• 제목/요약/키워드: As₄O/sub 6/

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개선된 광촉매 효과를 위한 수열법에 의한 삼원계 Bi2WO6-GO-TiO2 나노복합체의 쉬운 합성 방법 (New Synthesis of the Ternary Type Bi2WO6-GO-TiO2 Nanocomposites by the Hydrothermal Method for the Improvement of the Photo-catalytic Effect)

  • 응웬 딩 궁 디엔;조광연;오원춘
    • 공업화학
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    • 제28권6호
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    • pp.705-713
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    • 2017
  • 독창적 물질인 $Bi_2WO_6-GO-TiO_2$ 나노복합체를 쉬운 수열법에 의해 성공적으로 합성하였다. 수열반응을 하는 동안, 그래핀 시트 위에 $Bi_2WO_6$$TiO_2$를 도포하였다. 합성한 $Bi_2WO_6-GO-TiO_2$ 복합체형 광촉매는 X-선 회절법(XRD), 주사전자현미경(SEM), 에너지 분산 X-선(EDX) 분석, 투과전자현미경(TEM), 라만분광법, UV-Vis 확산반사 분광법(UV-vis-DRS), 및 X-선 광전자분광기(XPS)에 의하여 특성화하였다. $Bi_2WO_6$ 나노입자는 불규칙한 dark-square block 나노 플페이트 형상을 보였으며, 이산화티탄 나노입자는 퀜텀 도트 사이즈로 그래핀 시트 위 표면을 덮고 있었다. 로다민 비의 분해는 농도감소의 측정과 함께 UV 분광법에 의하여 관찰하였다. 합성된 물질의 광촉매 반응은 Langmuir-Hinshelwood 모델과 띠 이론으로 설명하였다.

H2O2로 유발된 C6 신경교세포 사멸에 대한 총명공진단의 보호 효과 (Protective Effects of Chongmyunggongjin-dan on H2O2-induced C6 Glial Cell Death)

  • 황규상;신용진
    • 대한한방내과학회지
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    • 제41권1호
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    • pp.44-58
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    • 2020
  • Objectives: This study was conducted to identify the protective effects of Chongmyunggongjin-dan (CMGJD) on Hydrogen peroxide (H2O2)-induced apoptosis mechanisms in C6 glial cells. Method: We used CMGJD after distilled water extraction, filtration, and lyophilization. The ROS scavenging effect was examined by fluorescence microscopy. Expression levels of proteins related to ROS generation were investigated by western blotting. Functional changes in organelles related to Reactive oxygen species (ROS) generation were investigated by immunoblotting and by verifying expression level of relevant enzymes. Results: The CMGJD extract protected the cells against H2O2-induced morphological changes and DNA fragmentation, inhibited the increase of Heme_oxygenase-1(HO-1) and the decrease in catalase, protected against the loss of mitochondrial membrane potential, inhibited disturbances of lysosomal function, and induced an increase in peroxisomes. Conclusion: CMGJD was confirmed to have a protective effect on H2O2-induced C6 glial cell death possibly by blocking the pathways causing damage to subcellular organelles, such as mitochondria, lysosomes, and peroxisomes. We assume that CMGJD will be effective for the prevention and treatment of ischemic stroke in a clinical environment.

Y2O3-stabilized ZrO2, Ni, and graphene-added Mg by reactive mechanical grinding processing for hydrogen storage and comparison with Ni and Fe2O3 or MnO-added Mg

  • Song, Myoung Youp;Choi, Eunho;Kwak, Young Jun
    • Journal of Ceramic Processing Research
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    • 제20권6호
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    • pp.609-616
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    • 2019
  • The optimum powder to ball ratio was examined, which is one of the important conditions in reactive mechanical grinding processing. Yttria (Y2O3)-stabilized zirconia (ZrO2) (YSZ), Ni, and graphene were chosen as additives to enhance the hydriding and dehydriding rates of Mg. Samples with a composition of 92.5 wt% Mg + 2.5 wt% YSZ + 2.5 wt% Ni + 2.5 wt% graphene (designated as Mg-2.5YSZ-2.5Ni-2.5graphene) were prepared by grinding in hydrogen atmosphere. Mg-2.5YSZ-2.5Ni-2.5graphene had a high effective hydrogen-storage capacity of almost 7 wt% (6.85 wt%) at 623 K in 12 bar H2 at the second cycle (n = 2). Mg-2.5YSZ-2.5Ni-2.5graphene contained Mg2Ni phase after hydriding-dehydriding cycling. Mg-2.5YSZ-2.5Ni-2.5graphene had a larger quantity of hydrogen absorbed for 60 min, Ha (60 min), than Mg-2.5Ni-2.5graphene and Mg-2.5graphene. The addition of YSZ also increased the initial dehydriding rate and the quantity of hydrogen released for 60 min, Hd (60 min), compared with those of Mg-2.5Ni-2.5graphene. Y2O3-stabilized ZrO2, Ni, and graphene-added Mg had a higher initial hydriding rate and a larger Ha (60 min) than Fe2O3, MnO, or Ni and Fe2O3-added Mg at n = 1.

Protective role of paeoniflorin from hydrogen peroxide-mediated oxidative damage in C6 glial cells

  • Lee, Ah Young;Nam, Mi Na;Kim, Hyun Young;Cho, Eun Ju
    • Journal of Applied Biological Chemistry
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    • 제63권2호
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    • pp.137-145
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    • 2020
  • Oxidative stress is one of the pathogenic mechanisms of various neurodegenerative diseases, such as Alzheimer's disease. Neuroglia, the most abundant cells in the brain, is thought to play an important role in the antioxidant defense system and neuronal metabolic support against neurotoxicity and oxidative stress. We investigated the protective effect of paeoniflorin (PF) against oxidative stress in C6 glial cells. Exposure of C6 glial cells to hydrogen peroxide (H2O2, 500 μM) significantly decreased cell viability and increased amounts of lactate dehydrogenase (LDH) release, indicating H2O2-induced cellular damage. However, treatment with PF significantly attenuated H2O2-induced cell death as shown by increased cell survival and decreased LDH release. The H2O2-stimulated reactive oxygen species production was also suppressed, and it may be associated with improvement of superoxide dismutase activity by treatment with PF. In addition, an increase in ratio of Bcl-2/Bax protein expression was observed after treatment with PF. In particular, the down-stream of the apoptotic signaling pathway was inhibited in the presence of PF, mostly by reduction of cleaved-poly ADP ribose polymerase, cleaved caspase-3, and -9 protein expression. Furthermore, H2O2-induced phosphorylation of c-Jun N-terminal kinase and extracellular signal-regulated kinase 1/2 was attenuated by treatment with PF. Taken together, neuroprotective effect of PF against oxidative stress probably result from the regulation of apoptotic pathway in C6 glial cells. In conclusion, our findings suggest that PF may be a potent therapeutic agent for neurodegenerative disorders.

Nd2-xSrxNiO4+δ/GDC(x = 0, 0.4, 0.6) 공기극의 전기화학특성 평가 (Electrochemical Performance of a Nd2-xSrxNiO4+δ/GDC(x = 0, 0.4, 0.6) as a SOFC Cathode Material)

  • 이경진;서정욱;임예솔;황해진
    • 한국세라믹학회지
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    • 제51권1호
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    • pp.51-56
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    • 2014
  • Mixed ionic and electronic conducting $K_2NiF_4$-type oxide, $Nd_{2-x}Sr_xNiO_{4+\delta}$ (x = 0, 0.4, 0.6) powders were synthesized by a solid-state reaction technique and solid oxide fuel cells consisting of a $Nd_{2-x}Sr_xNiO_{4+\delta}-GDC$ cathode, a Ni-YSZ anode and 8YSZ as an electrolyte were fabricated. The effect of strontium substitution for neodymium on the electrical and electrochemical properties was examined. The electrical conductivity increased with an increase in the Sr doping content, while it appears that the excess oxygen (${\delta}$) decreased. Sr doping into $Nd_2NiO_{4+\delta}$ resulted in an increase in the cathode polarization resistance and an decrease in the power density of the cell. These phenomena may be associated with the decreased amount of excess oxygen noted in the $Nd_{2-x}Sr_xNiO_{4+\delta}$ cathode.

Sol-Gel 방법으로 제작된 SnO2 seed layer를 적용한 고반응성 ZnO 가스 센서 (High-sensitivity ZnO gas Sensor with a Sol-gel-processed SnO2 Seed Layer)

  • 김상우;박소영;한태희;이세형;한예지;이문석
    • 센서학회지
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    • 제29권6호
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    • pp.420-426
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    • 2020
  • A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO2 nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO2 seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO2 seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

Taguchi 실험 계획법에 의한 CH3SH 반도체 악취 가스 센서의 개발 (Development of a Semiconductor Odor Gas Sensor for the Measurement of CH3SH with Taguchi Experimental Design)

  • 김선태;최일환
    • 한국대기환경학회지
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    • 제20권6호
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    • pp.783-792
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    • 2004
  • In this study, a thick-film semiconductor odor gas sensor for the detection of $CH_3$SH was developed using SnO$_2$ as the main substrate and was investigated in terms of its sensitivity and reaction time. In the process of manufacturing the sensor, Taguchi's design of experiment (DOE) was applied to analyze the effects of a variety of parameters, including the substrate, the additives and the fabrication conditions, systematically and effectively. Eight trials of experiments could be possible using the 27 orthogonal array for the seven factors and two levels of condition, which originally demands 128 trials of experiments without DOE. The additives of Sb$_2$O$_{5}$ and PdCl$_2$ with the H$_2$PtCl$_{6}$ ㆍ6$H_2O$ catalyst were appeared to be important factors to improve the sensitivity, and CuO, TiO$_2$, V$_2$O$_{5}$ and PdO were less important. In addition, TiO$_2$, V$_2$O$_{5}$ and PdO would improve the reaction time of a sensor, and CuO, Sb$_2$O$_{5}$, PdCl$_2$ and H$_2$PtCl$_{6}$ㆍ6$H_2O$ were negligible. Being evaluated simultaneously in terms of both sensitivity and reaction time, the sensor showed the higher performance with the addition of TiO$_2$ and PdO, but the opposite results with the addition of CuO, V$_2$O$_{5}$, Sb$_2$O$_{5}$ and PdCl$_2$. The amount of additives were superior in the case of 1% than 4%. H$_2$PtCl$_{6}$ㆍ6$H_2O$ would play an important role for the increase of sensor performance as a catalyst.nce as a catalyst.

Li[Ni0.2Li0.2Mn0.6]O2 양극물질의 Ag 도핑(Doping) 효과 (Ag Doping Effect on Li[Ni0.2Li0.2Mn0.6]O2 Cathode Material)

  • 유제혁;김석범;박용준
    • 한국전기전자재료학회논문지
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    • 제21권3호
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    • pp.249-254
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    • 2008
  • Ag doping effect on $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ cathode material was studied. Specially, we focused on rate performance of Ag doped samples. The $Li[Ni_{0.2}Li_{0.2}Mn_{0.6}]O_2$ powder was prepared by simple combustion method and the Ag was doped using $AgNO_3$ during gelation process. Based on X-ray diffraction analysis, there was no structural change by Ag doping, but the 'metallic' form of Ag was included in the doped powder. Both bare and Ag 1 wt.% doped sample showed similar discharge capacity of 242 mAh/g at 0.2C rate. However, as the increase of charge-discharge rate to 3C, Ag 1 wt.% doped sample showed higher discharge capacity (172 mAh/g) and better cyclic performance than those of bare sample. The discharge capacity of Ag 5 wt.% doped sample was relatively low at all rate condition. However it displayed better rate performance than other samples.

Ar/CF4 유도결합 플라즈마에서 식각된 (Ba0.6Sr0.4)TiO3 박막의 손상 감소 (Study on Damage Reduction of (Ba0.6Sr0.4)TiO3 Thin Films in Ar/CF4 Plasma)

  • 강필승;김경태;김동표;김창일
    • 한국전기전자재료학회논문지
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    • 제16권6호
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    • pp.460-464
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    • 2003
  • The barium strontium titannate ((Ba,Sr)TiO$_3$:BST) thin films were etched in an inductively coupled plasma (ICP) as a function of CF$_4$/Ar gas mixing ratio. Under CF$_4$(20%)/Ar(80%), the maximum etch rate of the BST films was 400 $\AA$/min. Etching products were redeposited on the surface of BST and then the nature of crystallinity were varied. Therefore, we investigated the etched surface of BST by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The plasma damages were evaluated in terms of leakage current density by Agilent 4145C and dielectric constant by HP 4192 impedance analyzer. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. After annealing at 600 $^{\circ}C$ for 10 min in $O_2$ ambient, the leakage current density, roughness and nonvolatile etch byproducts reduced. From this results, the plasma induced damages were recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

Effect of SiC and WC additon on Oxidation Behavior of Spark-Plasma-Sintered ZrB2

  • Kim, Chang-Yeoul;Choi, Jae-Seok;Choi, Sung-Churl
    • 한국분말재료학회지
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    • 제26권6호
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    • pp.455-462
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    • 2019
  • ZrB2 ceramic and ZrB2 ceramic composites with the addition of SiC, WC, and SiC/WC are successfully synthesized by a spark plasma sintering method. During high-temperature oxidation, SiC additive form a SiO2 amorphous outer scale layer and SiC-deplete ZrO2 scale layer, which decrease the oxidation rate. WC addition forms WO3 during the oxidation process to result in a ZrO2/WO3 liquid sintering layer, which is known to improve the anti-oxidation effect. The addition of SiC and WC to ZrB2 reduces the oxygen effective diffusivity by one-fifth of that of ZrB2. The addition of both SiC and WC shows the formation of a SiO2 outer dense glass layer and ZrO2/WO3 layer so that the anti-oxidation effect is improved three times as much as that of ZrB2. Therefore, SiC- and WC-added ZrB2 has a lower two-order oxygen effective diffusivity than ZrB2; it improves the anti-oxidation performance 3 times as much as that of ZrB2.