• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Proceedings of the Korean Geotechical Society Conference
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• 1999.10a
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• pp.271-278
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• 1999

Soil filters are commonly used to protect the soil structures from eroding and piping. When filters are clogged by fine particles which are progressively accumulated, these may lead to buildup of excessive pore pressures also leading to instability in subsurface infrastructure. A filter in the backfill of a retaining wall, a filter adjacent to the lining of a tunnel, or a filter in the bottom of an earth dam can be clogged by transported fine particles. This causes reduction in the permeability, which in turn may lead to intolerable decreases in their drainage capacity. In this thesis, the extent of this reduction is addressed using results from both experimental and theoretical investigations. In the experimental phase, the permeability reduction of a filter is monitored when an influent of constant concentration flows into the filter (uncoupled test), and when the water flow through the soil-filter system to simulate an in-situ condition (coupled test), respectively. The results of coupled and uncoupled test are compared with among others. In the theoretical phase of the investigation, a representative elemental volume of the soil filter was modeled as an ensemble of capillary tubes and the permeability reduction due to physical clogging was simulated using basic principles of flow in cylindrical tubes. In general, it was found that the permeability was reduced by at least one order of magnitude, and that the results from the uncoupled test and theoretical investigations were in good agreement. It is observed that the amount of deposited particles of the coupled test matches fairly well with that of the uncoupled test, which indicates that the prediction of permeability reduction is possible by preforming the uncoupled test instead of the coupled test, and/or by utilizing the theoretical model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of Hydrogen and New Energy
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• v.10 no.4
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• pp.211-217
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• 1999

In order to investigate the possibilities of microbatteries using TiNi type metal hydride, TiNi films were prepared by DC magnetron sputtering. The films were deposited under various Ar flow rates, DC powers and target-to-substrate distances to find the optimum sputtering conditions. The deposition rate of TiNi thin film increased by increasing the DC power and by decreasing the Ar flow rate and target-to-substrate distance. The chemical composition of the film changed as a target-to-substrate distance. The crystal structure of the film was amorphous state just after deposition and changed to crystalline by vacuum heat treatment.

• KSBB Journal
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• v.11 no.4
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• pp.420-430
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• 1996

One-step immuno-chromatography assay system for heat-killed Salmonella typhimurium antigens was developed. Three major components used were a glass fiber membrane (placed at the bottom of the system) with an antibody (specific to the analyse, detection antibody)-gold conjugate deposited in a dry state on the surface, a nitrocellulose membrane (middle) with an antibody (also, specific to the analyse but recognized different epitome: capture antibody) and anti-detection antibody immobilized in spatially separated areas, and a cellulose membrane (top) as absorption pad. These membranes were partially superimposed such that a wicking of aqueous solution containing sample can continuously take place through membranes. Variables that affected the system performance were the concentration of capture antibody, the location on the membrane, inert protein used for blocking of the membrane and for carrying the sample, and the concentration of the gold conjugate. Under optimal conditions, within 15 minutes after absorption of a sample solution from the bottom of the system antigen-antibody complexes of sandwich type were formed on the membrane surface area with immobilized capture antibody and a color signal was generated in proportion to the analyse concentration. The minimum do tection limit of the analyse was $1{\times}106$ Salmonella cells/mL.

• Journal of the Korean Electrochemical Society
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• v.5 no.3
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• pp.143-152
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• 2002

The growth of Polypyrrole film has been investigated during electropolymerization in an aqueous solution on bare and SAM modified gold electrodes by in-situ EQCM and ex-situ AFM. According to the result of cyclic voltammetry measurements, in the case of a bare gold electrode, the electrochemical deposition of polypyrrole were dependent on the limiting oxidative potential, but not on scan numbers. When the limiting potential higher than 0.8 V was applied on the electrode, the amount of polypyrrole deposited on a gold electrode was rapidly increased and the abnormal mass change attributed to the rearrangement of polypyrrole films was observed as the scan number increased. The polypyrrole film Prepared on electrodes modified with 1-dodecanethiol SAM or thiophene SAM grew 3-dimensionally with the rearrangement of film. However, in the case of BPUS SAM, 2-dimensional layer-by-layer growth of film was observed without the rearrangement of film. AFM images showed films with chain-shaped and/ or donut-shaped polymers when grown rapidly and a wrinkled film at the steady state condition.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1869-1872
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• 2003

As SLA(Sterealithography), SLS(Selective Laser Sintering), LOM(Laminated Object Manufacturing), FDM(Fused Deposition Modeling) etc. The FDM system the heart of a study and is developed by Stratasys co. ltd, in US., is small and cheap R.P. The material filament is heated until the material reaches a near-liquid state, it is pumped through a nozzle and become hand with a shape required, and this nozzle move pumping on the previously deposited material. Such FDM system that choice deposition type with X-Y plouter obtain in the thin continue layer by decreasing amount of extrusion or to central the injection amount when the head slow down at the corner, but in the process that fusion wax or resin become hand, deformation occur and it will affect the shape accuracy and the surface roughness. Such effect will depreciate quality and reliability of the product. Therefore, when the product made in actuality, the fundamental study on the basis geometry(surface, volume, line, angle) must be preceded and it have been research by many Free Form Fabrication. So, this basic object study purpose to obtain the fundamental geometry data and to enhance the surface roughness of the shape. And an operant can use the data for the progress of the surface roughness. This study research the estimation and application of the prototype surface roughness by adjustment the injection amount. And basie of this research, describe the pattern of prototype surface roughness and also used the result to estimate the surface of prototype.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.187-191
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• 2005

A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

• Analytical Science and Technology
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• v.5 no.3
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• pp.303-308
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• 1992

Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed $7{\times}7$ Si(111) have been obtained after in-situ heat cleaning in ultrahigh vacuum. Deposition of the films were monitored by a quartz cuystal oscillator and the Ti films were analyzed with in-situ AES and LEED. The in-situ measurements show that the initial reactions of Ti and Si occur at room temperature and form a disordered layer. At low temperatures($200^{\circ}C{\sim}300^{\circ}C$) intermixing of Ti and Si is detected by AES. Substrate $1{\times}1$ LEED patterns are displayed after $400^{\circ}C$ anneal. This indicates that the disordered layer has transformed to form an ordered surface. The reappearance of the $7{\times}7$ LEED pattern in observed with further high temperature anneals and indicates three dimensional titanium silicide island formation.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.4
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• pp.496-501
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• 1995

The N $O_{2}$ gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett (LB) films of Copper-tetra-tert-butylphthalocyanine (CuTBP), Dilithium phthalocyanine (Li$_{2}$Pc), N-docosylpyridinium TCNQ(C$_{22}$Py(TCNQ)), Polyamic acid alkylamine salts (PAAS). The optimum conditions for a film deposition were obtained through a study of .pi.-.ALPHA. isotherms and the deposited film status was confirmed by electrical and optical methods such as UV/visible absortion spectra, thickness measurements by ellipsometry, and electrical capacitances. A response of the LB films to the N $O_{2}$ gas was measured by a change of the electrical conductivities when the film is exposed to the gases. The CuTBP LB film shows the biggest change of the electrical conductivities when it is exposed to the N $O_{2}$ gases. And the order of gas-detection performance is the following;Li$_{2}$Pc, $C_{22}$Py(TCNQ), and PAAS LB films. Especially, the CuTBP and Li$_{2}$Pc LB films not only show the bigger change in the electircal conductivities when exposed to the gas, but return to the original state when the gas is desorbed.d.