• 한국전기전자재료학회논문지
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• 제23권6호
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• pp.487-490
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• 2010

This paper describes the elecrtical and optical characteristics of $N_2$ doped porous 3C-SiC films. Polycrystalline 3C-SiC thin films are anodized by $HF+C_2H_5OH$ solution with UV-LED exposure. The growth of in-situ doped 3C-SiC thin films on p-type Si (100) wafers is carried out by using APCVD (atmospheric pressure chemical vapor deposition) with a single-precursor of HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$. 0 ~ 40 sccm $N_2$ was used for doping. After the growth of doped 3C-SiC, porous 3C-SiC is formed by anodization with $7.1\;mA/cm^2$ current density for anodization time of 60 sec. The average pore diameter is about 30 nm, and etched area is increased with $N_2$ doping rate. These results are attributed to the decrease of crystallinity by $N_2$ doping. Mobility is dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC are 2.5 eV and 2.7 eV, respectively.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2000년도 창립총회 및 춘계학술발표회
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• pp.28-32
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• 2000

There are many different chemical pollutants that originate from atmospheric deposition and transportational activities along roads. This paper review the characteristics of heavy metal pollution, relationships between land use and pollutant load in urban area. Four land use areas in Seoul were selected for sampling and study with different characteristics during the period from April 1998 and February 2000. A series of studies have been carried out concerning the physicochemical characteristics of the sediments settling down in a gully pot to evaluate the contamination for heavy metals. The sediment samples from gully pots were characterized by the chemical extraction experiments. Sediments are characterized by very high concentrations of heavy metals, probably because of a long-term accumulation of vehicle- and industrial-related pollutants. The characteristics of heavy metal pollution show that each land use has different sources of contaminations. Mean Zn concentration in Yeouido and Junggu areas is 2-3 times higher than those in Dobonggu area. This suggests that Zn may be derived from the source of automobile traffic. The mean concentrations of Cu and Cr are very significantly high in Junggu and Gurogu areas and indicate that the industrial activities may contribute to the accumulation of Cu and Cr in sediments. The low Pb levels throughout the whole study areas in Seoul can be accounted for the use of unleaded gasoline since 1987.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.236-238
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• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

• 대한전자공학회논문지
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• 제22권2호
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• pp.90-96
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• 1985

PECVD장비를 사용하여 PSG를 증착하고 막의 유전 및 보호막 특성을 조사하였다. X-선 형광분석으로 PSG내의 인 농도를 분석한 결과 약 8m/o에서 포화되었다. 인 함량에 대한 PSC의 적외선 홉수율, 식각속도 및 시트저항등의 변화도 비교하였다. APCVD와 PECV각에 대한 유전특성, 스텝 커버리지, 크랙저항과 게터링효과를 검토하였다. PECVD산화막은 비중 2.4g/㎤, 굴절율 1.53, 항복전장 11-13MV/cm의 값을 가졌고 크랙저항도 APCVD산화막 보다 우수하였다 2m/o의 인을 포함하는 PECVD PSG의 경우 양호한 스텝 커버리지와 게터링효과를 보였다. 공정변수에 대한 일련의 실험을 통하여 PECVD PSC 공정으로 보다 개선된 특성의 보초막을 얻을 수 있었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.953-957
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• 2002

Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; ｛CH$_{3}$｝$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).

• 환경정책연구
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• 제3권1호
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• pp.95-117
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• 2004

This study was conducted to estimate nitrogen discharge from Korea (southern part of Korean peninsula) as NPS(non-point source) by mass balance approach; input and output analyses of nitrogen using existing data available. The material flow was sectored into three different activities; agricultural (raising crop and animals), human and natural activities in forest and urban areas. Atmospheric deposition, biological nitrogen fixation, inorganic fertilizers and manures applied, animal feed and imported foodstuffs such as crops, meat and fish were the inputs in this study, while ammonia volatilization, denitrification, human and animal waste generation, crop and meat production, and discharge into river to ocean were the outputs. The estimated total nitrogen input was $1,194.5{\times}10^3$ tons N/year and the river discharge was 408 to $422{\times}10^3$ tons N/year, of which 66 to 71% was from NPS. In detail, the estimated NPS discharges were respectively $8,274\;kg\;N/km^2$/year from agricultural area, $730\;kg\;N/km^2$/year from forest and $7,657\;kg\;N/km^2$/year from the other land areas such as urban and industrial area.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Journal of the korean society of oceanography
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• 제32권3호
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• pp.156-161
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• 1997

The biogeochemical cycle of silver has rarely been reviewed, even though the silver ion (Ag$^{\times}$) is extremly toxic to some organisms. Its concentration is still rising sharply because of increased anthropogenic activity, specifically the discharge from the film industry (mainly, silver thiosulfate: Ag (S$_2$O$_3$)${^3-}_2$). Recently, a number of researchers have quantified the major fluxes and reservoirs of silver in the open ocean, bays, and estuaries. A review of the available information for Ag cycling in the open ocean shows that the riverine input (from human activity and weathering processes: 7${\times}$10$^6$ kg/yr and 5${\times}$10$^6$ kg/yr, respectively) is the dominant source of Ag to estuarine and coastal regions. Most of the silver (90% of riverine input silver) is removed in coastal sediments by the physical-chemical character of silver due to its high partitioning with particulate matter. On the other hand, in the open ocean the atmospheric input (wet and dry deposition: 1.48${\times}$10$^6$ kg/yr and 1.94${\times}$ 10$^5$ kg/yr, respectively) becomes more important as a source of silver than riverine input. The residence time of silver calculated from available data is 1250 yrs in the deep ocean below 500 m, but only 3 yrs in the surface ocean.

• 한국재료학회지
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• 제27권3호
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• pp.155-160
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• 2017

Doped-$LaCrO_3$ perovskites, because of their good electrical conductivity and thermal stability in oxidizing and/or reducing environments, are used in high temperature solid oxide fuel cells as a gas-tight and electrically conductive interconnection layer. In this study, perovskite $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC) coatings manufactured by atmospheric plasma spraying followed by heat treatment at $1200^{\circ}C$ have been investigated in terms of microstructural defects, gas tightness and electrical conductivity. The plasma-sprayed LCCC coating formed an inhomogeneous layered structure after the successive deposition of fully-melted liquid droplets and/or partially-melted droplets. Micro-sized defects including unfilled pores, intersplat pores and micro-cracks in the plasma-sprayed LCCC coating were connected together and allowed substantial amounts gas to pass through the coating. Subsequent heat treatment at $1200^{\circ}C$ formed a homogeneous granule microstructure with a small number of isolated pores, providing a substantial improvement in the gas-tightness of the LCCC coating. The electrical conductivity of the LCCC coating was consequently enhanced due to the complete elimination of inter-splat pores and micro-cracks, and reached 53 S/cm at $900^{\circ}C$.