006) using E-beam evaporator, and annealed them at various temperatures and thickness under various conditions by RTA. We measured behavior of the Au during annealing Au structure and shape are changed when Au film becomes thicker. The shape of the resultant Au nano particles and their coarsening process are investigated using SEM and XRD.

  • PDF

$SnO_2$-based thin film gas sensors in array for recognizing inflammable gases (가연성 가스 인식을 위한 $SnO_2$계열의 박막 가스센서)

  • 이대식;심창현;이덕동
    • Journal of the Korean Vacuum Society
    • /
    • v.10 no.3
    • /
    • pp.289-297
    • /
    • 2001
  • Highly-porous $SnO_2$thin films were prepared for recognizing and detecting of the inflammable gases, like butane, propane, LPG, carbon monoxide. To obtain sensing films, Sn, Pt/Sn, Au/Sn, and Pt,Au/Sn films were deposited employing a thermal evaporator for Sn film and a sputter for novel metals of Pt or/and Au. These films were annealed for 2 h at $700^{\circ}C$ to form $SnO_2$-based thin films. The films showed the tetragonal structure and also exhibited many defects and porosity, which could give high sensitivity to thin films. The thin films showed high sensitivity and reproductivity to the tested gases(butane, propane, LPG, and carbon monoxide) to even to low gas concentrations in range of workplace environmental standards. Especially, Pt/$SnO_2$film showed the highest sensitivity to butane, LPG, and carbon monoxide. And pure $SnO_2$ film manifested the highest sensitivity to propane. By using the sensing patterns from the films, we could reliably recognize the kinds and the quantities of the tested inflammable gases within the range of the threshold limit values(TLV) and the lower explosion limit(LEL) through the principal component analysis(PCA).

  • PDF

Synthesis and characterization of LiCoO2 thin film by sol-gel process (Sol-gel법에 의한 LiCoO2 박막의 합성과 특성평가)

  • Roh, Tae-Ho;Yon, Seog-Joo;Ko, Tae-Seog
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.24 no.3
    • /
    • pp.94-98
    • /
    • 2014
  • $LiCoO_2$ thin film has received diverse attention as cathodes material of thin-film micro-batteries. In this study, $LiCoO_2$ thin films were synthesized on Au substrates by sol-gel spin coating method and an annealing process. Their structures were studied using X-ray diffraction and Raman Spectroscopy. The particle morphologies of these thin films were observed by Scaning electron microscope. From the results of X-ray diffractometry and Raman Spectroscopy analyses, it was found that as-grown films had the structure of spinel (LT-$LiCoO_2$) and layered-Rock-salt (HT-$LiCoO_2$) at $550^{\circ}C$ and $750^{\circ}C$ respectively. The annealed films at $650^{\circ}C$ were presumed to be the mixed state of these two types. Throlugh the scanning electron microscope, It was estimated that the particle size in as-grown films at $750^{\circ}C$, were larger crystilline particle than in those at the other lower temperature and well distributed in the film.

The Electrical and Radiation Detection Properties of $Au/Cd_{1-x}Zn_x/Te(x=20%)/Au$ Structure ($Au/Cd_{1-x}Zn_x/Te(x=20%)/Au$ 구조의 전기적 특성 및 방사선 탐지 특성)

  • 최명진;왕진석
    • Electrical & Electronic Materials
    • /
    • v.10 no.1
    • /
    • pp.39-44
    • /
    • 1997
  • Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

  • PDF

The Characteristics of Ga-doped ZnO Transparent Thin Films by using Multilayer (다층박막을 이용한 Ga-doped ZnO 투명전도막의 특성)

  • Kim, Bong-Seok;Lee, Kyu-Il;Kang, Hyun-Il;Lee, Tae-Yong;Oh, Su-Young;Lee, Jong-Hwan;Song, Joon-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.12
    • /
    • pp.1044-1048
    • /
    • 2007
  • With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.