• Journal of Welding and Joining
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• 제11권2호
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• pp.62-73
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• 1993

Weld pool oscillation for the full-penetration GTA welding process was investigated for its possible application to weld penetration control through theoretical modeling and experiment. Energy method was used to estimate the natural frequency of the molten pool having the physically-acceptable weld geometry and oscillation modes. An unique experimental system was built which had the data acquisiton and video capabilities so that the pool oscillation signals and molten pool surfaces could be monitored continuously. Pool oscillation was detected through arc voltage and arc light emission simultaneously. The signal from arc light emission showed good coherence with that from arc voltage, and arc light generated the higher quality signal. The molten pool was found to oscillate in different oscillation modes based on the travel speed and weld geometry. The natural frequency estimated from the theoretical model agreed reasonably well with the experimental results.

• 천문학회지
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• 제37권2호
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• pp.87-90
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• 2004

Spectrophotometry of the night sky over Mount Bohyun is presented for the nearly entire visible wavelengths of $3600{\~}$8600{\AA}$. The data was obtained under moonless clear sky in February 2004 with the 1.8-m telescope and the long slit spectrograph. The sky spectrum shows a number of strong emission lines originated from light pollution, especially due to high pressure sodium lamps. When compared to the night sky of Kitt Peak, our sky continuum is 1 to 2 magnitude brighter at all wavelengths, the worst being around the broad emission region near 6000${\AA}$. The night sky spectrum presented here with almost complete line identifications is a useful reference for arc-independent wavelength calibrations to check the gravity flexure of the spectrograph and the wavelength shift between FeNeArHe arc frames and science frames.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.476-480
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• 2003

In this paper, we have performed 3-dimensional time-resolving measurement of the Ne light emitted from the cell of plasma display panel(PDP) as a function of the pressure using the scanned point detecting system. From the temporal behavior results, we could analyze the discharge behavior of panel with Ne-Xe(4%) mixing gas and 300 torr, 400 torr and 500 torr pressure. At the top view of panel, the discharge of 300 torr panel starts at the 634 ns and ends at the 722 ns. The emission duration time is about 90 ns. The discharge of 400 torr panel starts at the 682 ns and ends at the 786 ns. the emission duration time is about 100 ns. Also, the discharge of 500 torr panel starts at the 770 ns and ends at the 826 ns. the emission duration time is about 56 ns. The discharge moves from inner edge of cathode electrode to outer cathode electrode forming arc type. In the side view of 300 torr, 400 torr and 500 torr an emission shows that the light is detected up to 180${\mu}{\textrm}{m}$, 150${\mu}{\textrm}{m}$ and 70${\mu}{\textrm}{m}$ height of barrier rib and the emission distribution of the 300 torr is wider than 400 torr, 500 torr.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.213-213
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• 2011

DC arc plasmatron is powerful plasma source to apply etching and texturing processing. Even though DC arc plasmatron has many advantages, it is difficult to apply an industry due to the small applied area. To increase an effective processing area, we suggest a DC-RF hybrid plasma system. The DC-RF hybrid plasma system was designed and made. This system consists of a DC arc plasmatron, RF parts, reaction chamber, power feeder, gas control system and vacuum system. To investigate a DC-RF hybrid plasma, we used a Langmuir probe, OES (Optical emission spectroscopy), infrared (IR) light camera. For RF matching, PSIM software was used to simulate a current of an impedance coil. The results of Langmuir probe measurements, we obtain a homogeneous plasma density and electron temperature those are about $1{\times}1010$ #/cm3 and 1~4 eV. The DC-RF hybrid plasma source is applied for plasma etching experimental, and we obtain an etching rate of 10 ${\mu}m$/min. through a 90 mm of reaction chamber diameter.

• 한국연소학회지
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• 제22권1호
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• pp.23-31
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• 2017

Large-scale fuel tanks emit massive amount of hardly-combustible VOC mixtures which are light hydrocarbon species in dilution with nitrogen and carbon dioxide. We have developed a lab-scale burner to combust those VOC mixtures by use of a turbulent partially-premixed flame as a pilot flame. For a higher HC treatment ratio, the mixture gases were reformed by a rotating arc plasma device. The results showed that the nitrogen mole fraction and the injecting speed of the VOC mixture influence on the performance of the burner. It was also found that the size of the pilot flame and the power supplied to the plasma device determine the overall HC treatment ratio and the concentrations of CO and NOx in the exhaust gas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1628-1630
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• 2002

In this paper, we measured 3-dimensional temporal behavior of the light emitted from discharge cell of plasma display panel(PDP) as a function of the pressure using the scanned point detecting system. The detected light signal through the PM tube is sent on the oscilloscope and oscilloscope which is connected to PC with GPIB. The whole system is controlled by a PC. From the temporal behavior results, we could analyze the discharge behavior of panel with Ne-Xe(4%) mixing gas and 300torr, 400torr, 500torr pressure. The top view of panel shows that the discharge moves from inner edge of cathode electrode to outer cathode electrode forming arc type. At the 300torr, initial emission time is very fast. The side view of panel shows that the light is detected up to $150{\mu}m$ height of barrier rib. In the panel of 300torr, emission distribution is wider than the others.

• 조명전기설비학회논문지
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• 제20권8호
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• pp.48-53
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• 2006

제철소에서 사용되고 있는 전기로는 전력계통에 전압 변동을 일으키며 시간에 따라 변하는 비선형 부하이다. 플리커는 전압 변동의 크기에 따라 램프의 방출 변화에 의한 인간의 지각 효과로 정의된다. 플리커 레벨은 전압 변동의 크기, 주파수 및 기간에 의해 결정된다. 본 논문에서는 전기로 부하로 인한 154[kV] 시스템에서의 전압 변동 문제를 측정하고, 플리커 저감을 위한 SVC 적용 결과를 분석하고, IEC 61000-3-7에 의하여 플리커를 평가하였다.

• 조명전기설비학회논문지
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• 제21권10호
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• pp.150-158
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• 2007

규모가 큰 제철소는 전기로를 포함한 시간에 따라 변하는 비선형 부하를 가지고 있다. 이들 비선형 부하는 고조파 전류를 발생시키고, 전력계통의 전압을 왜곡시킨다. 플리커는 전압 변동의 크기에 따라 램프의 방출 변화에 의한 인간의 지각 효과로 정의된다. SVC의 주 목적은 공통결합점에서 전압을 한계값 이하로 유지하는데 있다. 본 논문에서는 SVC 투입 전후의 고조파와 플리커 저감 효과를 분석하고, IEC 61000-3-6과 IEC 61000-3-7에 의해 평가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.147-147
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• 2011

High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

• 한국진공학회지
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• 제15권6호
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• pp.581-586
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• 2006

차세대 리소그래피 기술인 극자외선(EUV : Extreme Ultraviolet) 빛샘 연구의 기초단계로써, 동축타입의 전극구조가 설치된 다이오드 챔버를 통해 Ar 플라스마를 생성하였으며, 방출 분광기술(emission spectroscopy)를 이용하여 방출된 가시광선 영역의 빛을 조사하였다. 장치의 입력 전압을 0.5kV씩 변화를 주어 $2\sim3.5kV$까지 인가를 했으며 이극챔버의 최적 압력인 330mTorr 일 때 각 전압에 따른 방출 분광선 데이터를 얻었다. 이때 Ar I과 Ar II 방출선을 관측하였으며 국소적인 열적평형 (LTE ; Local Thermodynamic Equilibrium) 상태의 가정 하에 볼츠만 도표(Boltzmann plot)와 사하(Saha) 방정식을 이용해 Ar I 및 Ar II의 전자온도와 이온 밀도를 각각 계산하였다. 각 입력전압에 대해 이온밀도는 Ar I과 Ar II에서 각각 $\sim10^{15}/cc$ 및 $\sim10^{13}/cc$의 값으로 계산되었다.