• Journal of Environmental Science International
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• v.21 no.8
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• pp.891-899
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• 2012

The chlorination pattern of naphthalene vapor when passed through a 1 cm particle bed of 0.5% (mass) copper (II) chloride ($CuCl_2$) mixed with silicon dioxide ($SiO_2$) was studied. Gas streams consisting of 92% (molar) $N_2$, 8% $O_2$ and 0.1% naphthalene vapor were introduced to an isothermal flow reactor containing the $CuCl_2/SiO_2$ particle bed. Chlorination of naphthalene was studied from 100 to $400^{\circ}C$ at a gas velocity of 2.7 cm/s. Mono through hexachlorinated naphthalene congeners were observed at $250^{\circ}C$ whereas a broader distribution of polychlorinated naphthalenes (PCNs) including hepta and octachlorinated naphthalenes was observed at $300^{\circ}C$. PCN production was peak at $250^{\circ}C$ with 3.07% (molar) yield, and monochloronaphthalene (MCN) congeners were the major products at two different temperatures. In order to assess the effect of a residence time on naphthalene chlorination, an experiment was also conducted at $300^{\circ}C$ with a gas velocity of 0.32 cm/s. The degree of naphthalene chlorination increased as a gas velocity decreased.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.56-60
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• 2000

Cube texture를 갖는 Ni기판위에 MOCVD(Metal Chemical Vapor Deposition)를 이용하여 NiO, CeO$_2$, YBCO 박막을 제조하였다. NiO(200)와 CeO$_2$(200) buffer layer는 450${\sim}$470$^{\circ}$C에서 10분간 MOCVD방법으로 (100)<001>Ni 기판위에 직접 증착하였다. 제조된 NiO, CeO$_2$ buffer layer는 조직이 치밀하며 표면의 상태가 매우 좋으며 Ni기판 위에 epitaxial하게 성장하였다. NiO는 Ni기판과 NiO<100>//Ni<100>의 방위관계를 가지고 성장하였으며, CeO$_2$는 증착조건에 따라 CeO$_2$ <100>//Ni<100> 및 CeO$_2$ <110>//Ni<100> 의 방위관계를 가지고 성장하였다. 증착된 NiO막과 CeO$_2$막에서 균열은 발생하지 않았다. MOCVD법으로 표면에 biaxial texture를 갖는 ceramic buffer를 증착시킨 NiO/Ni및 CeO$_2$/Ni 기판위에 YBCO박막을 MOCVD법으로 제조하였다. YBCO막은 기판온도 800$^{\circ}$C,증착압력 10torr, 산소분압을 0.7torr로 하여 10분간 행하였다. 공급원료의 조성에 따라 YBCO의 막의 texture와 형성되는 상이 변화되었다. NiO/Ni및 CeO$_2$/Ni 기판 위에 증착된 YBCO막은 c축 배향성을 가지고 성장하였으며, -scan 및 ${\varphi}$ -scan으로 측정한 (500)면의 in-plane과 (110)면의 out-of-plane의 FWHM(Full Width Half Maximum)값은 각각 10$^{\circ}$ 미만으로 우수하였다.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.701-706
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• 2008

Nano-sized nickel powders were prepared by evaporating the bulk nickel metarial using transferred arc thermal plasma. Nitrogen gases are easily dissociated to atomic nitrogen in thermal plasma and they are quickly dissolved in molten nickel. Super-saturated atomic nitrogen in molten nickel is recombined to nitrogen gas because of the relatively low temperature of nickel surface. Generally, the recombine reaction of atomic nitrogen is exothermic, so bulk nickel is quickly evaporated to nickel vapor due to the thermal energy of recombine reaction. The particle size of nickel powder was controlled by $N_2$ used as the diluting gas. It was observed that as the diluting gas flow rate was increase, the particle size was decreased and the particle size distribution was narrowed. The average particle size at 250 l/min of the diluting gas was 202 nm analyzed by means of the particle size analyzer (PSA).

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2019.05a
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• pp.69-69
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• 2019

The distillation of liquid cathode is necessary to separate cadmium from the actinide elements in the pyroprocessing since the actinide deposits are dissolved or precipitated in a liquid cathode. It is very important to avoid a splattering of cadmium during evaporation due to the high vapor pressure. Several methods have been proposed to lower the splattering of cadmium during distillation. One of the important methods is an installation of crucible cover on the distillation crucible. A multi-layer porous round cover was proposed to avoid a cadmium splattering in our previous study. In this study, the effect of crucible cover on the cadmium distillation was examined to develop a splatter shield. Various surrogates were used for the actinides in the cadmium. The surrogates such as bismuth, zirconia, and tungsten don't evaporate at the operational temperature of the Cd distiller due to their low vapor pressures. The distillation experiments were carried out in a crucible equipped with cover and in a crucible without cover. About 40 grams of Cd was distilled at a reduced pressure for two hours at various temperatures. The mixture of the cadmium and the surrogate was heated at $470{\sim}620^{\circ}C$. Most of the bismuth remained in the crucible equipped with cover after distillation under $580^{\circ}C$ for two hours, whereas small amount of bismuth decreased in the crucible without cover above $580^{\circ}C$. The liquid bismuth escaped with liquid cadmium drop from the crucible without cover. It seems that the crucible cover played a role to prevent the splash of the liquid cadmium drop. The effect of the cover was not clear for the tungsten or zirconia surrogate since the surrogates remained as a solid powder at the experimental temperature. From the results of this work, it can be concluded that the crucible cover can be used to minimize the deposit loss by prevention of escape of liquid drop from the crucible during distillation of liquid cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.395-395
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• 2008

Water-assisted synthesis of carbon nanotubes (CNTs) has been intensively studied in recent years, reporting that water vapor enhances the activity and lifetime of metal catalyst for the CNT growth. While most of these studies has been focused on the supergrowth of CNTs at high temperature, rarely has the similar approach been made for the CNT synthesis at low temperature. Since the metal catalyst are much less active at lower temperature, we expect that the addition of water vapor may increase the activity of catalyst more largely at lower temperature. We synthesized multi-walled CNTs at temperature as low as $360^{\circ}C$ by introducing water vapor during growth. The water addition caused CNTs to grow ~3 times faster. Moreover, the water-assisted growth prolonged the termination of CNT growth, implying the enhancement of catalyst lifetime. In general, a thinner catalyst layer is likely to produce smaller-diameter, longer CNTs. In a similar manner, the water vapor had a greater effect on the growth of CNTs for a smaller thickness of catalyst in this study. To figure out the role of process gases, CNTs were grown in the first stage and then exposed to each of process gases in the second stage. It was shown that water vapor and hydrogen did not etch CNTs while acetylene led to the additional growth of CNTs even faster in the second stage. As-grown CNTs were characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM), and Raman spectroscopy.

• Nuclear Engineering and Technology
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• v.28 no.2
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• pp.103-117
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• 1996

A mathematical model of vapor explosion propagation is presented. The model predict two-dimensional, transient flow fields and energies of the four fluid phases of melt drop, fragmented debris, liquid coolant and vapor coolant by solving a set of governing equations with the relevant constitutive relations. These relations include melt fragmentation, coolant-phase-change, and heat and momentum exchange models. To allow thermodynamic non-equilibrium between the coolant liquid and vapor, an equation of state for oater is uniquely formulated. A multiphase code, TRACER, has been developed based on this mathematical formulation. A set of base calculations for tin/water explosions show that the model predicts the explosion propagation speed and peak pressure in a reasonable degree although the quantitative agreement relies strongly on the parameters in the constitutive relations. A set of calculations for sensitivity studies on these parameters have identified the important initial conditions and relations. These are melt fragmentation rate, momentum exchange function, heat transfer function and coolant phase change model as well as local vapor fractions and fuel fractions.

• Journal of Radiation Protection and Research
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• v.17 no.1
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• pp.1-10
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• 1992

A number of investigators have reported the formation of the radiolytic ultrafine particles produced by the interaction of ionizing radiation with water vapor. Previous studies have suggested that a very high localized concentration of the OH radical produced by the radiolysis of water can react with trace gas like organic vapors and produce lower vapor pressure compounds that can then nucleate. In order to determine water vapor dependence of the active, positively charged, first radon daughter(Po-218), an experiment was conducted using a well-controlled radon chamber. The activity size distribution of the radon daughter in the range of 0.5-100nm was measured using the parallel graded wire screens system. Measurements were taken for different relative humidity. The resultant activity size distributions were analyzed. The addition of water vapor to the radon carrier gases resulted in the formation of ultrafine particles by OH radicals formed by radon radiolysis. It may be due to the neutralization of charged Po-218 ion with water vapor through the radio lysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.298.1-298.1
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• 2016

Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Carbon letters
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• v.13 no.4
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.