• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.127-130
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• 2003

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver, $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ muliti-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under different polarization state(intensity, phase polarization holography). The diffraction efficiency was obtained by first order intensity. The maximum diffraction efficiency of $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver was 0.8% and The maximum diffraction efficiency of $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer(multi-layer I, multi-layer II) were 1.4% and 3.1%.

• 한국전기전자재료학회논문지
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• 제25권3호
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• pp.213-217
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• 2012

In this study, we have investigated the holographic grating formation on Ag-doped amorphous As-Ge-Se-S thin films. The dependence of diffraction efficiency as afunction of Ag layer thickness has been investigated in this amorphous chalcogenide films. Holographic gratings was formed using [P:P] polarized Diode Pumped Solid State laser (DPSS, 532.0 nm). The diffraction efficiency was obtained by +1st order intensity. The results were shown that the diffraction efficiency of Ag/AsGeSeS double layer thin films for the Ag thickness, the maximum grating diffraction efficiency using 60 nm Ag layer is 0.96%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1042-1045
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on amorphous $MgF_2$/As-Ge-Se-S multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm). under different polarization combinations. The diffraction efficiency was obtained by +1st order intensity. The maximum diffraction efficiency of As-Ge-Se-S single layer and $MgF_2$/As-Ge-Se-S multi-layer were 0.8% and 1.4%

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.362-365
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• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.362-365
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• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer. Mutilayer structures farmed by alternating metal(Ag) a chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). Such multilayer structures have a greater sensitivity to illumination and larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.77-78
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• 2007

In this paper, we suppose that the 1-dimensional photonic crystal using holography lithography. We used Ag doped amorphous AsGeSeS which belongs in the chalcogenide materials have sensitive photoluminescence property. The purpose of this experiment is the process to complete 3-D photonic crystal after making 2-D photonic crystal. The lattice formation was made an observation by irradiating He-Ne laser with the AsGeSeS film leaned obliquely. Then, by measuring formed diffraction beam, the diffraction lattice was calculated.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.144-150
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• 2003

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.81-84
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• 2002

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.73-76
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• 1992

The amorphous phase of bulk and thin film in the As-Se-S-Ge system was observed by X-ray diffraction. Thermal analysis using DSC, DTA and TGA method has been used for the determination of the glass transition temperature, Tg. The glass transition temperature, Tg for the composition were $238^{\circ}C$ in $As_{40}Se_{15}S_{35}Ge_{10}$ and $231^{\circ}C$ in $AS_{40}Se_{25}S_{25}Ge_{10}$ and $As_{40}Se_{50}Ge_{10}$. The phase seperation of continuous phase and dispersive phase was observed by the optical texture of the polarizing microscope. Also, the glass transition temperature of the thin film was near $200^{\circ}C$. As the results of SEM-EDS analysis, the phase transition of the films by thermal treatment and light illumination was the amorphous to amorphous.