• 한국진공학회지
• /
• 제20권6호
• /
• pp.395-402
• /
• 2011

원자힘 현미경을 이용하여 실리콘 기판 위에 증착된 실리콘 나노선과 리튬화된 실리콘 나노선의 나노기계적 성질을 연구했다. 금 촉매를 사용하여 스테인리스 기판 위에서 증기-액체-고체 과정을 통해 실리콘 나노선을 합성하였다. 완전히 리튬화된 실리콘 나노선을 얻기 위해서 전기 화학적 방법을 사용했고, 이를 실리콘 기판 위에 증착하였다. 접촉모드 원자힘 현미경으로 측정된 표면 거칠기는 실리콘 나노선에서 $0.65{\pm}0.05$ nm에 비해 리튬화된 실리콘 나노선에서 $1.72{\pm}0.16$ nm으로 더 큰 값을 보여주었다. 탐침과 표면 사이의 접착력에서 리튬화의 영향을 조사하기 위해 힘 분광기법을 사용했다. 실리콘 나노선의 접착력이 실리콘 기판과 ~60 nN으로 흡사한 반면에, 리튬화된 실리콘 나노선은 ~15 nN으로 더 작은 값을 나타냈다. 또한, 탄성적으로 부드러운 무정형 구조 때문에 국부적 탄성 스프링 상수도 실리콘 나노선 66.30 N/m보다 완전히 리튬화된 실리콘 나노선이 16.98 N/m으로 상대적으로 작았다. 실리콘 나노선과 완전히 리튬화된 실리콘 나노선에서 탐침과 표면 사이에 마찰력의 수직항력 의존성과 스캔 속도 의존성을 조사하기 위하여 각 0.5~4.0 Hz와 0.01~200 nN으로 측정했다. 본 연구에서 실리콘과 리튬화된 실리콘의 기계적 성질에 관련된 접착력과 마찰력의 경향성이 보여졌고 이러한 방향의 연구는 충-방전 동안 리튬화된 나노수준의 영역의 화학적 맵핑에 응용성을 보여준다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.239-240
• /
• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• 대한화학회지
• /
• 제38권12호
• /
• pp.898-907
• /
• 1994

킬레이트제로 zinc diethyldithiocabamate $[Zn(DDC)_2]$를 사용하여 해수중 흔적량 무기수은(Ⅱ)의 용매추출에 관하여 연구하였다. $Zn(DDC)_2$는 추출과정동안 산성 수용액에서 DDC-의 안정도를 유지하여 준다. 본 실험실에서 NaDDC와 $ZnSO_4$로부터 $Zn(DDC)_2$를 합성하였다. 흔적량 수은을 pH 3.0의 해수 100ml로부터 0.05 M $Zn(DDC)_2$의 클로포름 용액 10ml에 5분간 흔들어 추출하였다. 그리고 클로로포름 유기상으로부터 $Hg(DDC)_2$를 각 3% (v/v)인 질산과 염산의 1:1혼합산 용액 10ml에 25분간 흔들어 역추출하였다. 역추출된 수은을 냉증기 원자흡수 분광광도법으로 정량하였다. 본 추출과정을 해수중 수은의 정량에 응용하였고, 일정량의 수은을 첨가한 해수시료에서 90.0%와 93.3%의 회수율을 보여주었다.

• Composites Research
• /
• 제30권2호
• /
• pp.84-93
• /
• 2017

본 논문에서는 탄화규소 섬유강화 탄화규소 복합재료에 내환경 코팅을 수행한 후, 열 기계적 특성평가에 대한 연구를 수행하였다. 초기분말은 성형공정도중 흐름성을 좋게 하기 위해 분무건조법으로 구형의 분말을 제조하였다. 내환경 코팅재는 복합재료가 산화되거나 고온 수증기와 반응하는 것을 방지하기 위해 행하여 지는데, 본 연구에서는 액상침투법(LSI)으로 제조한 복합재에 실리콘으로 본드코팅을 하고 그 위에 대기플라즈마용사법으로 뮬라이트(mullite)와 무게비로 12% 이터븀 실리케이트(ytterbium silicate)가 혼합된 복합재를 코팅하였다. 대기플라즈마 코팅공정 시 성형변수로서 분무거리를 100, 120 그리고 140 mm로 변화시켰다. 그 후 $1100^{\circ}C$의 온도에서 100시간동안 유지하는 실험과 $1200^{\circ}C$의 온도에서 열충격을 가하는 싸이클을 3000회 반복하였다. 열내구성 시험동안 계면 박리는 일어나지 않았지만, 현저한 균열들이 코팅층 내에서 발견되었다. 균열밀도와 균열의 길이는 코팅도중의 분무거리에 의존하여 변화하였다. 열 내구성 시험 후, 압흔 시험을 통해 기계적 열화거동을 분석하였는데, 시험의 방식이나 조건들이 하중-변위 곡선의 거동에 영향을 주었다.

• 한국식품과학회지
• /
• 제43권1호
• /
• pp.30-38
• /
• 2011

대부분의 고분자 분쇄 처리는 WVP에 영향을 주지 않았고, 일부 조건에서 WS를 개선시켰으나 그 개선 정도가 변수 크기와 직접적으로 관계되지 않았다. 인장특성의 경우에도 대부분의 처리들에 의해 개선되지 않았으며, 초음파 처리의 경우에는 오히려 인장특성을 저하시키기도 하였다. 고분자 분쇄가 DMM 필름의 특성에 영향을 미칠 것이라고 가설을 세웠지만 향 프로파일을 제외한 DMM 필름의 특성들이 본 연구에서 사용된 조건에서의 고분자 분쇄 처리에 의해 대체적으로 크게 영향을 받지 않았다. 또한 필름의 물리적 특성의 변화에 미치는 그 영향 정도가 고분자 분쇄의 공정 변수 크기에 의해 결정될 것이라고 예상했지만, 초음파와 방사선으로 처리된 탈지 겨자씨 필름은 공정 변수의 크기와 필름의 특성들 간에 상관관계가 없었다는 것을 알아내었다. 이것은 아마도 순수한 단일 생고분자로 구성된 필름의 고분자 네트워크와 복합 생고분자로 구성된 농산물 가공 부산물인 탈지 겨자씨 필름의 고분자 네트워크의 차이 때문이라고 사려된다. 이 연구의 결과를 통해 단일 생고분자 필름의 특성 개선을 위해 사용되는 고분자 분쇄 기술과 처리 변수들의 값들이 복합 생고분자인 탈지 겨자씨 필름에는 그 필름의 특성 개선에 효율적으로 적용되지 않는다는 것이 규명되었다. 이 결과는 다른 복합 생고분자(농산물 가공 부산물)로 가식성 필름을 제작 시 본 연구에 사용된 고분자 분쇄 처리들이 그 필름의 물리적 특성들을 개선하는데 효과적이지 않을 수 있다는 가능성을 말해주기도 한다. 차후 탈지 겨자씨 필름의 특성을 개선하기 위해서 다른 고분자분쇄 기술(예, high pressure homogenization)을 이용해보거나 composite 필름을 제조할 수 있을 것이다.

• 한국환경보건학회지
• /
• 제27권3호
• /
• pp.71-80
• /
• 2001

Blood and urine mercury level of three workers were monitored during 60~80 days after high exposure to mercury at the silver refining plant. Mercury was used to form silver-mercury amalgam from plating sludge. Workers were exposed to mercury about 70 days at the several processes, such as hand held weaving, vibration table, and heating from the furnace. mercury was analysed by atomic absorption spectroscopy-vapor generation technique. Recovery from the biological sample was 95.51% and pooled standard deviation was 0.033. At the time of study, there was no work at the workplace. So, airborne mercury concentration was measured with area sampling 5 days after the work, ranged from 0.1459 to 1.2351 mg/㎥(Arithmatic mean 0.4711 mg/㎥, Geometric mean 0.3566 mg/㎥) at the inside of the plant, that is far above the ACGIH's TLV(0.025 mg/㎥) and ranged from 0.0073 to 0.0330 mg/㎥ at the outdoor. Blood mercury levels at the beginning of the monitoring were 4~14 times greater than the American Conference of Governmental Industrial Hygienists Biological Exposure Index(ACGIH BEI, 15 ug/L). Blood mercury levels were decreased logarithmically, that is, rapidly at the high level and slowly at the low level but sustained above the level of the ACGIH BEI 60~80 days after the work. Urine mercury levels at the beginning of the monitoring were 8~16 times greater than the ACGIH BEI(35 ug/g creatinine). Urine mercury levels were decreased logarithmically, but correlation between urine level and off-days were lower than those of blood. Decreasing pattern of blood mercury levels were little affected than that of urine levels when the chelating agent, D-penicillamine, was administered. There was correlation between blood mercury level and urine mercury level(0.81~0.83) but it didn\`t mean that the highest blood mercury level corresponded the highest urine mercury level. In our study, Case 1 always shows the highest level in urine but case 3 always shows the highest level in blood. Creatinine correction represented better correlations between urine mercury levels and blood levels, and between urine levels and off-days rather than by urine volume. Spot urine sampling had a wide variation than that of whole day urine sampling. So, We recommend spot urine sampling for screening and whole day urine sampling for exact diagnosis.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
• /
• pp.127.1-127.1
• /
• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.642-642
• /
• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Composites Research
• /
• 제29권4호
• /
• pp.194-202
• /
• 2016

이차원 구조의 탄소 결합체인 그래핀은 뛰어난 물리적, 화학적 특성으로 인해 미래 전자 소자의 소재로 크게 각광을 받고 있는 물질이다. 따라서, 소자에서 사용된 기판이 그래핀의 물리적 특성에 끼치는 영향에 대한 이해는 그래핀의 응용에 있어서 필수적이며, 그에 대한 연구를 수행하였다. 니켈 (111)과 (100) 결정면에서 각각 성장한 그래핀과 니켈 기판의 상호작용에 대한 연구를 수행함과 동시에, 산화규소 기판으로 전사한 후, 기판과 그래핀과의 상호작용을 라만 분광법을 이용하여 연구하였다. 니켈 기판에서 성장한 그래핀은 기판의 면 방향과 상관없이 기판으로부터 전하의 이동에 따른 도핑효과는 발견되지 않았으며, 산화규소 기판 또한 도핑효과는 없었다. 니켈 기판과 그래핀 사이의 결합력이 그래핀과 산화규소 기판과의 결합력합보다 더 큰 것으로 분석이 되었으며, 니켈에서 성장한 그래핀은 기판의 영향을 받아 수축되어 있었고, 니켈 (100) 면에서는 그래핀이 엇맞음 성장하였음을 확인하였다. 마지막으로, 니켈 (111), (100) 면에서 성장한 그래핀을 산화 규소 기판으로 전사하면 서로 다른 파수 값에서 2D band의 픽이 관측되었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.221-221
• /
• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.