• The Korean Journal of Physiology and Pharmacology
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• 제1권2호
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• pp.161-167
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• 1997

This study compares the subtypes of central beta adrenergic receptors (ARs) of brains of untreated rats with those of imipramine-treated rats. Beta adrenergic receptors were measured by quantitative autoradiography of the binding of $^3H$-dihydroalprenolol ($^3H$-DHA) in coronal sections of rat brain. Repeated treatment of rats with imipramine significantly reduced the binding of $^3H$-DHA to beta-1 AR in many brain areas, especially throughout the cerebral cortex, hippocampus, thalamus, and amygdala. Significant reductions of the binding of $^3H$-DHA to beta-2 AR were not found in any area of the brain. These data suggests that a selective down-regulation of beta-1 AR may be involved in the adaptive changes occurring after prolonged imipramine treatment.

• 열처리공학회지
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• 제25권6호
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.260-264
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• 2012

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of IZO thin films intended for use as anode contacts in the organic light emitting diodes (OLED) devices. These IZO thin films were deposited on the PES film by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at room temperature. In order to investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon has been changed from 0.1 sccm to 0.5 sccm, respectively. All the IZO thin film has an (222) preferential orientation regardless of ambient gases. The electrical resistivity of the IZO film increased with increasing O2 flow rate, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly similar regardless of the H2 flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made with the configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al in order to elucidate the performance of the IZO substrate. The current density and the luminance of OLED devices with IZO thin films deposited in 0.5 sccm H2 ambient gas are the highest amongst all other films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1540-1541
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• 2011

We calculated the electron transport coefficients in $H_2$+Ar gas calculated E/N values 0.01 ~ 1 Td by the Boltzmann equation method. This study gained the values of the electron swarm parameters such as the electron drift velocity and the transverse diffusion coefficients for $H_2$+Ar gas at a range of E/N. The transport coefficient W and Dt/u have been calculated in mixtures of 0.5% and 4% hydrogen in argon. All values were made at 293 K.

• 한국발생생물학회지:발생과생식
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• 제4권2호
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• pp.203-213
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• 2000

본 연구에서는 반응성 산소족이 수정능력획득, 칩체반응에 미치는 영향을 알아보고자 반응성 산소족으로 superoxide anion은 xanthine (X) -xanthine oxidase (XO) system을, hydroperoxide는 $H_2O$$_2$를 농도별로 처 리하였으며, nitric oxide (NO)는 NO donor인 sodium nitroprusside (SNP)를 처리하였다 또한 남성불임요인의 하나로 알려진 leukocytospermia에 대한 영향을 알아보기 위해 lymphocyte를 농도별로 처리하였고, 일반적인 배양기내 산소농도인 20% $O_2$농도를 생체내 농도와 유사한 5% $O_2$ 농도로 낮추었을 때 의 결과를 알아보고자 하였다. 수정능력 획득 정도와 첨체반응률을 알아보기 위해 chlortetracycline (CTC) 염색방법을 이용하였다. 지질과산화 정도는 정자내 malondialdehyde (MDA)의 생성량을 흡광기를 이용하여 정량하였다. $H_2O$$_2$, X-XO, SNP와 lymphocyte 처리군은 1시간 배양시에 수정능력획득률이 유의하게 증가하였으나, 저산소처리군에서는 차이가 없었다. 저 농도의 $H_2O$$_2$를 처리한 경우에는 지질과산화 정도가 감소하였으나, 고 농도에서는 대조군에 비해 유의하게 증가하였다. 고 농도의 Iymphocyte를 처리한 경우에는 1시간 처리시에 지질과산화가 유의하게 증가하였으나, 처리된 산소농도에 따른 지질과산화의 차이는 없었다. 첨체반응률의 경우, 처리한 모든 반응성 산소족에서 대조군에 비해 높은 첨체반응률을 확인하였다. X(100 $\mu$M)-XO(100mIU)의 경우가 가장 높은 첨체반응률을 나타내었다. 이러한 결과들은 반응성 산소족이 수정능력획득, 지질과산화 그리고 첨체반응에 영향을 미치는 것을 확인하여 주었다. 또한 반응성 산소족이 생성된 경우에 수정능력획득이 보다 빠르게 진행되어지는 것은 반응성 산소족이 정자의 과운동성과 수정능력획득의 중요한 조절자임을 시사한다고 사료된다.

• Bulletin of the Korean Chemical Society
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• 제25권1호
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• pp.73-78
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• 2004

A highly sensitive detecting method has been developed for determining part per billion of sulfur in $H_2S$/Ar plasma. The method is based on the excitation of Ar/$H_2S\;or\;Ar/H_2S/O_2$ mixture in hollow cathode glow discharge sustained by radiofrequency (RF) or 60 Hz AC power and the spectroscopic measurement of the intensity of emission lines from electronically excited $S_2^*\;or\;SO_2^*$ species, respectively. The RF or AC power needed for the excitation did not exceed 30 W at a gas pressure maintained at several mbar. The emission intensity from the $SO_2^*$ species showed excellent linear response to the sulfur concentration ranging from 5 ppbv, which correspond to S/N = 5, to 500 ppbv. But the intensity from the $S_2^*$ species showed a linear response to the $H_2S$ only at low flow rate under 20 sccm (mL/min) of the sample gas. Separate experiments using $SO_2$ gas as the source of sulfur demonstrated that the presence of $O_2$ in the argon plasma is essential for obtaining prominent $SO_2^*$ emission lines.

• 응용통계연구
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• 제25권2호
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• pp.251-259
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• 2012

본 논문은 일별 관광수요 자료를 분석하기 위하여 시계열의 대표적인 3개 모형인 ARIMA, Holt-Winters, AR-GARCH 모형을 적용하였다. 모형의 성능을 비교하기 위해 Armstrong (2001)이 제안한 방법을 이용하여 서로 다른 방법의 예측값을 단순결합과 MSE, SE를 이용한 결합법을 이용하여 정확도 높일 수 있음을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.54.2-54.2
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• 2007

• 한국진공학회지
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• 제19권3호
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• pp.177-183
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• 2010

우리는 MOCVD (metal organic chemical vapor deposition)법을 이용하여 DEZ (Diethylzinc)을 운송하는 Ar 유속과 reactant (반응물질)의 종류에 따른 ZnO 박막 증착을 연구하였다. Bubbler 시스템을 통하여 주입되는 Ar 유속에 의해 Zn 소스인 DEZ의 양이 조절된다. 산소 기체와 수증기는 산화를 위해 반응물질로 사용된다. 본 연구로부터 표면의 거칠기(surface roughness)는 반응물질의 종류와 DEZ Ar 유속에 관계되며 박막의 두께에 의존한다는 것을 알 수 있었다. 그러나 기판 온도는 산소를 반응물로 하는 상태에서는 표면 거칠기에 영향을 주지 못함을 알 수 있었다. 우리는 ZnO 박막이 90 sccm (Standard Cubic Centimeter per Minute)의 DEZ Ar 유속, 8 Pa의 수증기압, 그리고 $140^{\circ}C$의 기판 온도에서 39.16 mm의 가장 높은 거칠기를 가진다는 것을 확인할 수 있었다. 본 논문은 태양전지의 광 흡수층으로 사용가능한 ZnO 박막을 연구하였다.