• Title/Summary/Keyword: Atomic vapor

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Fixed Bed Study for a Detritiation Adsorber

  • Kim K. R.;Lee M. S.;Paek S.;Yim S. P,;Ahn D. H.;Chung H.;Shim M. H.
    • Proceedings of the Korean Radioactive Waste Society Conference
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    • 2005.11b
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    • pp.119-125
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    • 2005
  • A method of predicting the tritium concentration in the air leaving an atmospheric detritiation dryer was modeled for designing a fixed bed dryer and preparing an advanced dryer control. In order to quantify the bed utilization and the dynamic capacity against an inlet humidity and a flow rate, a series of quantitative tests based on the break-through behavior were carried out in an isothermal fixed bed of synthetic zeolites such type as molecular sieve 4A, 5A, 13X and mordenite. The amount of water vapor breaking during the adsorption was estimated to give a breakthrough capacity at the various inlet flow rates and humidity conditions. The molecular sieve 13X exhibited a better adsorption performance at a given bed height.

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Synthesis of Graphene by Plasma Enhanced Chemical Vapor Deposition and Its transfer for Device Application

  • Seo, Dong-Ik;Han, Jeong-Yun;Kim, Eon-Jeong;Park, Wan-Jun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.277-277
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    • 2010
  • In this report, we present a very effective growing method of graphene using plasma enhanced chemical vapor deposition(PECVD). The graphene is successfully grown on copper substrate. Low temperature growing is obtained with methane and hydrogen plasma. The graphene layers are analyzed by Raman spectroscopy and atomic force microscope. We also provide a transfer technique of graphene layer onto silicon substrate to build up various kinds of application devices.

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Fabrication of Organic-Inorganic Superlattice Films Toward Potential Use For Gas Diffusion Barrier

  • Yun, Gwan-Hyeok;Muduli, Subas Kumar;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.394-394
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    • 2012
  • We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

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Residence Time Effect on the Growth of ZrC by Low Pressure Chemical Vapor Deposition (저압화학기상증착법을 이용한 ZrC 성장에 잔류시간이 미치는 영향)

  • Park, Jong-Hoon;Jung, Choong-Hwan;Kim, Do-Jin;Park, Ji-Yeon
    • Journal of the Korean Ceramic Society
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    • v.45 no.5
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    • pp.280-284
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    • 2008
  • In order to investigate residence time effect on the growth of ZrC film, the ZrC films grew with various system total pressure (P) and total flow rate (Q) by low pressure chemical vapor deposition because residence time is function of system total pressure and total flow rate. Thermodynamic calculations predict that the decomposition of source gases ($ZrCl_4$ and $CH_4$) would be low as increasing the residence time. Thermodynamic calculations results were proved by investigating deposition rate with various residence time. Deposition rate decreased with residence time of source gas increased. Besides, depletion effect accelerated diminution of deposition rate at high residence time. On the other hands, the deposition rated was increased as decreasing the residence time because fast moving of intermediate gas species decrease the depletion effect. The crystal structure was not changed with residence time. However, the largest size of faceted grain showed up to specific residence time and the size of grain was decreased whether residence time increase or not.

Fracture Behaviors and Mechanical Properties of SiCf/SiC Composites Prepared by the Whisker Growing Assisted CVI Process (Whisker Growing Assisted 화학침착 공정으로 제조된 SiCf/SiC 복합체의 파괴거동과 기계강도 평가)

  • Kang, Seok-Min;Kim, Weon-Ju;Yoon, Soon-Gil;Park, Ji-Yeon
    • Journal of the Korean Ceramic Society
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    • v.46 no.5
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    • pp.484-487
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    • 2009
  • $SiC_f$/SiC composites with whiskers and pyrolytic carbon (PyC) coated whiskers in the matrix were fabricated for enhancement of the fracture behaviors by the whisker growing assisted chemical vapor infiltration (WA-CVI) process, respectively. $SiC_f$/SiC composites were also prepared by the conventional CVI process as reference material. The mechanical properties and fracture behaviors were analyzed by comparison of the two types of composites prepared by WA-CVI and conventional CVI. The densities of $SiC_f$/SiC composites were in the range of $2.6{\sim}2.65g/cm^3$. The flexural strengths of composite with whiskers and with those coated by PyC were 650 MPa and 600 MPa, respectively. The tensile strength of composites with whiskers was ${\sim}285$ MPa.

Carbon-based Materials for Atomic Energy Reactor

  • Sathiyamoorthy, D.;Sur, A.K.
    • Carbon letters
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    • v.4 no.1
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    • pp.36-39
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    • 2003
  • Carbon and carbon-based materials are used in nuclear reactors and there has recently been growing interest to develop graphite and carbon based materials for high temperature nuclear and fusion reactors. Efforts are underway to develop high density carbon materials as well as amorphous isotropic carbon for the application in thermal reactors. There has been research on coated nuclear fuel for high temperature reactor and research and development on coated fuels are now focused on fuel particles with high endurance during normal lifetime of the reactor. Since graphite as a moderator as well as structural material in high temperature reactors is one of the most favored choices, it is now felt to develop high density isotropic graphite with suitable coating for safe application of carbon based materials even in oxidizing or water vapor environment. Carboncarbon composite materials compared to conventional graphite materials are now being looked into as the promising materials for the fusion reactor due their ability to have high thermal conductivity and high thermal shock resistance. This paper deals with the application of carbon materials on various nuclear reactors related issues and addresses the current need for focused research on novel carbon materials for future new generation nuclear reactors.

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Effect of Vapor Deposition on the Interdiffusion Behavior between the Metallic Fuel and Clad Material (금속연료-피복재 상호확산 거동에 미치는 기상증착법의 영향)

  • Kim, Jun Hwan;Lee, Byoung Oon;Lee, Chan Bock;Jee, Seung Hyun;Yoon, Young Soo
    • Korean Journal of Metals and Materials
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    • v.49 no.7
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    • pp.549-556
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    • 2011
  • This study aimed to evaluate the performance of diffusion barriers in order to prevent fuel-cladding chemical interaction (FCCI) between the metallic fuels and the cladding materials, a potential hazard for nuclear fuel in sodium-cooled fast reactors. In order to prevent FCCI, Zr or V metal is deposited on the ferritic-martensitic stainless steel surface by physical vapor deposition with a thickness up to $5{\mu}m$. The diffusion couple tests using uranium alloy (U-10Zr) and a rare earth metal such as Ce-La alloy and Nd were performed at temperatures between 660~800$^{\circ}C$. Microstructural analysis using SEM was carried out over the coupled specimen. The results show that significant interdiffusion and an associated eutectic reaction ocurred in the specimen without a diffusion barrier. However, with the exception of the local dissolution of the Zr layer in the Ce-La alloy, the specimens deposited with Zr and V exhibited superior eutectic resistance to the uranium alloy and rare earth metal.

Characteristics Evaluation of Al2O3 ALD Thin Film Exposed to Constant Temperature and Humidity Environment (항온항습 환경에 노출된 Al2O3 ALD 박막의 특성 평가)

  • Kim, Hyeun Woo;Song, Tae Min;Lee, Hyeong Jun;Jeon, Yongmin;Kwon, Jeong Hyun
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.11-14
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    • 2022
  • In this work, we evaluated the Al2O3 film, which was deposited by atomic layer deposition, degraded by exposure to harsh environments. The Al2O3 films deposited by atomic layer deposition have long been used as a gas diffusion barrier that satisfies barrier requirements for device reliability. To investigate the barrier and mechanical performance of the Al2O3 film with increasing temperature and relative humidity, the properties of the degraded Al2O3 film exposed to the harsh environment were evaluated using electrical calcium test and tensile test. As a result, the water vapor transmission rate of Al2O3 films stored in harsh environments has fallen to a level that is difficult to utilize as a barrier film. Through water vapor transmission rate measurements, it can be seen that the water vapor transmission rate changes can be significant, and the environment-induced degradation is fatal to the Al2O3 thin films. In addition, the surface roughness and porosity of the degraded Al2O3 are significantly increased as the environment becomes severer. the degradation of elongation is caused by the stress concentration at valleys of rough surface and pores generated by the harsh environment. Becaused the harsh envronment-induced degradation convert amorphous Al2O3 to crystalline structure, these encapsulation properties of the Al2O3 film was easily degraded.