• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.243-246
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• 2000

The sputtering systems mainly consist of the three-target holder. The target and substrate were the on-axis type. The MgO and STO substrate were used for the deposition of each layer. The optimum conditions of single-layer thin film were investigated from the SEM images and the XRD patterns. Based on the above conditions, the multi-layer thin films such as YBaCuO/LaGaO/Au/Nb and YBaCuO/Au/Nb were fabricated. The crystalline, the electrical Properties, the energy gap structure and the characteristics of the tunneling barrier on the multi-layer thin film have been investigated and characterized.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.195-199
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• 2011

ITO thin films and gold (Au), copper (Cu) and nickel (Ni) intermediate ITO multilayer (ITO/Au/ITO, ITO/Cu/ITO, ITO/Ni/ITO) films were deposited on glass substrates with a reactive radio frequency and direct current magnetron sputtering system and then the effect of intermediate metal layer and annealing temperature on the methanol gas sensitivity of ITO films were investigated. Although both ITO and ITO/metal/ITO (IMI) film sensors have the same total thickness of 100 nm, IMI sensors have a sandwich structure of ITO 50 nm/metal 10 nm/ITO 40 nm. The change in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm was measured at room temperature. The IAI film sensors showed the higher sensitivity than the other sensors. Finally, it is concluded that the ITO 50/Au 10/ITO 40 nm film sensors hasthe potential to be used as improved methanol gas sensor.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.74-77
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• 2006

Thin $AuO_x$ layer was formed by $O_2$ plasma treatment on Au electrode. The surface work function of plasma treatment showed higher by 0.5 eV than that of bare Au, reducing the hole injection barrier at the Au/pentacene interface. Using $O_2$ plasma-treated Au source-drain electrodes, the field-effect mobility of bottom-contact pentacene-OTFT was increased from 0.05 to 0.1 $cm^2/Vs$.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.92-94
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• 2001

We investigated quench recovery characteristics of Au/YBCO thin film meander lines. YB$a_{2}$$Cu_{3}$ $O_{7}$films were coated in-situ with a gold layer and patterned into 2 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents at various source voltages. Resistance decreased first slowly and then rapidly to zero. Resistance vs. time curves for different source voltages fell on top of each other when translated horizontally. The slowly varying portion of data fell on straight lines of a slope on a semi-log scale at all source voltages. A heat balance equation reflecting heat loss from meander lines to surroundings explains these results quantitatively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.491-494
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• 1999

We have examined the electrical properties of arachidic acid Langmuir (L) films by using a displacement current measuring technique with pressure stimulation. We give pressure stimulation into organic thin films and detect the Induced displacement current. The structure of manufactured device is Au/arachidic acid/Al, the number of accumulated layers are 17, 19 and 21. Also, we then examined of the MIM device by means of I-V The I-V characteristic of the device is measured from 0 to +1[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Advances in nano research
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• v.2 no.3
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• pp.173-177
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• 2014

This study is aimed to the numerical modeling of the surface plasmon-polariton excitation by a layer of active (electrically pumped) quantum dots embedded in a semiconductor, covered with a metal. It is shown that this excitation becomes much more efficient if the metal has a form of a thin (with thickness of several nanometers) film. The cause of this enhancement in comparison with a thick covering metal film is the partial surface plasmon-polariton localized at the metal-semiconductor interface penetration into air. In result the real part of the metal+air half-space effective dielectric function becomes closer (in absolute value) to the real part of the semiconductor dielectric function than in the case of a thick covering metal film. This leads to approaching the point of the surface plasmon-polariton resonance (where absolute values of these parts coincide) and, therefore, the enhancement of the surface plasmon-polariton excitation. The calculations were made for a particular example of InAs quantum dot layer embedded in GaAs matrix covered with an Au film. Its results indicate that for the 10 nm Au film the rate of this excitation becomes by 2.5 times, and for the 5 nm Au film - by 6-7 times larger than in the case of a thick (40 nm or more) Au film.

• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.117-124
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• 2015

A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.307.2-307.2
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• 2016

In this study, we synthesized Au nanoparticles (AuNPs) in polyacrylonitrile (PAN) thin films using a simple annealing process in the solid phase. The synthetic conditions were systematically controlled and optimized by varying the concentration of the Au salt solution and the annealing temperature. X-ray photoelectron spectroscopy (XPS) confirmed their chemical state, and transmission electron microscopy (TEM) verified the successful synthesis, size, and density of AuNPs. Au nanoparticles were generated from the thermal decomposition of the Au salt and stabilized during the cyclization of the PAN matrix. For actual device applications, previous synthetic techniques have required the synthesis of AuNPs in a liquid phase and an additional process to form the thin film layer, such as spin-coating, dip-coating, Langmuir-Blodgett, or high vacuum deposition. In contrast, our one-step synthesis could produce gold nanoparticles from the Au salt contained in a solid matrix with an easy heat treatment. The PAN:AuNPs composite was used as the charge trap layer of an organic nano-floating gate memory (ONFGM). The memory devices exhibited a high on/off ratio (over $10^6$), large hysteresis windows (76.7 V), and a stable endurance performance (>3000 cycles), indicating that our stabilized PAN:AuNPs composite film is a potential charge trap medium for next generation organic nano-floating gate memory transistors.

• Bulletin of the Korean Chemical Society
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• v.28 no.6
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• pp.1015-1020
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• 2007

A simple approach to prepare arrays of Au/TiO2 composite nanoparticles by using Au-loaded block copolymers as templates combined with a sol-gel process is described. The organic-inorganic hybrid films with closely packed inorganic nanodomains in organic matrix are produced by spin coating the mixtures of polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/HAuCl4 solution and sol-gel precursor solution. After removal of the organic matrix with deep UV irradiation, arrays of Au/TiO2 composite nanoparticles with different compositions or particle sizes can be easily produced. Different photoluminescence (PL) emission spectra from an organic-inorganic hybrid film and arrays of Au/TiO2 composite nanoparticles indicate that TiO2 and Au components exist as separate state in the initial hybrid film and form composite nanoparticles after the removal of the block copolymer matrix.