• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.533-537
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• 2000

It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1727-1729
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• 2000

We has investigated the birefringence by the assisted electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Photoinduced birefringence has been studied in a chalcogenide material. We induced this thin films using linearly polarized He-Ne laser light(633nm) and detected polarized semiconductor laser light(780nm). To investigate the effect of electric field, various bias voltages applied. The result is shown that the birefringence has a higher value in +2V than others. We obtained the birefringence in the electric field effects by various voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.574-577
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• 1999

The chalcogenide glasses of thin films have superior property of the photoinduced anisotrophy(PA). In this study, we observed the phenomenon of Ag polarized photodoping using the irradiation with polarized He-Ne laser light, in the thin film of chalcogenide As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/ and the double-layer of Ag doped As/sub 40//Ge/sub 10//Se/sub 15//S/sub 35/. The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1252-1254
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• 1998

The characteristics of linear dichroism with temperature were investigated in normally($0^{\circ}$) and $80^{\circ}$-obliquely deposited amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin films using low temperature equipment. The saturated dichroism($D_{sat}$) of a $80^{\circ}$-obliquely deposited film shows approximately 6% which is the larger value than 4.2 % of normally($0^{\circ}$) deposited film. The $D_{sat}$ of $80^{\circ}$-deposited film was increased to 25 % at 77 K, which is four times larger than that at room temperature. The $D_{sat}$ decreased with increasing temperature and was completely disappeared at about 335K. This could be explained as the tunneling effect due to the thermal excitation of lone-pair electrons in intimate valence alternation pairs(IVAPs) which are considered to be the origin of anisotropy. The decrease of $D_{sat}$ with increasing temperature from 77K to room temperature satisfied Gaussian approximation with a standard deviation of 158K.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.389-396
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• 1994

The bilayer film of Ag/a-S $e_{75.G}$ $e_{25}$ and the monolayer film of a-S $e_{75.G}$ $e_{25}$ act as a negative-type and a positive-type resist in focused ion beam lithography, respectively. Using a model which takes into account the ion stopping power, the ion projected range, the ion concentration implanted into resists and the ion transmission coefficient, etc., the ion resist parameters are calculated for a broad range of ion energies and implanted doses. Ion sources of A $r^{+}$, S $i^{++}$ and G $a^{+}$ are used to expose resists. As the calculated results, the energy loss per unit distance by Ga'$^{+}$ ion is about 10$^{3}$[keV/.mu.M] and nearly constant for all energy range. Especially, the projected range and struggling for 80[keV] G $a^{+}$ ion energy are 0.0425[.mu.m] and 0.020[.mu.m], , respectively and the resist thickness of a-S $e_{75}$ G $e_{25}$ to minimize the ion penetration rate into a substrate is 0.118[.mu.m].u.m]..u.m].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.435-440
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• 2002

In this study, we have investigated photo-induced changes of optical energy gap( $E_{OP)}$ and photoluminescence (PL) in amorphous ($\alpha$-) S $e_{100-x}$G $e_{x}$ (x=5, 25 and 33) thin films prepared by conventional thermal evaporation method. In the $\alpha$-S $e_{100-x}$G $e_{x}$ thin film, the $E_{OP}$ is obtained by a linear extrapolation of the ($\alpha$hν)$^{\frac{1}{2}}$ versus hν plot to the energy axis using the optical absorption coefficient ($\alpha$) calculated from the extinction coefficient k measured in the wavelength range of 290~900nm. Although the values of $\Delta$ $E_{OP}$ are very different, all films exhibit photo-induced photo-darkening (PD) effect that is a red shift of $E_{OP}$ . In particular, $\Delta$ $E_{OP}$ in $\alpha$-S $e_{75}$ G $e_{25}$ thin film exhibits the largest value (i, e., $\Delta$ $E^{OP}$ ~40meV for $\alpha$-S $e_{95}$ G $e_{5}$ , $\Delta$ $E_{OP}$ ~200meV for $\alpha$-S $e_{75}$ G $e_{25}$ , $\Delta$ $E_{OP}$ ~130meV for $\alpha$-S $e_{67}$ G $e_{33}$ ). PL spectra in $\alpha$-SeGe by hν$_{HeCd}$ have no-Stokes shift (SS) and show a tendency dependent on both composition and illumination time. We explain the energy-induced phenomena such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..tc..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.5
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• pp.450-456
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• 2006

In this paper, we report the changes of morphology, transmittance and photoluminescence (PL) in hydrogenated amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, thermally deposited at the vapor incidence angles (${\theta}$) of $0^{\circ},\;45^{\circ}\;and\;80^{\circ}$. The hydrogenation was carried out under the condition of a $H_2$ pressure ($P_H$) of 20 atm and an annealing temperature range, $T_{Anneal}$ of $150^{\circ}C{\sim}210^{\circ}C$. A columnar structures with an inclination angle of approximately $65{\sim}70^{\circ}$ was formed in $80^{\circ}$-deposited films and then the columnar was broken after hydrogenation. Transmittance increases with an increase of deposition angle and by the hydrogenation. In particular, a broad PL band on the extended region is observed in obliquely deposited films and it increases during the hydrogenation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.191-194
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• 2000

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.87-90
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• 1999

The dependence of diffraction efficiency as a funct~on of film thickness and incident angle has been investigated in amorphous chalcogenide thin films, which act as a polarization holographic materials. Especially a-(Se, S) based films exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. Holographic gratings in amorphous As-Ge-Se-S thin films have been formed using the mutual perpendicular polarized(linearly) He-Ne laser light. We could obtain the optimum condition to get high diffraction efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.89-92
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• 1998

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. The polarization holographic grating has been formed in amorphous As-Ge-Se-S thin films using two linearly polarized He-Ne laser light. In addition, dffraction efficiency has been measured by the same laser of a relative lower intensity at the same time.