• 한국재료학회지
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• 제24권10호
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• pp.543-549
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• 2014

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• 한국재료학회지
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• 제20권8호
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• pp.401-407
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• 2010

We studied the influence of different types of metal electrodes on the performance of solution-processed zinc tin oxide (ZTO) thin-film transistors. The ZTO thin-film was obtained by spin-coating the sol-gel solution made from zinc acetate and tin acetate dissolved in 2-methoxyethanol. Various metals, Al, Au, Ag and Cu, were used to make contacts with the solution-deposited ZTO layers by selective deposition through a metal shadow mask. Contact resistance between the metal electrode and the semiconductor was obtained by a transmission line method (TLM). The device based on an Al electrode exhibited superior performance as compared to those based on other metals. Kelvin probe force microscopy (KPFM) allowed us to measure the work function of the oxide semiconductor to understand the variation of the device performance as a function of the types metal electrode. The solution-processed ZTO contained nanopores that resulted from the burnout of the organic species during the annealing. This different surface structure associated with the solution-processed ZTO gave a rise to a different work function value as compared to the vacuum-deposited counterpart. More oxygen could be adsorbed on the nanoporous solution-processed ZTO with large accessible surface areas, which increased its work function. This observation explained why the solution-processed ZTO makes an ohmic contact with the Al electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.77-77
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• 2008

금(Au)이나 은(Ag)과 같은 귀금속 물질로 형성된 금속 나노 구조체는 표면 플라즈몬 공진(Surface Plasmon Resonance, SPR) 현상과 이의 국부 환경(local environment) 변화에 대해 민감한 의존성으로 인하여 생화학적 센서로의 응용이 주목 받고 있다. 표면 플라즈몬 공진은 광 흡수와 광 산란을 수반하는데, 두 가지 특성 모두 분광학적 신호검출방식으로 센서에 응용가능하다. 이 중 광 산란을 이용하는 방식은 광원의 배경잡음 효과가 배제되기 때문에 단일 입자 검출에 유리하다. 광 흡수와 광 산란 특성은 금속 나노 구조체는 크기, 형상, 주변 매질, 물질의 선택에 따라서 영향을 받는다. 본 연구에서는 금 나노 디스크(nanodisc)의 형상에 따라서 여기 되는 표면 플라즈몬이 광 흡수와 광 산란 특성에 미치는 영향을 가시광과 근적외선 영역에 대해서 불연속 쌍극자 근사법(Discrete Dipole Approximation, DDA)을 이용하여 전사모사(simulation) 하였다. 금 나노 디스크의 형상과 플라즈몬 특성 간의 관계는 공명 파장과 산란 양자 거둠율(scattering quantum yield, $\eta$)을 이용하여 분석하였고, 센서로서의 응용을 가늠하기 위해 주변 매질의 굴절률을 조절하여 그에 따른 민감도(sensitivity )를 비교하였다. 나노 디스크의 모양이 판상에 가까워질수록 공명 파장은 적색 편이하였고 광 산란 효율과 민감도는 증가하는 현상이 나타났다. 또한, 산란 양자 거둠율은 증가하다가 완만하게 감소하는 경향이 나타났다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1696-1698
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• 2000

We give pressure stimulation into long chain fatty acid of LB thin films then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from 0[V] to +1.5[V] and the capacitor. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.913-919
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• 2000

We give pressure stimulation into long chain fatty acid of LB thin films then manufacture a device under the accumulation condition that the state surface pressure is 20[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 13, 17 and 19. The I-V characteristic of the device is measured from 0[V] to +1.5[V]. We have investigated the capacitance because this fatty acid system have a accumulated layers. The maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• Journal of Electrical Engineering and Technology
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• 제2권1호
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• pp.98-101
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• 2007

Yttrium(Y)-substituted bismuth titanate $(Bi_{4-x},Y_x)Ti_3O_{12}$ [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrates. The structural properties and electrical properties of yttrium-substituted $(Bi_4-xYx)Ti_3O_{12}$ thin films were analyzed. The remanent polarization of $(Bi_4-xYx)Ti_3O_{12}$ films increased with increasing Y-content. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of $8{\mu}C/cm^2$ and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The $(Bi_{3.25}Y_{0.75})Ti_3O_{12}$ films exhibited fatigue-free behavior up to $4.5{\times}10^{11}$ read/write switching cycles at a frequency of 1MHz.

• 한국재료학회지
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• 제5권6호
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• pp.754-762
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• 1995

차세대 LSI용 유전체 박막으로서의 응용을 목적으로 RF 마그네트론 스퍼터링법으로 Si기판위에 SrTiO$_3$박막을 제조하였다. Ar과 $O_2$혼합가스 비, 바이어스 전압변화, 열처리 온도등의 증착조건을 다양하게 변화시키며 SrTiO$_3$박막을 제조하여 최적의 증착조건을 조사하였다. 박막의 결정성을 XRD로, 박막과 Si 사이의 계면의 조성분포를 AES로 각각 분석하였다. Ar과 $O_2$의 혼합가스를 스퍼터링 가스로 사용함으로써 결정성이 좋은 박막을 얻었다. 그리고 보다 치밀한 박막을 얻고자 바이어스 전압을 걸어주며 증착시켰다. 본 실험결과에서는 스퍼터링 가스는 Ar+20% $O_2$혼합가스, 바이어스 전압은 100V에서 좋은 결정성을 얻었다. 또한 하부전극으로 Pt, 완충층으로 Ti를 사용함으로써 SrTiO$_3$막과 Si 기판과의 계면에서 SiO$_2$층의 형성을 억제할 수 있었으며, Si의 확산을 막을 수 있었다. 전류 및 유전특성을 측정하기 위해 Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si로 구성된 다층구조의 시편을 제작하였다. Pt/Ti층은 RF 스퍼터링으로, Au 전극은 DC 마그네트론 스퍼터링법으로 증착시켰다 $600^{\circ}C$로 열처리함에 의해 미세하던 결정림들이 균일하게 성장하였으며, 이에 따라 유전율이 증가하고 누설전류가 감소하였다. $600^{\circ}C$에서 열처리한 두께 300nm의 막에서 유전율은 6.4fF/$\mu\textrm{m}$$^2$이고, 비유전상수는 217이었으며, 누설전류밀도는 2.0$\times$$10^{-8}$ A/$\textrm{cm}^2$로 양질의 SrTiO$_3$박막을 제조하였다.

• 한국산학기술학회논문지
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• 제18권11호
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• pp.88-93
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• 2017

다양한 응용분야를 가진 국부적인 표면플라즈몬 공명 특성을 손쉽게 제어할 수 있는 기술 개발은 매우 중요하다. 또한, 금속 나노입자의 형태, 크기, 그리고 조합에 관한 세심한 조사는 공명특성과 금속 나노구조의 관계를 이해하는데 매우 유용하다. 본 논문은 블록공중합체 마이셀 박막필름으로부터 얻어진 금속나노입자 배열에 따른 국부적인 표면플라즈몬의 공명특성에 관한 연구이다. 우선 전통적인 방법의 블록공중합체 리소그라피를 통해 두 가지 다른, 점 형태 및 링 형태, 금 나노입자를 제조하였다. 그 다음 은거울 반응을 통하여 금 나노입자위에 은이 둘러 쌓이도록 금/은 이중금속 나노구조를 구현했다. 금속 나노 구조체 조절을 위해 에탄올 전처리, 은거울 반응 시간, 블록공중합체의 제거 유무 등의 공정변수를 변화시켰다. 초기 금 나노입자가 잘 제조된 경우 항상 금나노입자 표면에 적절히 은이 잘 형성되었고, 이는 UV-Vis 실험에서 각 금속나노 입자의 고유 플라즈몬 밴드인 금 525nm, 은 420nm에서 각각 나타났다. 하지만 최초 적은 양의 금 나노입자가 제조되었을 경우 은 도금 속도가 빨라져서, 초기 금 나노입자의 표면을 은이 완전히 덮었으며, 이는 UV-Vis 실험에서 금의 플라즈몬 밴드는 나타나지 않고, 은의 고유 플라즈몬 밴드만 420nm에서 나타났다. 블록공중합체로부터 미리 합성된 금나노입자 위에 은을 도금하는 방법은 국부적인 표면플라즈몬 특성을 면밀히 조사하는데 매우 유용하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.172-176
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• 2002

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structured solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20um width and 3um thickness is electroplated on Cr(300${\AA}$)/Au(1500${\AA}$) films for the pick-up(42turn) and the excitation(24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3 $\mu\textrm{m}$ is obtained under 2000Gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ∼1,100 and coercive field of -0.1Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150V/T at the excitation frequency of 2MHz and the excitation voltage of 4.4Vp-p. The power consumption is estimated to be 50mW.