• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• Electronics and Telecommunications Trends
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• v.32 no.2
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• pp.54-61
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• 2017

증강현실(AR: Augmented Reality)은 실제공간에 가상정보를 실시간으로 증강하여 사용자가 증강된 가상정보와 상호작용함으로써 작업 효율성을 향상시키는 기술이다. 현실공간을 직접 다양한 형태의 미디어로 활용하는 증강현실은 가상세계 구성을 위한 3차원 모델링의 부담을 줄인 반면, 사용자 이동과 주변 환경 변화에 대응하여 실시간 정보나 콘텐츠를 제공해야 하는 기술적 어려움이 있다.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.29-33
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• 2012

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited under hydrogen atmosphere on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under hydrogen ambient gases (Ar, $Ar+H^2$) at room temperature. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $H^2$ under $Ar+H^2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show good current density-voltage-luminance characteristics. This suggests that flat surface roughness and low electrical resistivity of a-IZO anode film lead to more efficient anode material in OLED devices.

• Analytical Science and Technology
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• v.15 no.6
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• pp.540-549
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• 2002

The arrangement of encapsulated Ar atoms in the molecular-dimensioned cavities of fully dehydrated zeolite A of unit-cell composition $Cs_3Na_8HSi_{12}Al_{12}O_{48}$ ($Cs_3$-A) has been studied crystallographically to probe the confinement effect of guest species in microporous environment. Atoms of Ar were encapsulated in the cavities of $Cs_3$-A by treatment with 410 atm of Ar at $400^{\circ}C$ for two days, followed by cooling at room temperature. The crystal structure of $Cs_3Na_8H$-A(4Ar) ($P_e$ = 410 atm, $a=12.245(2){\AA}$, $R_1=0.0543$, and $R_2=0.0552$) has been determined by single crystal X-ray diffraction technique in the cubic space group $Pm\bar{3}m$ at 21 (1) $^{\circ}C$ and 1 atm. Encapsulated Ar atoms are distributed in three crystallographic distinct positions: 1.5 Ar atoms per unit cell opposite 6-rings, 1.5 opposite four-rings in the large cavity, and finally 1.0 in the sodalite-unit. The possible structures of argon clusters, such as $Ar_2$, $Ar_3$, and $Ar_4$, are proposed.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.1990-1994
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• 2013

A novel multi-cationic borane, tri-N-methylpyridinium substituted triarylborane, $[BAr^N_3]I_3$ ($[2]I_3$) ($Ar^N=4-(4-C_5H_4N-Me)-2,6-Me_2-C_6H_2$) was prepared from the corresponding neutral tris-pyridyl borane, $BAr_3$ (2a) ($Ar=4-(4-C_5H_4N)-2,6-Me_2-C_6H_2$). The crystal structure of 2a determined by X-ray diffraction study reveals the presence of tri-coordinate boron center with peripheral pyridyl moieties. The fluoride ion affinity of the cationic borane, $[2]I_3$ was investigated by UV-vis absorption titrations and was compared with that of neutral 2a. While 2a binds fluoride with the binding constant of $1.9{\times}10^2\;M^{-1}$ in $THF/H_2O$ (9:1 v/v) mixture, $[2]I_3$ shows a very high binding constant ($K=1.0{\times}10^8\;M^{-1}$) that is greater by six orders of magnitude than that of 2a in the same medium. This result indicates that the fluorophilicity of triarylborane can be drastically enhanced by multiple pyridinium substitutions.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.524-531
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• 1996

차세대 소자고립구조로서 연구되고 있는 trench isolation 공정 등에는 실리콘 식각이 요구되며 실리콘 식각 공정중에는 반응성 이온에 의해 격자결함이 발생할 수 있다. 이와같이 생성된 결함은 소자의 전기적 성질을 열화시키므로 열처리를 통하여 제거하여야만 한다. 따라서 본 연구에서는 Ar,Ar/H2 플라즈마로 격자결함을 인위적으로 발생시켜 20$0^{\circ}C$-110$0^{\circ}C$ 질소분위기에서 30분간 열처리에 따른 생성된 격자결함의 소거거동을 관찰하였다. 실리콘 표면에 Schottky 다이오드를 제작하여 I-V, C-V 특성을 측정하므로써 잔류하는 전기적인 손상의 정도를 평가하였다. Ar으로 식각한 경우에는 110$0^{\circ}C$ 30분간 열처리한 결과 모든 격자결함이 제거되나 Ar/H2로 식각한 경우에는 격자결함이 완전히 제거되지 않고 (111)적층결함이 남아있었다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.96-100
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• 1990

The cordierite ($2MgO,2Al_{2}O_{3},5SiO_{2}$) is of great interest for packaging substrates of multilayer IC. The Cu layer was fabricated on the cordierite substrate by the screen printing method and the adhesion properties of the interfaces at the different cosintering conditions were studied. When cosinted in the $Ar+H_{2}O$atmosphere good adhesion was obtained and the heating was found out to be an important factor for the adhesion.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.7-11
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• 2008

ITO (Indium Tin Oxide) thin films have been extensively studied for OLED devices because they have high transparent properties in the visible wavelength and a low electrical resistivity. These ITO films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$ and Ar+$H_2$) at $300^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon has been changed from 0.5sccm to 5sccm and from 0.01sccm to 0.25sccm respectively. The resistivity of ITO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while it is nearly constant under Ar+$H_2$. And the peak of ITO films obtained (222) and (400) orientations and the average transmittance was over 80% in the visible range. The OLED device fabricated with different ITO substrates made by configuration of ITO/$\alpha$-NPD/Alq3/LiF/Al to elucidate the performance of ITO substrate for OLED device.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.3
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• pp.355-362
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• 2020

The corrosion behavior of the Inconel X-750 alloy was investigated for its potential application under a Cl₂-O₂ mixed gas flow in an Ar atmosphere. The corrosion rate was found to be negligible at temperatures up to 400℃ under a flow rate of 30 mL·min^-1 Cl₂ + 170 mL·min^-1 Ar, whereas an exponential increase was observed in the corrosion rate at temperatures greater than 500℃. The suppression of the corrosion reaction due to the presence of O₂ was verified experimentally at flow rates of 30 mL·min^-1 Cl₂ (4.96 g·m^-2·h^-1), 20 mL·min^-1 Cl₂ + 10 mL·min^-1 O₂ (2.02 g·m^-2 ·h^-1), and 10 mL·min^-1 Cl₂ + 20 mL·min^-1 O₂ (1.34 g·m^-2·h^-1) under a constant Ar flow rate of 170 mL·min^-1 at 600℃ for 8 h. The surface morphology analysis results revealed that porous surfaces with tunnel-type holes were produced under the Cl₂-O₂ mixed-gas condition. Furthermore, the effects of the Cl₂ flow rate on the corrosion rate were investigated, indicating that its impact was negligible within the range of 5-30 mL·min^-1 Cl₂ at 600℃.