• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.267-267
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• 2012

$TiO_2$-Ni inverse catalysts were prepared using atomic layer deposition (ALD) process and catalytic $CO_2$ reforming of methane (CRM) reaction over catalysts (either bare Ni or $TiO_2$ coated-Ni particles) were performed using a continuous flow reactor at $800^{\circ}C$. $TiO_2$-Ni inverse catalyst showed higher catalytic reactivity at initial stage of CRM reactions at $800^{\circ}C$ comparing to bare Ni catalysts. Moreover, catalytic activity of $TiO_2$/Ni catalyst was kept high during 13 hrs of the CRM reactions at $800^{\circ}C$, whereas deactivation of bare Ni surface was started within 1hr under same conditions. The results of surface analysis using SEM, XPS, and Raman showed that deposition of graphitic carbon was effectively suppressed in a presence of $TiO_2$ nanoparticles on Ni surface, thereby improving catalytic reactivity and stability of $TiO_2$/Ni catalytic systems. We suggest that utilizing decoration effect of metal catalyst with oxide nanoaprticles is of great potential to develop metal-based catalysts with high stability and reactivity.

• Korean Journal of Materials Research
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• v.15 no.9
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• pp.594-597
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• 2005

The barrier characteristics of ZrN films deposited by remote plasma enhanced atomic layer deposition(PEALD) using TDEAZ and $N_2$ remote plasma have been investigated under various deposition conditions such as temperatures, plasma power and processing pressures. ZrN films showed generally improved properties as the processing temperature, pressure and plasma power increased. The optimized processing temperature, plasma power and pressure were $300^{\circ}C$, 200 Watt and 1 torr. respectively ZrN films deposited at the optimized processing conditions showed the carbon contents and resistivity of $6at.\%$ and $400{\mu}{\Omega}cm$ respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.135-136
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• 2012

Carbon atoms near the surface of W(110) induce reconstructions such as $R(15{\times}12)$ -C/W(110) which consists of two characteristic parts, one square shaped and bright protrusion and two smaller ones. In the atomic resolution STM image, the bigger protrusion shows the periodicities of clean W(110), indicating that it is almost carbon poor region. The smaller protrusion contains hexagonal carbide surface layer of ${\alpha}$-W2C on W(110). Employing this carburized W(110) as templates, we grow Co and Fe clusters of less than ten atoms. Due to the selectivity of bonding sites, growth of larger cluster is highly unfavorable for Co and the size of clusters is very uniform. Since Co atoms prefer to sit on the bigger protrusion rather than smaller one, Co cluster can be arranged one-dimensionally in $R(15{\times}12)$-C/W(110) with quite uniform size distribution. However, Fe clusters sit on both sites without favored site, but still with uniform size distribution. On the other hand, Fe clusters can be grown with quasi one-dimensional order in $R(15{\times}3)$-C/W(110), which consists of only smaller protrusions. We investigate the magnetic properties of the ordered nano-sized clusters. Experiments using XMCD reveals little magnetic moment of Co cluster on $R(15{\times}12)$-C/W(110). This observation is consistent with the predictions of our first principles calculations that small Co clusters can be nonmagnetic or antiferromagnetic with low mean magnetic moment per atom.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.398-398
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• 2007

Most recently, the Liquid Crystal (LC) aligning capabilities achieved by ion beam exposure on the diamond-like carbon (DLC) thin film layer have been successfully studied. The DLC thin films have a high mechanical hardness, a high electrical resistance, optical transparency and chemical inertness. Nitrogen doped Diamond Like Carbon (NDLC) thin films exhibit properties similar to those of the DLC films and better thermal stability than the DLC films because C:N bonding in the NDLC film is stronger against thermal stress than C:H bonding in the DLC thin films. Moreover, our research group has already studied ion beam alignment method using the NDLC thin films. The nematic liquid crystal (NLC) alignment effects treated on the SiNx thin film layers using ion beam irradiation for three kinds of N rations was successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD) and used three kinds of N rations. In order to characterize the films, the atomic force microscopy (AFM) image was observed. The good LC aligning capabilities treated on the SiNx thin film with ion beam exposure for all N rations can be achieved. The low pretilt angles for a NLC treated on the SiNx thin film with ion beam irradiation were measure.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.538-539
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• 2013

여러 장점으로 인해 OLED는 디스플레이 및 조명 등 적용분야가 넓어지고 있지만, 수분 및 산소에 취약하여 그 수명이 제한되는 단점이 있다. 이를 해결하고자 현재까지는 glass cap을 이용한 encapsulation 기술이 적용되고 있지만, flexible 기판에 적용하지 못하는 문제가 있다. 이러한 문제를 해결하고자 여러 가지 thin film encapsulation 기술이 적용되고 있으나 보다 신뢰성이 높은 기술의 개발이 절실한 때이다. Encapsulation 무기 박막 물질로서 $Si_3N_4$ 박막은 PE-CVD (Plasma Enhanced Chemical Vapor Deposition) 등의 박막 증착법을 사용한 많은 연구가 진행되어, 저온에서의 좋은 품질의 박막 증착이 가능하지만, 100도 이하의 thermal budget을 갖는 OLED Encapsulation에 사용하기에는 충분하지 않았다. CVD 박막의 특성을 더욱 개선하기 위해 최근 ALD (Atomic Layer Deposition) 방법을 통한 $Al_2O_3$ film 증착 방법이 연구되고 있지만, 낮은 증착 속도로 인해 양산에 걸림돌이 되고 있다. 본 연구에서는 또 다른 해결책으로서 Digital CVD 방법을 이용한 양질의 $Si_3N_4$ 박막의 증착을 연구하였다. 이것은 ALD 증착법과 유사하며, 1st step에서 PECVD 방법으로 4~5 ${\AA}$의 얇은 silicon 박막을 증착하고, 2nd step에서 nitrogen plasma를 이용하여 질화 반응을 진행하고, 이러한 cycle을 원하는 두께가 될 때까지 반복적으로 진행된다. 이 때 1 cycle 당 증착속도는 7 ${\AA}$/cycle 정도였다. 최적의 증착 방법과 조건으로 기존의 CVD $Si_3N_4$ 박막 대비 1/5 이하로 pinhole을 최소화 할 수는 있지만 완벽하게 제거하기는 힘든 문제가 있고, 이를 해결하기 위한 개선을 위한 접근 방법이 필요하다고 판단하였다. 본 연구에서는 무기물 박막인 carbon nitride를 이용한 SiN/C:N multilayer 증착 연구를 진행하였다. Fig. 1은 CVD 조건으로 증착된 두께 750 nm SiN film에서 여러 층의 C:N film layer를 삽입했을 때, 38 시간의 85%/$85^{\circ}C$ 가속실험에 따라 OLED의 발광 사진이다. 그림에서 볼 수 있듯이 C:N 층을 삽입하고 또한 그 박막의 수가 증가함에 따라서 OLED에 대한 encapsulation 특성이 크게 개선됨을 확인할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Corrosion Science and Technology
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• v.12 no.2
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• pp.65-78
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• 2013

The present investigation deals with the corrosion inhibition of mild steel in 1M $H_2SO_4$ with 1, 4-dihydro pyridine and its derivatives prepared using microwave activation method. The synthesis of inhibitor was confirmed by IR spectra. The effect of 1, 4-dihydropyridine derivatives on the corrosion inhibition of mild steel in 1M $H_2SO_4$ was studied using weight loss and electrochemical polarization techniques. Influence of temperature (303-333K) and synergistic effect of halide ions ($I^-$, $Br^-$ and $Cl^-$) on the inhibition behaviour was also studied. Corrosion products on the metal surface were analyzed by scanning electron microscopy (SEM) and a possible mechanism of inhibition by the compounds is suggested. Thermodynamic parameters were calculated using weight loss data in order to elaborate the mechanism of corrosion inhibition. Polarization measurements revealed that the studied compounds acted as mixed type inhibitor but slightly anodic in nature. Electrochemical impedance measurements revealed that the compounds were adsorbed onto the carbon steel surface and the adsorption obeyed the Langmuir adsorption isotherm. The synergistic effect of halide ions on the IE increases with increase in concentration. The IE obtained from atomic absorption spectrophotometric studies was found to be in good agreement with that obtained from the conventional weight loss method. SEM revealed the information of a smooth, dense protective layer in presence of the inhibitors.

• Composites Research
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• v.31 no.3
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• pp.83-87
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• 2018

An object in the Low Earth Orbit (LEO) is affected by many environmental conditions unlike earth's surface such as, Atomic oxygen (AO), Ultraviolet Radiation (UV), thermal cycling, High Vacuum and Micrometeoroids and Orbital Debris (MMOD) impacts. The effect of all these parameters have to be carefully considered when designing a space structure, as it could be very critical for a space mission. Polybenzimidazole (PBI) is a high performance thermoplastic polymer that could be a suitable material for space missions because of its excellent resistance to these environmental factors. A thin coating of PBI polymer on the carbon epoxy composite laminate (referred as CFRP) was found to improve the energy absorption capability of the laminate in event of a hypervelocity impact. However, the overall efficiency of the shield also depends on other factors like placement and orientation of the laminates, standoff distances and the number of shielding layers. This paper studies the effectiveness of using a PBI coating on the front bumper in a multi-shock shield design for enhanced hypervelocity impact resistance. A thin PBI coating of 43 micron was observed to improve the shielding efficiency of the CFRP laminate by 22.06% when exposed to LEO environment conditions in a simulation chamber. To study the effectiveness of PBI coating in a hypervelocity impact situation, experiments were conducted on the CFRP and the PBI coated CFRP laminates with projectile velocities between 2.2 to 3.2 km/s. It was observed that the mass loss of the CFRP laminates decreased 7% when coated by a thin layer of PBI. However, the study of mass loss and damage area on a witness plate showed CFRP case to have better shielding efficiency than PBI coated CFRP laminate case. Therefore, it is recommended that PBI coating on the front bumper is not so effective in improving the overall hypervelocity impact resistance of the space structure.

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.