• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Journal of Periodontal and Implant Science
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• v.42 no.3
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• pp.81-87
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• 2012

Purpose: The characteristics of oxidized titanium (Ti) surfaces varied according to treatment conditions such as duration time and temperature. Thermal oxidation can change Ti surface characteristics, which affect many cellular responses such as cell adhesion, proliferation, and differentiation. Thus, this study was conducted to evaluate the surface characteristics and cell response of thermally treated Ti surfaces. Methods: The samples were divided into 4 groups. Control: machined smooth titanium (Ti-S) was untreated. Group I: Ti-S was treated in a furnace at $300^{\circ}C$ for 30 minutes. Group II: Ti-S was treated at $500^{\circ}C$ for 30 minutes. Group III: Ti-S was treated at $750^{\circ}C$ for 30 minutes. A scanning electron microscope, atomic force microscope, and X-ray diffraction were used to assess surface characteristics and chemical composition. The water contact angle and surface energy were measured to assess physical properties. Results: The titanium dioxide ($TiO_2$) thickness increased as the treatment temperature increased. Additional peaks belonging to rutile $TiO_2$ were only found in group III. The contact angle in group III was significantly lower than any of the other groups. The surface energy significantly increased as the treatment temperature increased, especially in group III. In the 3-(4,5-Dimethylthiazol- 2-yl)-2,5-diphenyltetrazolium bromide assay, after 24 hours of incubation, the assessment of cell viability showed that the optical density of the control had a higher tendency than any other group, but there was no significant difference. However, the alkaline phosphatase activity increased as the temperature increased, especially in group III. Conclusions: Consequently, the surface characteristics and biocompatibility increased as the temperature increased. This indicates that surface modification by thermal treatment could be another useful method for medical and dental implants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.196-201
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• 2014

We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.5
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• pp.240-246
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• 2002

$TiO_2$ films on soda-lime-silica glasses were prepared by spin coating-pyrolysis process using titanium naphthenate as a starting material. As-deposited films were pyrolyzed at $500^{\circ}C$ for 10 min in air and annealed at 500, 550 and $600^{\circ}C$ for 30 min in air. Crystallinity of the film was investigated by X-ray diffraction analysis. A field emission-scanning electron microscope and an atomic force microscope were used for characterizing the surface morphology and the surface roughness of the film. After annealing at 550 and $600^{\circ}C$, the X-ray diffraction patterns consist of only anatase peak. Films annealed at 500 and $550^{\circ}C$ exhibited flat surfaces. While with the increase in annealing temperature to $600^{\circ}C$, the $TiO_2$ film showed abnormal growth of three-dimensional needle-shaped grains. For all samples, high transmittance, above 90 % at 500 nm, was obtained at visible range. To investigate photocatalytic properties, IR absorbance associated with the C-H stretching vibrations of a thin solution-cast film of stearic acid under 365 nm (2.4 mW/$\textrm{cm}^2$) UV irradiation was estimated.

• Membrane Journal
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• v.18 no.4
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• pp.282-293
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• 2008

Partially sulfonated poly(aryl ether sulfone) membranes were prepared from the sulfonated sulfone monomer, which was synthesized by a nucleophilic substitution, non-sulfonated monomers and potassium carbonate by a direct polymerization method and a subsequent solution casting technique with mixed solvents of N-methyl-2-pyrrolidone (NMP) and dimethylacetamide (DMAc). To investigate the effect of mixed solvent, the volume ratios of NMP and DMAc were varied in the range of $0{\sim}100%$ and the degrees of sulfonation of the copolymers were fixed as 50%. The surface properties of the resulting membranes were examined by scanning electron microscope (SEM) and atomic force microscope (AFM), and a comparative study of the morphology changes and the physicochemical properties such as proton conductivity and methanol permeability was achieved. It was found that proton conductivities depend on the volume ratio of NMP-DMAc mixed solvents, and the proton conductivity determined at the condition of $25^{\circ}C$ and 100% relative humidity was $1.38{\times}10^{-1}\;S/cm$ for the membrane prepared in the 50:50 v/v-% of NMP : DMAc mixed solvent.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.80-80
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• 2010

전자제품의 소형화, 경량화, 고집적화가 심화됨에 따라 전자제품을 구성하는 회로의 미세화 또한 요구되고 있다. 이러한 요구는 경성회로기판 (rigid printed circuit board, RPCB) 뿐만 아니라 연성회로기판 (flexible printed circuit board, FPCB) 에도 적용되고 있으며 이에 대한 많은 연구 또한 이루어지고 있다. 연성회로기판은 일반적으로 절연층을 이루는 폴리이미드 (polyimide, PI)와 전도층을 이루는 구리로 이루어져 있다. 폴리이미드는 뛰어난 열적 화학적 안정성, 우수한 기계적 특성, 연속공정이 가능한 장점을 가지고 있으나, 고온다습한 환경하에서 높은 흡습성으로 인해 전도층을 이루는 구리와의 접합특성이 저하되는 단점 또한 가지고 있다. 또한 전도층을 이루는 구리는 고온다습한 환경하에서 산화 발생이 용이하기 때문에 접합특성의 감소를 야기할 수 있다. 따라서 본 연구에서는 고온다습한 조건하에서 sputtering and plating 공정을 통해 순수 Cr seed layer를 가지는 연성회로기판의 seed layer의 두께와 시효시간의 변화로 인해 발생하는 접합특성의 변화를 관찰하고 분석하였다. 본 연구에서는 두께 $25{\mu}m$의 일본 Kadena사(社)에서 제작된 폴리이미드 상에 sputtering 공정을 통해 순수 Cr으로 이루어진 각각 두께 100, 200, $300{\AA}$의 seed layer를 형성한 후 전해도금법을 이용, 두께 $8{\mu}m$의 구리 전도층을 형성한 시료를 사용하였다. 제작된 시료는 고온다습한 환경하에서의 접합 특성의 변화를 관찰하기 위하여 $85^{\circ}C$/85%RH 항온항습 조건하에서 각각 24, 72, 120, 168시간 동안 시효처리 한 후, Interconnections Packaging Circuitry (IPC) 규격에 의거하여 접합강도를 측정하였다. 시료의 전도층은 폭 3.2mm 길이 230mm의 패턴을 가지도록, 절연층은 폭 10mm, 길이 230mm으로 구성되었으며 이를 50.8mm/min의 박리 속도로 각 시편당 8회의 $90^{\circ}$ peel test를 실시하였다. 파면의 형상과 화학적 조성을 분석하기 위해 SEM (Scanning electron microscope)과 EDS (Energy-dispersive X-ray spectroscopy)를 사용하였으며, 파면의 조도 측정을 위해 AFM (Atomic force microscope)을 사용하였다. 또한 계면의 화학적 결합상태를 분석하기 위해 XPS (X-ray photoelectron spectroscopy)를 통해 파면을 관찰 분석하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.45-50
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• 2015

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.262-267
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• 2009

Superhydrophobic $TiO_2$ thin films were successfully fabricated on a glass substrate by wet process. Layer-by-layer (LBL) deposition and liquid phase deposition (LPD) methods were used to fabricate the thin films of micro-nano complex structure with a high roughness. To fabricate superhydrophobic $TiO_2$ thin films, the (PAH/PAA) thin films were assembled on a glass substrate by LBL method and then $TiO_2$ nanoparticles were deposited on the surface of (PAH/PAA) thin film by LPD method, Subsequently, hydrophobic treatment using fluoroalkyltrimethoxysilane (FAS) was carried out on the surface of prepared $TiO_2$ thin films. The $TiO_2$ thin film fabricated with 45 minutes immersion time on $(PAH/PAA)_{10}$ showed the RMS roughness of 65.6nm, water contact angel of $155^{\circ}$ and high transmittance of above 80% (>650nm in wavelength) after the hydrophobic treatment. The Surface morphologies, optical properties and contact angel of prepared thin films with different experimental conditions were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.102-108
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• 2008

We have studied the properties of Ag/undoped ZnO (ZnO) multilayer thin films deposited on glass substrate by the facing targets sputtering method. In an attempt to find out the optimum conditions of the Ag thin film, which would be coated on the ZnO thin film, we investigated the changes of sheet resistance, transmittance and surface morphology as a function of deposition times and the substrate temperature. The electrical and optical characteristics of Ag/ZnO multilayers were evaluated by a four-point probe, a UV/VIS spectrometer with a spectral range of 390-770 nm, a X-ray Diffractometer (XRD), an atomic force microscope (AFM) and a Field Emission Scanning Electron Microscope (SEM), respectively. We were able to prepare the Ag/ZnO multilayer thin film with sheet resistance of 9.25 $\Omega/sq.$ and transmittance of over 80% at 550nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.244-245
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• 2010

최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 발광다이오드 및 태양전지 연구가 활발히 진행되고 있다. GaN는 높은 전자 이동도와 높은 포화 속도 등의 광전자 소자에 유리한 특성을 가지고 있으나, 고 인듐 함유량과 막질의 우수한 특성을 동시에 구현하는 것은 매우 어렵다. 이를 극복하기 위한 방법으로써 선택 영역 박막 성장법(Selective Area Growth)은 마스크 패터닝을 통해 제한된 영역에서만 박막을 성장하는 방법으로써 GaN의 막질을 향상 시킬 수 있는 방법으로 주목받고 있다. 본 논문에서는 대면적 기판에서 GaN의 막질 향상뿐만 아니라 고인듐 InGaN 박막 성장을 위하여 서브마이크로미터 주기와 크기를 갖는 홀 패턴을 포토리소그라피 공정 최적화를 통해 구현할 수 있는 방법에 대해 논의한다. 그림. 1은 사파이어 기판 위에 선택 영역 박막 성장법을 이용하여 성장한 n-GaN/활성층/p-GaN의 구조를 나타낸 그림이다. 이를 통하여 서브마이크로미터 스케일의 반극성 InGaN면 위에 높은 인듐 함유량을 가지면서도 우수한 특성을 갖는 박막을 얻을 수 있다. 본 실험을 위하여 사파이어 기판 위에 SiO2를 증착한 후 포토레지스트(AZ5206)을 도포하고 포토리소그라피 공정을 진행하여 2um 크기 및 간격을 갖는 패턴을 형성했다. 그림. 2는 AZ5206에 UV를 조사(5초)하고 현상(23초)한 패턴을 윗면(그림. 2(a))과 $45^{\circ}$ 기울인 면(그림. 2(b)) 에서 본 SEM(Scanning Electron Microscope) 사진이다. 이를 통해 약 2.2um의 홀 패턴이 선명하게 형성 됨을 볼 수 있다. 그 후 수백나노 직경의 홀을 만들기 위해서 리플로우 공정을 수행한다. 그림. 3은 리플로우 온도에 따른 패턴의 홀 모양을 AFM(Atomic Force Microscope)을 이용하여 측정한 표면의 사진이다. 이를 통해 2차원 평면에서 리플로우 온도 및 시간에 따른 변화를 볼 수 있다. 그림.3의 (a)는 리플로우 공정을 진행하기 전 패턴이고, (b)는 $150^{\circ}C$에서 2분, (c)는 $160^{\circ}C$에서 2분 (d)는 $170^{\circ}C$에서 2분 동안 리플로우 공정을 진행한 패턴이다. $150^{\circ}C$와 $160^{\circ}C$에서는 직경에 큰 변화가 없었고, $160^{\circ}C$에서는 시료별 현상 시간 오차에 따라 홀의 크기가 커지는 경향이 나타났다. 그러나 $170^{\circ}C$에서 2분간 리플로우 한 시료 (그림. 3(d))의 경우는 홀의 직경이 ~970nm 정도로 줄어든 것을 볼 수 있다. 홀의 크기를 보다 명확히 표현하기 위해 그림.3에 대응시켜 단면을 스캔한 그래프가 그림.4에 나타나 있다. 그림.4의 (a) 및 (b)의 경우 포토레지스트의 높이 및 간격이 일정하므로, 리플로우에 의한 영향은 거의 없었다. 그림. 4(c)의 경우 포토레지스트의 높이가 그림.4(a)에 비해 ~25nm 정도 낮은 것으로 볼 때, 과도 현상 및 약간의 리플로우가 나타났을 가능성이 크다. 그림. 4(d)에서는 ~970nm의 홀 크기가 나타나서 본 연구에서 목표로 하는 나노 홀 크기에 가장 가까워짐을 확인할 수 있었다. 따라서, $170^{\circ}C$ 이상의 온도와 2분 이상의 리플로우 시간 조건에서 선택 영역 성장을 위한 나노 홀 마스크의 크기를 제어할 수 있음을 확인하였다.