• Journal of the Korean Geographical Society
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• v.47 no.5
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• pp.755-774
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• 2012

The main objective of the study is to propose GIS-based methods to assess the population distribution criteria for undesirable facilities such as nuclear power plants. First of all, a review of the relevant criteria was conducted for the official documents compiled by such institutions as IAEA (International Atomic Energy Agency), U.S. NRC (Nuclear Regulatory Commission), and some national institutes including the Korea Institute of Nuclear Safety. It is informed from the review that the fundamental principle underlying the various criteria is to maximize the distance between a plant and the nearest population center. It is realized that two interrelated GIS-based techniques need to be devised to put the principle into practice; sophisticated ways of representing population distribution and identifying population centers. A dasymetric areal interpolation is proposed for the former and cell-based and area-based critical density methods are introduced. Grid-based population distributions at various spatial resolutions are created by means of the dasymetric areal interpolation. By applying the critical density methods to the gridded population distribution, some population centers satisfying the population size and density criteria can be identified. These methods were applied to the case of the Gori-1 nuclear power plant and their strengths and limitations were discussed. It was revealed that the assessment results could vary depending upon which method was employed and what values were chosen for various parameters. This study is expected to contribute to foster the applications of methods and techniques developed in geospatial analysis and modeling to the site selection and evaluation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Journal of environmental and Sanitary engineering
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• v.9 no.1
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• pp.53-61
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• 1994

Sungnam city, as a major satellite town, is located in the southeast of Seoul. Atmospheric conditions are so stable that air pollutants from various emissions are tend to resist change because Sungnam city is located in the Namhansansung valley. The industrial distribution of Sungnam city are composed of various manufactories such as foods, fibers, chemicals, machinery and electronics etc. The heavy metal concentrations and size distribution are the most important parameters influencing among the way in which respirable suspended particulate matter interact with the human respiratory system. Respirable suspended particulate matter was collected on glass fiber filters from April 1993 to February 1994 according to particle size using Anderson sampler during 10 days per month at Sungnam city. 6 heavy metals, Fe, Zn, Pb Mn, Cu and Cd, were analyzed by particle size with atomic absorption spectrophotometry . The results could be summarized as follows: 1. The annual arithmetic mean concentration of total suspended particulate was 116.3$\mu $g/m$^{3}$ m', seasonal variation was the highest in spring season(196.5$\mu $g/m$^{3}$) and the lowest in Summer Season(72.9$\mu $g/m$^{3}$). 2. The ratio of airborne particulate concentrations respirable to nonrepairable( Res/Non- Res) of annual arithmetic mean value was 5.8'1, seasonal variation was highest in the spring season(6.3 : 1) and lowest in the summer season(4.6 : 1). 3. During the spring season the shape of the size distribution was trimodal which showed peaks at 3 size groups, which were below of 0.43$\mu $m, 3.3∼4.7$\mu $m and above of 11.0$\mu $g/m$^{3}$ respectively. 4. Respirable suspended particulate matter concentrations of Zn, Pb Cu and Cd were the highest in below of 0.43$\mu $m as follows; 0.517$\mu $g/m$^{3}$, 0.411 $\mu $g/m$^{3}$, 0.062$\mu $g/m$^{3}$ and 0.0310$\mu $g/m$^{3}$ , respectively, Fe and Mn were the highest in the particle size range of 4.7 ∼ 7.0$\mu $m as follows; 2.504$\mu $g/m$^{3}$ and 0.095$\mu $g/m$^{3}$, respectively. 5. The Pt Cd, Zn, Cu, Fe and Mn concentrations of annual arithmetic mean value respirable to non- respirable( Res/Non- Res ) were 33.65, 19.27, 17.74, 10.54, 3.20 and 5.20, respectively.

• Journal of the Korean Society of Food Science and Nutrition
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• v.40 no.6
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• pp.824-831
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• 2011

This study was to investigate 90-day repeated-dose toxicities of 50 kGy irradiated methanol extract powder of red ginseng in ICR mice. The test materials (methanol extract powder of red ginseng with or without 50 kGy irradiation) were administered by gavage to male and female ICR mice at dose levels of 0, 125, 250 and 500 mg/kg/day for 90 days. In the results, no abnormality was observed in mortality, clinical findings, body weight changes, food consumptions, opthalmoscopic findings, necropsy findings and histopathological findings. Although the minor changes in blood and biochemical parameters were observed, they were not dose dependent and not affected by gamma irradiation. In conclusion, 90-day repeated oral dose of the methanol extract powder of red ginseng and 50 kGy irradiated methanol extract powder of red ginseng to ICR mice did not cause apparent toxicological change at the dose of 125, 250 and 500 mg/kg body weight.

• Journal of Microbiology and Biotechnology
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• v.8 no.2
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• pp.158-164
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• 1998

Crystal structural analyses of the API-TLCK complex revealed that the ${\epsilon}$-amino group (NZ) of the lysyl part of TLCK forms hydrogen bonds with OD1 of $Asp^225$ which is a substrate specificity determinant of API, OG of $Ser^214$, O of $Ser^214$, OG1 of $Thr^189$, and O of $Thr^189$ l89/. The ${\beta}$-carboxyl oxygen of $Asp^225$ forms hydrogen bonds with the NE1 of $Trp^182$. From these observations, it is thought that besides $Asp^225$, $Thr^189$, $Ser^214$, and $Trp^182$ may also contribute to the steric specificity for lysine and high proteolytic activity of API. The side-chain hydroxyl groups of $Thr^189$ and $Ser^214$ were removed to elucidate the role of these hydrogen bonds in the $S_1$-pocket. The $k_{cat}$/$K_m$ of T189V, S214A, and T189V.S214A were decreased to 1/4, 1/3, and 1/46, respectively, of the value for native API. The decreased activities were mainly due to the increase of $K_m$. The CD and fluoroscence spectra of the three mutants were similar to those of wild-type API. With regards to the kinetic parameters ($K_i\;and\;k_2$) of mutants for the reaction involving TLCK and DFP, $k_2$decreased by increase of $K_1$ only. These results suggest that the decreased catalytic activity of these mutants is caused by the partial loss of the hydrogen bond network in the $S_1$-pocket. On the other hand, the similarity of enzymatic properties between W182F and the native enzyme suggests that the hydrogen bond between OD2 of $Asp^225$ and NE1 of $Trp^182$ is not directly related to the reaction of $Asp^225$ with the substrate.

• The Journal of the Acoustical Society of Korea
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• v.15 no.6
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• pp.81-89
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• 1996

It is very important for ultrasonic test method to evaluate the integrity of the class I components in nuclear power plants. However, as the rltrasonic test is affected by internal structures and configurations of test materials, backscattering, that is, time invariant noise is generated in large grain size materials. Due to the above reason, the received signal results in low signal to noise(S/N) ratio. Split spectrum processing(SSP) technique is effective to suppress the grain noise. The conventional SSP technique. however, has been applied to unique algorithm. This paper shows that MPO(minimization and polarity threshold) algorithm which two algorithms are applied simulatancously, was utilized, the signal processing time was shorten by using the new constant-Q SSP with the FIR filter which frequency to bandwidth ratio is constant and the optimum parameters were analysed for the signal processing to longitudinal wave and shear wave with the same requirements of inspection on nuclear power plant site. Moreover, the new ultrasonic test instrument, the reference block of the same product form and material specification, stainless stell test specimens and copper test specimens block of the same fabricated for the application of new SSP technique. As the result of experimental test with new ultrasonic test instrument and test specimens, the signal to noise ratio was improved by appying the new SSP technique.

• Analytical Science and Technology
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• v.15 no.2
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• pp.108-114
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• 2002

The new system using a glow discharge atomic emission spectrometer for the direct analysis of solid samples has been developed and characterized. The system was consisted of new glow discharge cell improved previous gas-jet boosted nozzle and radio-frequency power supply. In the case of previous type glow discharge chamber, it had been fitted trace analysis of low alloy steel with low discharge power, because it was to decrease redeposition and increase sample weight loss. But it had a problem that plasma becomes unstale due to increased sample weight loss and redeposition resulting from the high discharge power. Because of being problem of previous glow discharge, it is impossible to analyze using high power. The modified gas-jet boosted glow discharge to solve this problem would improve to be less sample loss rate of modified nozzle than sample loss rate of previous nozzle on the equal discharge condition, and improve to increase stability of plasma. The effect of discharge parameters such as discharge pressure, gas flow rate and power on the sample loss rate, emission intensity has been studied to find optimum discharge conditions. The calibration curves of Fe were obtained with 3 low-alloy samples.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.434-435
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• 2012

Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.