• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.424-424
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• 2009

그라핀은 밴드갭이 없어서 세미메탈의 성질을 띠므로 초고속 RF 소자에는 응용이 가능하지만, 현재 사용되는 반도체 칩에 사용하기가 불가능하다. 그러나 그라핀을 매우 좁은 리본 형태로 만들 경우 밴드갭이 생기고 이에 따라 반도체특성을 뛰게 된다. 이러한 특성은 시뮬레이션을 통해서만 이해되다가 2007년 P. Kim이 그라핀 나노리본의 밴드캡이 리본의 폭이 좁아짐에 따라 증가함을 실험적으로 최초로 발표하였다. 하지만 그라핀을 나노리본형태로 식각 방법에 대해서는 정확히 연구되지 않았다. 따라서 본 연구에서는 $O_2$ plasma ashing 방법을 이용하여 그라핀을 식각하는 방법에 대해 연구하였다. 먼저 Si기판을 initial cleaning 한 후, highly-oriented pyrolytic graphite(HOPG)를 이용하여 기존의 mechanical exfoliation 방식을 통해 그라핀을 형성하였다. Photo-lithography 방법을 통하여 패터닝한 후, 그라핀을 식각하기 위하여 Reactive Ion Etcher (RIE) system을 이용한 $O_2$ plasma ashing을 50 W에서 1 분간 실시하였다. 다시 image reverse photo-lithography 과정과 E-beam evaporator system를 통해서 Al 전극을 형성하여 graphene-FET를 제작하였고, 광학 현미경과 AFM (Atomic force microscope)을 통해 두께를 확인하였다. 본 연구를 통하여 $O_2$ plasma ashing을 이용하여 쉽게 그라 E을 식각할 수 있음을 확인 하였으며, 제작된 소자의 전기적 특성에 대해서 현재 실험중에 있다.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• Applied Microscopy
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• v.42 no.3
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• pp.129-135
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• 2012

In this study, the changes in hair quality before and after Magic straight perm have been evaluated through a hair damage measurement method. For this, a healthy high school student's (age18 years) wavy hair was selected and permed on the left and right sides. Then, the changes caused by physical methods which were applied during the fl at iron-based Magic straight perm were evaluated based on the hair damage measurement method before and after the Magic straight perm. According to the protein release test after the Magic straight perm, 1.26% in average and 0.14% was observed in Cool Magic straight perm sample. In a field emission scanning electron microscopy (FE-SEM) test, saw teeth-shaped partial desquamation of cuticle cells and impurities were observed in the warm-treated hair sample. In atomic force microscope (AFM), line-profile is a method to represent roughness data on hair. According to analysis on 3-dimensional (3D) images, the hair with Cool Magic straight perm was lower than the hair with Warm Magic perm in terms of the color change of 3D images. In addition, vertical changes were observed in the hair with Cool Magic perm. As a result, irregular surface roughness was observed. This study proposed a method to minimize hair damage by cooling down the heat with the cool hair straightener as soon as the Warm Magic was finished.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1110-1114
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• 2003

We have investigated the generation of pretilt angle for a nematic liquid crystal (NLC) alignment with rubbing alignment method on polyimide surfaces using thin plastic substrates. It was found that monodomain alignment of NLC is obtained with rubbing alignment method on polyimide surfaces using thin plastic substrates. The NLC pretilt angles generated are about 3$^{\circ}$ by the rubbing alignment method on thin plastic substrates, However, the pretilt angle are at about 1.7$^{\circ}$ lower on the glass substrate than on thin plastic substrate. We obtain that AFM (atomic force microscope) image of rubbed PI surface with polymer film has formed the micro-groove structure at the low curring temperature (120$^{\circ}C$). However, no grooves are obtained on the glass substrate at the same temperature. It is considered that this alignment may be attributed to roughness of micro-groove substrate. The tilt angle increases with increasing baking temperature for making polyimide layer using glass substrate. It was concluded that the pretilt angle in the polyimide surface is attributable to the increasing of imidization rato.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.661-667
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• 2004

The control of tilt angle for nematic liquid crystal (NLC) with negative and positive dielectric anisotropy on the rubbed homeotropic polyimide (PI) using baking method by hot plate equipment was investigated. LC tilt angle decreased with increasing baking temperature and time. Especially, the low LC tilt angle of positive type NLC (Δ$\varepsilon$＞0) on the rubbed homeotropic PI surface by increasing temperature and time was measured. The tilt angle of positive type NLC(Δ$\varepsilon$＞0) is smaller than that of the negative type (Δ$\varepsilon$＞0) on rubbed PI with increasing baking temperature and time. We consider that the tilt angle of NLC is decreased due to increasing the steric interaction between horizon component of permittivity $\varepsilon$ = of NLC and the stress of polymer side chain by high temperature. As the increase of baking temperature, we obtain that AFM (atomic force microscope) image of rubbed PI surface using Hot-plate method has formed better solid micro-groove structure than oven method.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.34-37
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• 2004

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.297-297
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• 2012

양자점은 공간적으로 세 방향 모두 전하의 운동을 제한하는 0차원 구조로 불연속적인 상태 밀도를 가진다. 이런 양자점의 특성은 광통신용 소자, 레이저 다이오드 등과 같은 광학 및 전자 장치에 응용될 수 있기 때문에 많은 주목을 받아 활발히 연구되어 왔다. 본 연구에서는 MBE 장비를 이용하여 GaAs 기판위에 InAs 양자점을 성장시키는 동안 As의 공급을 임의로 차단시켜 양자점 형성 조건을 변화시킨 시료들의 광학적 특성을 Photoluminescence (PL) 와 Time-resolved PL (TRPL) 실험을 이용하여 분석하였다. GaAs (001) 기판 위에 GaAs buffer layer를 $610^{\circ}C$에서 성장한 후, $470^{\circ}C$에서 As 공급 조건 변화에 따른 InAs 양자점을 성장하였다. 양자점을 성장한 후 GaAs cap layer를 $610^{\circ}C$에서 성장하였다. InAs 양자점 시료들은 In을 20초 공급하는 동안 As의 공급과 차단을 각각 1초, 2초, 3초의 일정한 간격으로 반복하였다. 10 K에서 각각의 시료들의 PL을 측정한 결과 As 공급과 차단을 2초씩 반복한 T2시료에서 PL 세기가 가장 좋게 나타났으며, 3초씩 반복한 T3시료에서 가장 나쁘게 나타났다. PL 피크는 공급과 차단을 1초씩 반복한 T1 시료가 1.23 eV, T2 시료가 1.24 eV, T3 시료가 1.26 eV에 나타났으며, As의 차단시간이 증가함에 따라 PL 피크가 높은 에너지로 이동함을 보였다. 발광파장에 따른 PL 소멸은 파장이 증가함에 따라 점차 느려지다가 PL 피크 근처에서 가장 느린 소멸곡선을 보이고, 파장이 더 증가하였을 때 점차 빠르게 소멸하였다. As 공급 조건의 변화에 따라 InAs 양자점의 크기와 밀도, 모양 등이 변하는 것을 Atomic Force Microscope (AFM) image를 통하여 확인하였으며, PL과 TRPL을 이용하여 InAs 양자점의 광학적 특성을 분석하였다.

• Journal of Microbiology and Biotechnology
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• v.15 no.2
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• pp.254-258
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• 2005

We have conducted in vitro reconstitution study of ferritin from its subunits FerH and FerL. For the reconstitution, FerH was produced from an expression vector construct in Escherichia coli and was purified from a heat treated cell extract by using one-step column chromatography. FerL was expressed as inclusion bodies. The denatured form of FerL was obtained by a simple washing step of the inclusion bodies with 3 M urea. The reconstitution experiment was conducted with various molar ratios of urea-denatured FerH and FerL to make the ferritin nanoparticle with a controlled composition of FerH and FerL. SDS-PAGE analysis of the reconstituted ferritins revealed that the reconstitution required the presence of more than 40 molar$\%$ of FerH in the reconstitution mixture. The assembly of the subunits into the ferritin nanoparticle was confmned by the presence of spherical particles with diameter of 10 nm by the atomic force microscopic image. Further analysis of the particles by using a transmission electron microscope revealed that the reconstituted particles exhibited different percentages of population with dense iron core. The reconstituted ferritin nanoparticles made with molar ratios of [FerH]/[FerL]=l00/0 and 60/40 showed that 80 to $90\%$ of the particles were apoferritin, devoid of iron core. On the contrary, all the particles formed with [FerH]/[FerL]=85/ 15 were found to contain the iron core. This suggests that although FerH can uptake iron, a minor portion of FerL, not exceeding $40\%$ at most, is required to deposit iron inside the particle.

• Journal of Periodontal and Implant Science
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• v.43 no.4
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• pp.198-205
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• 2013

Purpose: The aim of this study was to evaluate the surface properties and biological response of an anodized titanium surface by cell proliferation and alkaline phosphatase activity analysis. Methods: Commercial pure titanium (Ti) disks were prepared. The samples were divided into an untreated machined Ti group and anodized Ti group. The anodization of cp-Ti was formed using a constant voltage of 270 V for 60 seconds. The surface properties were evaluated using scanning electron microscopy, X-ray photoelectron spectroscopy, and an image analyzing microscope. The surface roughness was evaluated by atomic force microscopy and a profilometer. The contact angle and surface energy were analyzed. Cell adhesion, cell proliferation, and alkaline phosphatase activity were evaluated using mouse $MC_3T_3-E_1$ cells. Results: The anodized Ti group had a more porous and thicker layer on its surface. The surface roughness of the two groups measured by the profilometer showed no significant difference (P>0.001). The anodized Ti dioxide ($TiO_2$) surface exhibited better corrosion resistance and showed a significantly lower contact angle than the machined Ti surface (P>0.001). Although there was no significant difference in the cell viability between the two groups (P>0.001), the anodized $TiO_2$ surface showed significantly enhanced alkaline phosphatase activity (P<0.001). Conclusions: These results suggest that the surface modification of Ti by anodic oxidation improved the osteogenic response of the osteoblast cells.