• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2044-2046
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• 2000

A system to monitor the ion mass and charge-state as well as plasma potential value during plasma source ion implantation (PSII) has been developed. It was tested with 30-kV PI3D setup using alternatively hot cathode do (HC) and inductively coupled RF (ICP) discharge sources. The design and performance of the system will be described, and experimental results in nitrogen and argon plasmas produced by modular HC-ICP source will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.145-148
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• 2001

A large area plasma source using parallel 2x2 ICP antennas showed improved etching uniformity by the E-ICP operation. ITO etching process with CH$_4$ gas chemistry is optimized with the DOE(Design of Experiment) based on Taguchi method. Various methane ratios in methane and argon mixture are compared to confirm the effect of polymerization. The analysis shows that the effect of bias power is the largeset. We obtained higher ITO etching rate and better uniformity on 350x300mm substrate at the 50Hz magnetization frequency of the E-ICP operation technique.

• Journal of the Korean Chemical Society
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• v.29 no.4
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• pp.382-389
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• 1985

The effect of plasma operational parameters for the determination of rare earth elements(REE) by means of inductively coupled plasma(ICP) spectrometry was investigated. While the increase in the flow rate of carrier gas argon enhanced the sensitivity and lowered the detection limit, significant ionization interferences were observed. The decrease in RF power increased the signal to background ratio. The observation point showing the lowest ionization interference was slightly higher than the position where the spatial profile of the analyte reached the maximum. The detection limits of the spectral lines commonly used for the determination of REE were measured and the spectral lines relatively free from spectral interferences were chosen.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.618-622
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• 2010

Cost-effective purification methods of silicon were carried out in order to replace the conventional Siemens method for solar grade silicon. Firstly, acid leaching which is a hydrometallurgical process was preceded with grinded silicon powders of metallurgical grade (~99% purity) to remove metallic impurities. Then, plasma treatments were performed with the leached silicon powders of 99.94% purity by argon plasma at 30 kW power under atmospheric pressure. Plasma treatment was specifically efficient for removing Zr, Y, and P but not for Al and B. Another purification step by EB treatment was also studied for the 99.92% silicon lump which resulted in the fast removal of boron and aluminum. That means the two methods are effective alternative tools for removing the doping elements like boron and phosphor.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.57-60
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• 2008

Purpose: The radial speed of plasma current sheath was measured at the plasma focus apparatus. Methods: The measurement was used to time-resolved spectroscopic method and Rogowski coils. Results: Radial current sheath speed was measured with $10^5$ cm/s at Helium and Argon pressure between 5 to 100 torr and discharging voltage of 15 kV. When the gas pressure was increased, the current sheath speeds were decreased. Conclusions: At the optimum condition of plasma focus apparatus, the radial speed is guessed $10^7$ cm/s as a results of the measurement of current sheath speed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1066-1068
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• 1999

Magnetic field is commonly used in low temperature processing plasmas in order to obtain high density. E $\times$ B magnetron or surface multipole configuration were most popular. However, the properties of capacitively coupled rf plasma confined by axially applied static magnetic fields have rarely been studied. In this paper, the effects of magnetic field on the characteristics of 13.56MHz/40KHz argon plasma will be reported. Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and omissive probe. At low pressure region ($\sim$10mTorr), ion current was increased by a factor of 3 - 4 due to reduction of diffusion loss of charged particles to the wall. It was observed that magnetic field induces large time variation of the plasma potential. The experimental result was compared with particle-in-cell simulation. It was also observed that electron temperature tend to decrease with increasing magnetic induction level for 40KHz discharge.

• Journal of Environmental Science International
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• v.22 no.7
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• pp.915-923
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• 2013

Decomposition of non-biodegradable contaminants such as phenol contained in water was investigated using a dielectric barrier discharge (DBD) plasma reactor in the aqueous solutions with continuous oxygen bubbling. Effects of various parameters on the removal of phenol in aqueous solution with high-voltage streamer discharge plasma are studied. In order to choose plasma gas, gas of three types (argon, air, oxygen) were investigated. After the selection of gas, effects of 1st voltage (80 ~ 220 V), oxygen flow rate (2 ~ 7 L/min), pH (3 ~ 11), and initial phenol concentration (12.5 ~ 100.0 mg/L) on phenol degradation and change of $UV_{254}$ absorbance were investigated. Absorbance of $UV_{254}$ can be used as an indirect indicator of phenol degradation and the generation and disappearance of the non-biodegradable organic compounds. Removal of phenol and COD were found to follow pseudo first-order kinetics. The removal rate constants for phenol and COD of phenol were $5.204{\times}10^{-1}min^{-1}$ and $3.26{\times}10^{-2}min^{-1}$, respectively.

• Journal of Welding and Joining
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• v.25 no.4
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• pp.42-48
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• 2007

An inert gas atomized NiTiZrSiSn bulk metallic glass feedstock was sprayed onto the copper plate using vacuum plasma spraying process. In order to change the in-flight particle energy, that is, thermal energy, the hydrogen gas flow rate in plasma gas mixture was increased at the constant flow rate of argon gas. Coating and single pass spraying bead were produced with the least feeding rate. Regardless of the plasma gas composition, fully melted through unmelted particle could be observed on the overlay coating. However, the frequency of the unmelted particle number density was increased with the decrease of the hydrogen gas flow rate. The amorphous phase fraction within coating was also affected by the number density of the unmelted particle.