• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.94-98
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• 1996

The x-ray diffraction experiments were carried out to investigate the phase transformation of the sputter-deposited Ag-In-Sb-Te optical thin films after rapid thermal annealing and while being annealed with high-temperature x-ray attachment. The formation mechanism of the reported mixed phase, with both amorphous phase and fine crystalline AgSbTe2 phase, of Ag-In-Sb-Te system in its ordered state was explained. Moreover the characteristics of the other phases which appear during the annealing processes were also discussed in the present article.

• Journal of Digital Convergence
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• v.17 no.4
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• pp.327-334
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• 2019

This study is a case study of couple counseling case applying Satir Empirical Growth Model to improve the communication and self - esteem of the sexual offenders who are attached to the electronic devices requested by the representative at the ${\bigcirc}{\bigcirc}$ Compliance Support Center. The counseling process was carried out in this center counseling room for 120 minutes from March to June 2017 once a week for 5 times in total. To validate the effects of this study, researchers and observer-centered techniques were used as subjective evaluations. Based on the results of the study, the following conclusions were obtained. The self - esteem and communication change of the subjects with sexual violence electronic devices were found to be positive. This suggests that there is a significant effect in suggesting the possibility of using the marital counseling in the practice of the correctional facility.

• Science of Emotion and Sensibility
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• v.20 no.4
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• pp.89-100
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• 2017

Since smart devices are able to efficiently provide information without barriers of time and location, they are widely utilized with advent of the hyper-connected society. Especially, the smart devices have been developed in the form of wearable devices for mutual interaction between human and objects. Smart clothing, which embeds smart devices within clothes, measures and obtains a variety of bio-signals as it is in close contact with the human bodies. Conventional smart clothing generated wearers' discomfort because they were developed by simple attachment of electronic devices to clothes. Therefore, it is highly recommended to develop novel smart clothing based on smart textiles which integrate electronic devices as parts of textiles. As smart watches are currently the most available wearable devices in the market, smart watch users were selected in this study, for the purpose of investigating core needs of wearable smart device users based on the user experience and user's sensibility. Qualitative research was performed through semi-structured interview in order to obtain detailed answers about user sensibility based on smart watch user experience. After the in-depth interview, the user's sensibility was categorized into four aspects; functional, aesthetic, social, and empirical. Sensibility adjectives and key words were assigned to each aspect and their frequency was analyzed. It was the functional aspect of sensibility that the wearable device users require the most. The results of this study will be utilized as a fundamental data to develop the smart textiles required for the next generation of smart clothing which is attracting as a future wearable device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.32-35
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• 2002

The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.605-610
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• 2010

The devices based on electrically erasable programmable read-only memory (EEPROM) structure are proposed for the detection of external electric charges. A large size charge contact window (CCW) extended from the floating gate is employed to immobilize external charges, and a control gate with stacked metal-insulator-metal (MIM) capacitor is adapted for a standard single polysilicon CMOS process. When positive voltage is applied to the capacitor of CCW of an n-channel EEPROM, the drain current increases due to the negative shift of its threshold voltage. Also when a pre-charged external capacitor is directly connected to the floating gate metal of CCW, the positive charges of the external capacitor make the drain current increase for n-channel, whereas the negative charges cause it to decrease. For an p-channel, however, the opposite behaviors are observed by the external voltage and charges. With the attachment of external charges to the CCW of EEPROM inverter, the characteristic inverter voltage behavior shifts from the reference curve dependent on external charge polarity. Therefore, we have demonstrated that the EEPROM inverter is capable of detecting external immobilized charges on the floating gate. and these devices are applicable to sensing the pH's or biomolecular reactions.

• Journal of the Korean Institute of Educational Facilities
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• v.21 no.3
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• pp.19-28
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• 2014

Student halls and their convenient facilities have been a focal point for various student activities at university campus. It has been for most of the student a place of unique memories and of attachment often associated with those good and bad school days. However, it is questionable whether these facilities are supportive and accessible for all of the students and other users including the handicapped. Therefore, based on the concept of UD(universal design) which was widely applied to U.S. institutions, this study intended to evaluate student hall facilities in U.S. and to provide an improvement direction for Korean UD application. For that purpose, four universities were selected for an in-depth analysis and 76 survey indices were utilized based on previous research. It was found that (1) design consideration without braille sign for VIP(visually impaired person) in student buildings can be differently approached with electronic devices; (2) the best demonstration of UD in student buildings can be seen in spacious flat pathway, easy access through ramp and wide entry area, necessary for people in wheel-chairs, but used by all, implying an increase of the ratio of public space; (3) one of the good UD features is an attractive physical environment rather than institutional appearance, in which they ultimately will support and completely adaptable at optimal levels by everyone; (4) consistent maintenance and management maximize the potential of UD principles and minimize physical limitations.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.12
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• pp.261-267
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• 2020

The demand for faster, lighter, and thinner portable electronic devices has brought about a change in semiconductor packaging technology. In response, a stacked chip-scale package(SCSP) is used widely in the assembly industry. One of the key materials for SCSP is a die-attach film (DAF). Excellent flowability is needed for DAF for successful die attachment without voids. For DAF with high flowability, two-step curing is often required to reduce a cure crack, but one-step curing is needed to reduce the processing time. In this study, DAF composition was categorized into three groups: cure (epoxy resins), soft (rubbers), hard (phenoxy resin, silica) component. The effect of the composition on a cure crack was examined when one-step curing was applied. The die-attach void and flowability were also assessed. The cure crack decreased as the amount of hard components decreased. Die-attach voids also decreased as the amount of hard components decreased. Moreover, the decrease in cure component became important when the amount of hard component was small. The flowability was evaluated using high-temperature storage modulus and bleed-out. A decrease in the amount of hard components was critical for the low storage modulus at 100℃. An increase in cure component and a decrease in hard component were important for the high bleed-out at 120℃(BL-120).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.